Datasheet MMSZ4678T1 Datasheet (ON Semiconductor)

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MMSZ4678T1 Series

Preferred Device

Zener Voltage Regulators

500 mW SOD−123 Surface Mount

Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.

Features

• 500 mW Rating on FR−4 or FR−5 Board

• Wide Zener Reverse Voltage Range − 1.8 V to 43 V

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Pb−Free Packages are Available

Mechanical Characteristics:
CASE:

Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0

MAXIMUM RATINGS

Rating Symbol Max Unit

Total Power Dissipation on FR−5 Board,

(Note 1) @ TL = 75°C
Derated above 75°C

Thermal Resistance, (Note 2)

Junction−to−Ambient

Thermal Resistance, (Note 2)

Junction−to−Lead

Junction and Storage Temperature Range TJ, T

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint.

2. Thermal Resistance measurement obtained via infrared Scan Method.

P

D

R

q

JA

R

q

JL

stg

500

6.7mWmW/°C

340 °C/W

150 °C/W

−55 to
+150

°C

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1

Cathode

2

1

2

Anode

SOD−123

CASE 425

STYLE 1

MARKING DIAGRAM

1

xx = Device Code (Refer to page 3)
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

xx M G

G

ORDERING INFORMATION

Device Package Shipping

MMSZ4xxxT1 SOD−123 3000/Tape & Reel
MMSZ4xxxT1G SOD−123

(Pb−Free)

MMSZ4xxxT3 SOD−123 10000/Tape & Ree
MMSZ4xxxT3G SOD−123

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000/Tape & Reel

10000/Tape & Ree

†

© Semiconductor Components Industries, LLC, 2005

August, 2005 − Rev. 7

DEVICE MARKING INFORMATION

See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 o f this
data sheet.

Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

1 Publication Order Number:

MMSZ4678T1/D

MMSZ4678T1 Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless

A

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)

Symbol Parameter

V

Reverse Zener Voltage @ I

Z

I

V

V

Reverse Current

ZT

I

Reverse Leakage Current @ V

R

Reverse Voltage

R

I

Forward Current

F

Forward Voltage @ I

F

ZT

R

F

I

I

F

VRV

Z

I

V

R

F

I

ZT

Zener Voltage Regulator

V

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2

MMSZ4678T1 Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

A

Zener Voltage (Note 3) Leakage Current

Device*

Device

Marking

VZ (Volts) @ I

Min Nom Max

ZT

mA mA

IR @ V

R

MMSZ4678T1, G CC 1.71 1.8 1.89 50 7.5 1
MMSZ4679T1, G CD 1.90 2.0 2.10 50 5 1

MMSZ4680T1, G CE 2.09 2.2 2.31 50 4 1

MMSZ4681T1, G CF 2.28 2.4 2.52 50 2 1
MMSZ4682T1, G CH 2.565 2.7 2.835 50 1 1
MMSZ4683T1, G CJ 2.85 3.0 3.15 50 0.8 1
MMSZ4684T1, G CK 3.13 3.3 3.47 50 7.5 1.5

MMSZ4685T1, G CM 3.42 3.6 3.78 50 7.5 2

MMSZ4686T1, G CN 3.70 3.9 4.10 50 5 2
MMSZ4687T1, G CP 4.09 4.3 4.52 50 4 2
MMSZ4688T1, G CT 4.47 4.7 4.94 50 10 3
MMSZ4689T1, G CU 4.85 5.1 5.36 50 10 3

MMSZ4690T1, G CV 5.32 5.6 5.88 50 10 4

MMSZ4691T1, G CA 5.89 6.2 6.51 50 10 5
MMSZ4692T1, G CX 6.46 6.8 7.14 50 10 5.1
MMSZ4693T1, G CY 7.13 7.5 7.88 50 10 5.7
MMSZ4694T1, G CZ 7.79 8.2 8.61 50 1 6.2
MMSZ4695T1, G DC 8.27 8.7 9.14 50 1 6.6
MMSZ4696T1, G DD 8.65 9.1 9.56 50 1 6.9
MMSZ4697T1, G DE 9.50 10 10.50 50 1 7.6
MMSZ4698T1, G DF 10.45 11 11.55 50 0.05 8.4
MMSZ4699T1, G DH 11.40 12 12.60 50 0.05 9.1
MMSZ4700T1, G DJ 12.35 13 13.65 50 0.05 9.8
MMSZ4701T1, G DK 13.30 14 14.70 50 0.05 10.6
MMSZ4702T1, G DM 14.25 15 15.75 50 0.05 11.4
MMSZ4703T1, G

