MJL3281A (NPN)
MJL1302A (PNP)
Preferred Devices
Complementary Bipolar
Power Transistors
Features
• Exceptional Safe Operating Area
• NPN/PNP Gain Matching within 10% from 50 mA to 5 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency
• Pb−Free Packages are Available
Benefits
• Reliable Performance at Higher Powers
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal
• Greater Dynamic Range
• High Amplifier Bandwith
Applications
• High−End Consumer Audio Products
♦Home Amplifiers
♦Home Receivers
• Professional Audio Amplifiers
♦Theater and Stadium Sound Systems
♦Public Address Systems (PAs)
MAXIMUM RATINGS (T
Rating
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector−Emitter Voltage − 1.5 V V
Collector Current − Continuous
Base Current − Continuous I
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case R
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously . If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
= 25°C unless otherwise noted)
J
− Peak (Note 1)
Symbol Value Unit
stg
260 Vdc
260 Vdc
5.0 Vdc
260 Vdc
15
25
1.5 Adc
200
1.43
− 65 to
+150
0.625 °C/W
Adc
Watts
W/°C
°C
CEO
CBO
EBO
CEX
I
P
TJ, T
C
B
D
θ
JC
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15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
260 VOLTS
200 WATTS
MARKING DIAGRAM
MJLxxxxA
1
BASE
2 COLLECTOR
AYYWWG
3
EMITTER
25 Units/Rail
25 Units/Rail
25 Units/Rail
1
2
3
TO−264
CASE 340G
STYLE 2
xxxx = 3281 or 1302
A = Location Code
YY = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MJL3281A TO−264
MJL3281AG TO−264
MJL1302A TO−264 25 Units/Rail
MJL1302AG TO−264
Preferred devices are recommended choices for future use
and best overall value.
(Pb−Free)
(Pb−Free)
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 9
1 Publication Order Number:
MJL3281A/D
MJL3281A (NPN) MJL1302A (PNP)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
= 100 mAdc, IB = 0)
C
Collector Cutoff Current
= 260 Vdc, IE = 0)
(V
CB
Emitter Cutoff Current
(V
= 5 Vdc, IC = 0)
EB
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
= 50 Vdc, t = 1 s (non−repetitive)
CE
= 100 Vdc, t = 1 s (non−repetitive)
(V
CE
ON CHARACTERISTICS
DC Current Gain
(I
= 500 mAdc, VCE = 5 Vdc)
C
= 1 Adc, VCE = 5 Vdc)
(I
C
(I
= 3 Adc, VCE = 5 Vdc)
C
(I
= 5 Adc, VCE = 5 Vdc)
C
(I
= 8 Adc, VCE = 5 Vdc)
C
Collector−Emitter Saturation Voltage
(I
= 10 Adc, IB = 1 Adc)
C
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= 1 Adc, VCE = 5 Vdc, f
C
= 1 MHz)
test
Output Capacitance
(V
= 10 Vdc, IE = 0, f
CB
= 1 MHz)
test
Symbol Min Max Unit
V
CEO(sus)
Vdc
260 −
I
CBO
μAdc
− 50
I
EBO
μAdc
− 5
I
h
V
CE(sat)
S/b
FE
75
75
75
75
45
4
1
−
−
150
150
150
150
−
Adc
Vdc
− 3
f
T
MHz
30 −
C
ob
− 600
pF
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2
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJL1302A
50
40
30
20
10
TJ = 25°C
f
= 1 MHz
T
f, CURRENT BANDWIDTH PRODUCT (MHz)
test
0
0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
5 V
Figure 1. Typical Current Gain
Bandwidth Product
PNP MJL1302A NPN MJL3281A
1000
, DC CURRENT GAIN
FE
h
TJ = 100°C
100
−25 °C
25°C
VCE = 10 V
VCE = 5.0 V
NPN MJL3281A
60
50
5 V
40
30
20
TJ = 25°C
10
f
= 1 MHz
T
f, CURRENT BANDWIDTH PRODUCT (MHz)
test
0
0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
1000
25°C
, DC CURRENT GAIN
FE
h
TJ = 100°C
100
−25 °C
VCE = 10 V
VCE = 5.0 V
SATURATION VOLTAGE (VOLTS)
3.0
2.5
2.0
1.5
1.0
0.5
10
0.05
0
101.00.1
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain Figure 4. DC Current Gain
PNP MJL1302A NPN MJL3281A
TJ = 25°C
I
= 10
C/IB
V
BE(sat)
V
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Typical Saturation Voltages
CE(sat)
100
100101.00.1
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
10
0.05
0
101.00.1
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
I
= 10
C/IB
V
BE(sat)
V
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Typical Saturation Voltages
100
CE(sat)
100101.00.1
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3
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJL1302A NPN MJL3281A
PNP MJL1302A NPN MJL3281A
10
TJ = 25°C
10
TJ = 25°C
1.0
, BASE−EMITTER VOLTAGE (VOLTS)
BE(on)
V
0.1
10000
1000
C, CAPACITANCE (pF)
100
VCE = 5 V (DASHED)
VCE = 20 V (SOLID)
IC, COLLECTOR CURRENT (AMPS)
Figure 7. T ypical Base−Emitter Voltage
C
ib
C
ob
TJ = 25°C
f
= 1 MHz
test
VR, REVERSE VOLTAGE (VOLTS)
100101.00.1
100101.00.1
1.0
, BASE−EMITTER VOLTAGE (VOLTS)
BE(on)
V
0.1
10000
1000
C, CAPACITANCE (pF)
100
VCE = 5 V (DASHED)
VCE = 20 V (SOLID)
IC, COLLECTOR CURRENT (AMPS)
Figure 8. T ypical Base−Emitter Voltage
C
ib
C
ob
TJ = 25°C
f
= 1 MHz
test
VR, REVERSE VOLTAGE (VOLTS)
100101.00.1
100101.00.1
100
, COLLECTOR CURRENT (AMPS)
C
I
Figure 9. MJL1302A Typical Capacitance
Figure 10. MJL3281A Typical Capacitance
There are two limitations on the power handling ability of
10
1.0
10 ms
50 ms
1 sec
250 ms
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on T
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
0.1
100101.0 1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 11. Active Region Safe Operating Area
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down.
4
= 150°C; TC is vari-
J(pk)
− V
C
CE
MJL3281A (NPN) MJL1302A (PNP)
PACKAGE DIMENSIONS
TO−3PBL (TO−264)
CASE 340G−02
ISSUE J
Q
−B−
0.25 (0.010) MTB
U
N
A
L
P
K
2 PL
123
W
R
F
G
D
3 PL
0.25 (0.010) MTB
S
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
M
J
H
−T−
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIMAMIN MAX MIN MAX
28.0 29.0 1.102 1.142
B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
E 1.9 2.1 0.075 0.083
F 2.2 2.4 0.087 0.102
G 5.45 BSC 0.215 BSC
H 2.6 3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L 11.2 REF 0.411 REF
N 4.35 REF 0.172 REF
P 2.2 2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.25 REF 0.089 REF
U 6.3 REF 0.248 REF
W 2.8 3.2 0.110 0.125
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
INCHES
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJL3281A/D
5
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