ON Semiconductor MMSZ4xxxET1G, SZMMSZ4xxxET1G User Manual

MMSZ4xxxET1G Series,
SZMMSZ4xxxET1G Series

Zener Voltage Regulators

500 mW SOD−123 Surface Mount

Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.

Features

 500 mW Rating on FR−4 or FR−5 Board
 Wide Zener Reverse Voltage Range − 1.8 V to 43 V
 Package Designed for Optimal Automated Board Assembly
 Small Package Size for High Density Applications
 ESD Rating of Class 3 (> 16 kV) per Human Body Model
 Peak Power − 225 W (8 x 20 ms)
 AEC−Q101 Qualified and PPAP Capable
 SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

 Pb−Free Packages are Available*

Mechanical Characteristics:
CASE:

Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds

POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0

MAXIMUM RATINGS

Rating Symbol Max Unit

Peak Power Dissipation @ 20 ms (Note 1)

@ T

 25C

L

Total Power Dissipation on FR−5 Board,

(Note 2) @ T
Derated above 75C

Thermal Resistance, (Note 3)

Junction−to−Ambient

Thermal Resistance, (Note 3)

Junction−to−Lead

Junction and Storage Temperature Range TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Nonrepetitive current pulse per Figure 11.

2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.

3. Thermal Resistance measurement obtained via infrared Scan Method.

= 75C

L

P

pk

P

R

q

R

q

D

JA

JL

stg

225 W

500

6.7mWmW/C

C/W

340

C/W

150

−55 to
+150

C

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SOD−123

CASE 425

STYLE 1

1

Cathode

2

Anode

MARKING DIAGRAM

1

xxx = Device Code (Refer to page 2)
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

xxx M G

G

ORDERING INFORMATION

Device Package Shipping

MMSZ4xxxET1G SOD−123

SZMMSZ4xxxET1G SOD−123

MMSZ4xxxET3G SOD−123

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

(Pb−Free)

(Pb−Free)

(Pb−Free)

Tape & Reel

Tape & Reel

10,000 /

Tape & Reel

†

3,000 /

3,000 /

DEVICE MARKING INFORMATION

See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2012

January, 2012 − Rev. 6

1 Publication Order Number:

MMSZ4678ET1/D

MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series

ELECTRICAL CHARACTERISTICS (T

otherwise noted, V

Symbol

V

Z

I

ZT

I

R

V

R

I

F

V

F

= 0.95 V Max. @ IF = 10 mA)

F

Parameter

Reverse Zener Voltage @ I

Reverse Current

Reverse Leakage Current @ V

Reverse Voltage

Forward Current

Forward Voltage @ I

F

= 25C unless

A

ZT

R

I

I

F

VRV

Z

I

V

R

F

I

ZT

V

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (T

Device

Device*

MMSZ4680ET1G CF8 2.09 2.2 2.31 50 4 1

MMSZ4684ET1G CG3 3.13 3.3 3.47 50 7.5 1.5

MMSZ4688ET1G CG7 4.47 4.7 4.94 50 10 3

MMSZ4689ET1G CG8 4.85 5.1 5.36 50 10 3

MMSZ4690ET1G CG9 5.32 5.6 5.88 50 10 4

MMSZ4691ET1G CH1 5.89 6.2 6.51 50 10 5

MMSZ4692ET1G CH2 6.46 6.8 7.14 50 10 5.1

MMSZ4693ET1G CH3 7.13 7.5 7.88 50 10 5.7

MMSZ4697ET1G CH7 9.50 10 10.50 50 1 7.6

MMSZ4699ET1G CH9 11.40 12 12.60 50 0.05 9.1

MMSZ4701ET1G CJ2 13.3 14 14.7 50 0.05 10.6

MMSZ4702ET1G CJ3 14.25 15 15.75 50 0.05 11.4

MMSZ4703ET1G CJ4 15.20 16 16.80 50 0.05 12.1

MMSZ4705ET1G CJ6 17.10 18 18.90 50 0.05 13.6

MMSZ4709ET1G CK1 22.80 24 25.20 50 0.01 18.2

MMSZ4711ET1G CK3 25.65 27 28.35 50 0.01 20.4

MMSZ4717ET1G CK9 40.85 43 45.15 50 0.01 32.6

1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
*Include SZ-prefix devices where applicable.

Marking

= 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

A

Zener Voltage (Note 1) Leakage Current

VZ (V) @ I

Min Nom Max

mA mA

ZT

IR @ V

R

V

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2