ON Semiconductor MJW21191, MJW21191G, MJW21192, MJW21192G Service Manual

MJW21192 (NPN),
MJW21191 (PNP)

Complementary Silicon
Plastic Power Transistors

Specifically designed for power audio output, or high power drivers

in audio amplifiers.

• DC Current Gain Specified up to 8.0 A at Temperature

• All On Characteristics at Temperature

• High SOA: 20 A, 18 V, 100 ms

• TO−247AE Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS

MJW21191

CEO

CB
EB

I

C

B

P

q

q

D

stg

JC
JA

MJW21192

150 Vdc
150 Vdc

5.0 Vdc

8.0
16

2.0 Adc

125

0.65

–65 to

+150

1.0
50

Unit

Adc

W

W/_C

_C

_C/W
_C/W

Rating Symbol

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous

Base Current I
Total Power Dissipation @ TC = 25_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

− Peak

TJ, T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1000

PNP

NPN

100

R
R

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8.0 A

POWER TRANSISTORS

COMPLEMENTARY SILICON

150 V, 125 W

TO−247

CASE 340L

STYLE 3

1

2

3

MARKING DIAGRAM

MJW2119x
AYWWG

1 BASE

2 COLLECTOR

x = 1 or 2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION

3 EMITTER

10

C, CAPACITANCE (pF)

1.0

1.0

10 100 1000

VR, REVERSE VOLTAGE (V)

Figure 1. Typical Capacitance @ 25°C

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005

June, 2005 − Rev. 2

1 Publication Order Number:

Device Package Shipping

MJW21191 TO−247 30 Units/Rail
MJW21191G TO−247

(Pb−Free)
MJW21192 TO−247 30 Units/Rail
MJW21192G TO−247

(Pb−Free)

30 Units/Rail

30 Units/Rail

MJW21192/D

MJW21192 (NPN), MJW21191 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 250 Vdc, IE = 0)

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 8.0 Adc, VCE = 2.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 8.0 Adc, IB = 1.6 Adc)

Base−Emitter On Voltage

(IC = 4.0 Adc, VCE = 2.0 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 1.0 Adc, VCE = 10 Vdc, f

= 1.0 MHz)

test

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT = ⎪hfe⎪• f

test

.

V

CEO(sus)

I

CES

I

EBO

h

V

CE(sat)

V

BE(on)

f

FE

Vdc

150 −

mAdc

− 10
mAdc

− 10

−

15

5.0

100

−
Vdc

−

−

1.0

2.0

− 2.0 Vdc

T

4.0 − MHz

1.0

D = 0.5

0.2

0.1

0.1

0.05

TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1.0 10

Figure 2. Thermal Response

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V

CE

limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.

DUTY
CYCLE,
D = t1/t

P

(pk)

t

1

t

2

Z

= r(t) R

θ

JC(t)

R

θ

JC

θ

JC

= 1.65°C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

− TC = P

J(pk)

(pk)

1

Z

θ

JC(t)

100 1000

t, TIME (s)

The data of Figures 3 and 4 is based on T

J(pk)

= 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
< 150_C. T

may be calculated from the data in

J(pk)

Figure 2. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

2

J(pk)

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2