†

DN 15.20 16 16.80 50 0.05 12.1
MMSZ4704T1, G DP 16.15 17 17.85 50 0.05 12.9
MMSZ4705T1, G DT 17.10 18 18.90 50 0.05 13.6
MMSZ4706T1, G DU 18.05 19 19.95 50 0.05 14.4
MMSZ4707T1, G DV 19.00 20 21.00 50 0.01 15.2
MMSZ4708T1, G DA 20.90 22 23.10 50 0.01 16.7
MMSZ4709T1, G DX 22.80 24 25.20 50 0.01 18.2
MMSZ4710T1, G DY 23.75 25 26.25 50 0.01 19.0
MMSZ4711T1, G

†

EA 25.65 27 28.35 50 0.01 20.4
MMSZ4712T1 EC 26.60 28 29.40 50 0.01 21.2
MMSZ4713T1, G ED 28.50 30 31.50 50 0.01 22.8
MMSZ4714T1, G EE 31.35 33 34.65 50 0.01 25.0
MMSZ4715T1, G EF 34.20 36 37.80 50 0.01 27.3
MMSZ4716T1, G EH 37.05 39 40.95 50 0.01 29.6
MMSZ4717T1, G EJ 40.85 43 45.15 50 0.01 32.6

3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C.
*The “G’’ suffix indicates Pb−Free package available.
†MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel

Volts

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3

MMSZ4678T1 Series

TYPICAL CHARACTERISTICS

8

7

6

TYPICAL TC VALUES

100

TYPICAL TC VALUES

5

4

3

2

VZ @ I

ZT

10

VZ @ I

ZT

1

0

−1

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ

−2

−3
98765432

10

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients

(Temperature Range −55°C to +150°C)

1.2

1.0

0.8

PD versus T

L

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ

1211

1

10 100

, NOMINAL ZENER VOLTAGE (V)

V

Z

Figure 2. Temperature Coefficients

(Temperature Range −55°C to +150°C)

1000

RECTANGULAR
WAVEFORM, TA = 25°C

100

0.6

0.4

0.2

, POWER DISSIPATION (WATTS)

D

P

1000

, DYNAMIC IMPEDANCE ( )Ω

ZT

Z

100

0

10

1

PD versus T

A

T, TEMPERATURE (5C)

Figure 3. Steady State Power Derating

TJ = 25°C
I

= 0.1 I

IZ = 1 mA

5 mA

20 mA

VZ, NOMINAL ZENER VOLTAGE

Z(AC)

f = 1 kHz

101

Z(DC)

1501251007550250

100

10

, PEAK SURGE POWER (WATTS)

pk

P

1

0.1

1 10 100 1000

PW, PULSE WIDTH (ms)

Figure 4. Maximum Nonrepetitive Surge Power

1000

75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)

100

10

, FORWARD CURRENT (mA)

F

I

150°C

1

0.4

75°C 25°C 0°C

VF, FORWARD VOLTAGE (V)

1.21.11.00.90.80.70.60.5

Figure 5. Effect of Zener Voltage on

Zener Impedance

Figure 6. Typical Forward Voltage

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4

MMSZ4678T1 Series

TYPICAL CHARACTERISTICS

Z

1000

C, CAPACITANCE (pF)

100

100

1000

0 V BIAS
1 V BIAS

BIAS AT
50% OF VZ NOM

10

1

VZ, NOMINAL ZENER VOLTAGE (V)

101

TA = 25°C

Figure 7. Typical Capacitance

TA = 25°C

10

100

100

0.1

, LEAKAGE CURRENT ( A)μ

0.01

R

I

0.001

0.0001

0.00001

100

10

1

+150°C

+25 °C

−55 °C

90

80706050403020100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 8. Typical Leakage Current

TA = 25°C

10

1

, ZENER CURRENT (mA)

Z

0.1

I

0.01

VZ, ZENER VOLTAGE (V)

Figure 9. Zener Voltage versus Zener Current

(V

Up to 12 V)

1

, ZENER CURRENT (mA)

Z

0.1

I

0.01

1086420

12

10 30 50 70 90

VZ, ZENER VOLTAGE (V)

Figure 10. Zener Voltage versus Zener Current

(12 V to 91 V)

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5

MMSZ4678T1 Series

PACKAGE DIMENSIONS

SOD−123

CASE 425−04

ISSUE E

D

A

A1

1

H

E

2

b

E

L

C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

MILLIMETERS INCHES

DIM MIN NOM MAX

A 0.94 1.17 1.35 0.037

A1 0.00 0.05 0.10 0.000

b 0.51 0.61 0.71 0.020

−−−

3.56

2. ANODE

−−−

1.60

3.68 0.140

−−− −−−

c

E 2.54 2.69 2.84 0.100
H

E

L 0.25

STYLE 1:

PIN 1. CATHODE

MIN NOM MAX

0.15

0.055D 1.40 1.80

3.86

0.010

0.046

0.002

0.024

−−− −−−

0.063

0.106

0.145

−−− −−−

0.053

0.004

0.028

0.006

0.071

0.112

0.152

SOLDERING FOOTPRINT*

0.91

0.036

1.22

0.048

2.36

0.093

4.19

0.165

mm

ǒ

SCALE 10:1

inches

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6