ON Semiconductor MMSZ4678ET1 Technical data

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MMSZ4678ET1 Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style.
Features
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 ms)
Pb−Free Packages are Available
Mechanical Characteristics:
Void-free, transfer-molded, thermosetting plastic case
CASE: FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL 25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ TL = 75°C Derated above 75°C
Thermal Resistance, (Note 3)
Junction−to−Ambient
Thermal Resistance, (Note 3)
Junction−to−Lead
Junction and Storage Temperature Range TJ, T
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
P
pk
P
R
q
R
q
D
JA
JL
stg
225 W
500
6.7mWmW/°C
340 °C/W
150 °C/W
−55 to +150
°C
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1
Cathode
2
1
2
Anode
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
1
xxx = Device Code (Refer to page 2) M = Date Code G = Pb−Free Package
(Note: Microdot may be in either location)
xxx M G
G
ORDERING INFORMATION
Device Package Shipping
MMSZ4xxxET1 SOD−123 3000/Tape & Reel MMSZ4xxxET1G SOD−123
(Pb−Free)
MMSZ4xxxET3 SOD−123 10000/Tape & Ree MMSZ4xxxET3G SOD−123
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
3000/Tape & Reel
10000/Tape & Ree
DEVICE MARKING INFORMATION
See specific marking information in the device marking column of the Electrical Characteristics table on page 2 o this data sheet.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
1 Publication Order Number:
MMSZ4678ET1/D
MMSZ4678ET1 Series
ELECTRICAL CHARACTERISTICS (T
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
V
Reverse Zener Voltage @ I
Z
I
V
V
Reverse Current
ZT
I
Reverse Leakage Current @ V
R
Reverse Voltage
R
I
Forward Current
F
Forward Voltage @ I
F
F
= 25°C unless
A
ZT
R
I
I
F
VRV
Z
I
V
R
F
I
ZT
V
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (T
Device
Device*
MMSZ4684ET1 CG3 3.13 3.3 3.47 50 7.5 1.5 MMSZ4688ET1, G CG7 4.47 4.7 4.94 50 10 3 MMSZ4689ET1, G CG8 4.85 5.1 5.36 50 10 3
MMSZ4690ET1 CG9 5.32 5.6 5.88 50 10 4
MMSZ4691ET1 CH1 5.89 6.2 6.51 50 10 5 MMSZ4692ET1 CH2 6.46 6.8 7.14 50 10 5.1 MMSZ4693ET1 CH3 7.13 7.5 7.88 50 10 5.7 MMSZ4697ET1 CH7 9.50 10 10.50 50 1 7.6 MMSZ4699ET1 CH9 11.40 12 12.60 50 0.05 9.1 MMSZ4701ET1, G CJ2 13.3 14 14.7 50 0.05 10.6 MMSZ4702ET1, G CJ3 14.25 15 15.75 50 0.05 11.4 MMSZ4703ET1 CJ4 15.20 16 16.80 50 0.05 12.1 MMSZ4705ET1 CJ6 17.10 18 18.90 50 0.05 13.6 MMSZ4709ET1 CK1 22.80 24 25.20 50 0.01 18.2 MMSZ4711ET1 CK3 25.65 27 28.35 50 0.01 20.4 MMSZ4717ET1 CK9 40.85 43 45.15 50 0.01 32.6
1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. *The “G’’ suffix indicates Pb−Free package available.
Marking
= 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
A
Zener Voltage (Note 1) Leakage Current
VZ (V) @ I
Min Nom Max
mA mA
ZT
IR @ V
R
V
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2
MMSZ4678ET1 Series
8
100
0
0
.2
TYPICAL CHARACTERISTICS
7
TYPICAL TC VALUES
6 5 4 3 2
VZ @ I
ZT
1 0
−1
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ
−2
−3
VZ, NOMINAL ZENER VOLTAGE (V)
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ
12111098765432
TYPICAL TC VALUES
VZ @ I
ZT
10
1
10 10
VZ, NOMINAL ZENER VOLTAGE (V)
1.2
1.0
0.8
0.6
0.4
0.2
, POWER DISSIPATION (WATTS)
D
P
1000
100
0
IZ = 1 mA
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
PD versus T
PD versus T
A
T, TEMPERATURE (°C)
L
Figure 3. Steady State Power Derating
TJ = 25°C I
= 0.1 I
Z(AC)
f = 1 kHz
5 mA
Z(DC)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
1000
RECTANGULAR WAVEFORM, TA = 25°C
100
10
, PEAK SURGE POWER (WATTS)
pk
P
1501251007550250
1
0.1
1 10 100 100
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1000
75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1)
100
20 mA
10
, DYNAMIC IMPEDANCE ( )Ω
ZT
Z
1
101
VZ, NOMINAL ZENER VOLTAGE
Figure 5. Effect of Zener Voltage on
100
, FORWARD CURRENT (mA)
F
I
10
150°C
1
75°C 25°C 0°C
1
1.11.00.90.80.70.60.50.4
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
Zener Impedance
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3
MMSZ4678ET1 Series
C, CAPACITANCE (pF)
1000
I
, ZENER CURRENT (mA)
0
1000
TYPICAL CHARACTERISTICS
100
10
100
10
1
1
0 V BIAS
1 V BIAS
BIAS AT 50% OF VZ NOM
TA = 25°C
101
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
TA = 25°C
100
100
10
0.1
, LEAKAGE CURRENT ( A)m
0.01
R
I
0.001
0.0001
0.00001
100
10
1
+150°C
+25°C
−55°C
9
80706050403020100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
TA = 25°C
1
Z
0.1
0.01 VZ, ZENER VOLTAGE (V)
Figure 9. Zener Voltage versus Zener Current
(V
Up to 12 V)
Z
100
90 80 70 60 50 40 30 20
% OF PEAK PULSE CURRENT
10
0
020406080
, ZENER CURRENT (mA)
Z
0.1
I
0.01
1086420
12
10 30 50 70 90
Figure 10. Zener Voltage versus Zener Current
t
P
PEAK VALUE I
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms
HALF VALUE I
t, TIME (ms)
t
r
RSM
@ 8 ms
RSM
Figure 11. 8 × 20 ms Pulse Waveform
VZ, ZENER VOLTAGE (V)
(12 V to 91 V)
/2 @ 20 ms
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4
MMSZ4678ET1 Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE E
D
A
A1
1
H
E
2
b
E
L
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
DIM MIN NOM MAX
A 0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b 0.51 0.61 0.71 0.020
−−−
3.56
2. ANODE
−−−
1.60
3.68 0.140
−−− −−−
c
E 2.54 2.69 2.84 0.100
H
E
L 0.25
STYLE 1:
PIN 1. CATHODE
MIN NOM MAX
0.15
0.055D 1.40 1.80
3.86
0.010
0.046
0.002
0.024
−−− −−−
0.063
0.106
0.145
−−− −−−
0.053
0.004
0.028
0.006
0.071
0.112
0.152
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
ǒ
SCALE 10:1
inches
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MMSZ4678ET1/D
5
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