ON Semiconductor MMT05B350T3, MMT05B350T3G Product Review

© Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev. 2

1 Publication Order Number:

MMT05B350T3/D

MMT05B350T3

Preferred Devices

Product Preview

Thyristor Surge Protectors

High Voltage Bidirectional TSPD

These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.

Secondary protection applications for electronic telecom equipment
at customer premises.

Features

• High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled

Temperature Environments

• The MMT05B350T3 is used to help equipment meet various

regulatory requirements including: Bellcore 1089, ITU K.20 and
K.21, IEC 950, UL 1459 and 1950 and FCC Part 68

• Bidirectional Protection in a Single Device

• Little Change of Voltage Limit with Transient Amplitude or Rate

• Freedom from Wearout Mechanisms Present in Non−Semiconductor

Devices

• Fail−Safe, Shorts When Overstressed, Preventing Continued

Unprotected Operation

• Surface Mount Technology (SMT)

• Indicates UL Recognized − File #E210057

• Pb−Free Package is Available

MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Off−State Voltage − Maximum V

DM

300 V

Maximum Pulse Surge Short Circuit Current
Non−Repetitive Double Exponential Decay
Waveform (−25°C Initial Temperature)
(Notes 1 and 2)

2 x 10 msec
8 x 20 msec
10 x 160 msec
10 x 360 msec
10 x 560 msec
10 x 700 msec
10 x 1000 msec

I

PPS1

I

PPS2

I

PPS3

I

PPS4

I

PPS5

I

PPS6

I

PPS7

±150
±150
±100
±100

±70
±70
±50

A(pk)

Non−Repetitive Peak On−State Current
60 Hz Full Sign Wave

I

TSM

32 A(pk)

Maximum Non−Repetitive Rate of Change of
On−State Current Exponential Waveform, < 100 A

di/dt "300

A/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Allow cooling before testing second polarity.

2. Measured under pulse conditions to reduce heating.

This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.

BIDIRECTIONAL TSPD

50 AMP SURGE, 350 VOLTS

Device Package Shipping

†

ORDERING INFORMATION

MMT05B350T3 SMB 12 mm Tape & Ree

l

(2.5 K/Reel)

MT1 MT2

SMB

(No Polarity)

(Essentially JEDEC DO−214AA)

CASE 403C

(

)

MARKING DIAGRAMS

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

MMT05B350T3G SMB

(Pb−Free)

12 mm Tape & Ree

l

(2.5 K/Reel)

A = Assembly Location
Y = Year
WW = Work Week
RPBM = Specific Device Code
G = Pb−Free Package

(Note: Microdot may be in either location)

AYWW

RPBM G

G

MMT05B350T3

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Operating Temperature Range Blocking or Conducting State T

J1

−40 to +125 °C

Overload Junction Temperature − Maximum Conducting State Only T

J2

+175 °C

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

L

260 °C

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.

Characteristics

Symbol Min Typ Max Unit

Breakover Voltage (Both polarities)

(dv/dt = 100 V/ms, I

SC

= 1.0 A, Vdc = 1000 V)

(+65°C)

V

(BO)

−

−

−

−

400
412

V

Breakover Voltage (Both polarities)

(f = 60 Hz, I

SC

= 1.0 A(rms), VOC = 1000 V(rms),

R

I

= 1.0 kW, t = 0.5 cycle) (Note 3)

(+65°C)

V

(BO)

−

−

−

−

400

412

V

Breakover Voltage Temperature Coefficient dV

(BO)

/dT

J

− 0.12 − V/°C

Breakdown Voltage (I

(BR)

= 1.0 mA) Both polarities V

(BR)

− 350 − V

Off State Current (VD1 = 50 V) Both polarities

Off State Current (V

D2

= VDM) Both polarities

I

D1

I

D2

−

−

−

−

2.0

5.0

mA

On−State Voltage (IT = 1.0 A)

(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)

V

T

− 1.6 3.0 V

Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW)

Both polarities

I

BO

− 475 − mA

Holding Current (Both polarities) (Note 3)

V

S

= 500 V; IT (Initiating Current) = "1.0 A (+65°C)

I

H

150
130

270

−

−

−

mA

Critical Rate of Rise of Off−State Voltage

(Linear waveform, V

D

= Rated VBR, TJ = 25°C)

dv/dt 2000 − −

V/ms

Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)

Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)

C

O

−

−

14
27

18
30

pF

3. Measured under pulse conditions to reduce heating.

+ Current

+ Voltage

V

TM

V

(BO)

I

(BO)

I

D2

I

D1

V

D1

VD2V

(BR)

I

H

Symbol Parameter

ID1, I

D2

Off State Leakage Current

V

D1

, V

D2

Off State Blocking Voltage

V

BR

Breakdown Voltage

V

BO

Breakover Voltage

I

BO

Breakover Current

I

H

Holding Current

V

TM

On State Voltage

Voltage Current Characteristic of TSPD

(Bidirectional Device)