ON Semiconductor MMFT960T1 Technical data
MMFT960T1
l
l
s
Preferred Device
Power MOSFET
300 mA, 60 Volts
N−Channel SOT−223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc−dc converters,
solenoid and relay drivers. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
Features
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement
• The SOT−223 Package can be Soldered Using Wave or Reflow
• The Formed Leads Absorb Thermal Stress During Soldering
Eliminating the Possibility of Damage to the Die
• Pb−Free Package is Available
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Drain−to−Source Voltage V
Gate−to−Source Voltage − Non−Repetitive V
Drain Current I
Total Power Dissipation @ TA = 25°C
(Note 1)
Derate above 25°C
Operating and Storage Temperature Range TJ, T
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
= 25°C unless otherwise noted)
C
DS
GS
D
P
D
stg
R
q
JA
T
L
60 V
± 30 V
300 mAdc
0.8
6.4
−65 to 150 °C
156 °C/W
260
10
W
mW/°C
°C
S
http://onsemi.com
300 mA, 60 VOLTS
R
DS(on)
G
1
2
3
MARKING DIAGRAM AND
PIN ASSIGNMENT
Gate
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
FT960 = Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
MMFT960T1 SOT−223 1000 Tape & Ree
MMFT960T1G SOT−223
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
N−Channel
4
4 Drain
AYW
FT960 G
G
2
1
Drain
(Pb−Free)
= 1.7 W
D
S
TO−261AA
CASE 318E
STYLE 3
3
Source
†
1000 Tape & Ree
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1
Publication Order Number:
MMFT960T1/D
MMFT960T1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0, ID = 10 mA)
Zero Gate Voltage Drain Current
(V
= 60 V, VGS = 0)
DS
Gate−Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 1.0 A)
Drain−to−Source On−Voltage
(VGS = 10 V, ID = 0.5 A)
(VGS = 10 V, ID = 1.0 A)
Forward Transconductance
(VDS = 25 V, ID = 0.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance C
(VDS = 25 V, V
= 0, f = 1.0 MHz)
GS
Transfer Capacitance C
Total Gate Charge
Gate−Source Charge Q
(VGS = 10 V, ID = 1.0 A, VDS = 48 V)
Gate−Drain Charge Q
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
DS(on)
g
C
oss
Q
iss
rss
gd
60 − − Vdc
− − 10
mAdc
− − 50 nAdc
1.0 − 3.5 Vdc
− − 1.7
W
Vdc
−
−
fs
− 600 − mmhos
− 65 −
−
−
0.8
1.7
pF
− 33 −
− 7.0 −
g
gs
− 3.2 −
− 1.2 −
nC
− 2.0 −
5
4
3
2
, DRAIN CURRENT (AMPS)
D
I
1
0
TYPICAL ELECTRICAL CHARACTERISTICS
1
TJ = 25°C
0.8
TJ = −55°C
VGS = 10 V
8 V
0.6
7 V
6 V
5 V
0.4
, DRAIN CURRENT (AMPS)
D
I
0.2
4 V
1086420
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
http://onsemi.com
2
TJ = 25°C
TJ = 125°C
VDS = 10 V
1086420
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