ON Semiconductor MPS5179 Technical data
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MPS5179
Preferred Device
High Frequency Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
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MAXIMUM RATINGS
Rating Symbol Value Unit
Collector− Emitter Voltage V
Collector− Base Voltage V
Emitter− Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CEO
CBO
EBO
C
P
P
stg
D
D
12 Vdc
20 Vdc
2.5 Vdc
50 mAdc
200
1.14
300
1.71
−55 to +150 °C
W
mW/°C
W
mW/°C
COLLECTOR
3
2
BASE
1
EMITTER
MARKING
DIAGRAM
TO−92
1
2
3
(Note: Microdot may be in either location)
CASE 29−11
STYLE 1
MPS5179 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AYWW G
MPS
5179
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
MPS5179 TO−92 5000 Units/Box
MPS5179G TO−92
MPS5179RLRA TO−92 2000/Tape & Reel
MPS5179RLRAG TO−92
MPS5179RLRP TO−92 2000/Tape & Ammo
MPS5179RLRPG TO−92
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
(Pb−Free)
(Pb−Free)
(Pb−Free)
5000 Units/Box
2000/Tape & Reel
2000/Tape & Ammo
†
MPS5179/D
MPS5179
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector− Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0)
Collector− Base Breakdown Voltage
(IC = 0.001 mAdc, IE = 0)
Emitter− Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
Collector− Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base− Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)
Small Signal Current Gain
(IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz)
1. fT is defined as the frequency at which |hfe| extrapolates to unity.
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(sat)
f
C
h
FE
12 − Vdc
20 − Vdc
2.5 − Vdc
mAdc
−
−
0.02
1.0
25 250 −
− 0.4 Vdc
− 1.0 Vdc
T
cb
fe
900 2000 MHz
− 1.0 pF
25 300 −
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