ON Semiconductor MJE 13005 User Manual

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ON Semiconductor

SWITCHMODE Series
NPN Silicon Power Transistors

These devices are designed for high–voltage, high–speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.

SPECIFICATION FEATURES:

• V

CEO(sus)

• Reverse Bias SOA with Inductive Loads @ T

• Inductive Switching Matrix 2 to 4 Amp, 25 and 100C

• 700 V Blocking Capability

• SOA and Switching Applications Information.

MAXIMUM RATINGS

Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous

ООООООООООООООО

Base Current — Continuous

ООООООООООООООО

Emitter Current — Continuous

ООООООООООООООО

Total Power Dissipation @ TA = 25C

Derate above 25C

ООООООООООООООО

Total Power Dissipation @ TC = 25C

Derate above 25C

Operating and Storage Junction Temperature Range

400 V

tc @ 3A, 100C is 180 ns (Typ)

Rating

— Peak (1)

— Peak (1)

— Peak (1)

= 100C

C

Symbol

V

CEO(sus)

V

CEV

V

EBO

I

C

I

ООООО

ООООО

ООООО

ООООО

CM

I

BM

I

EM

P

P

TJ, T

I

B

I

E

D

D

stg

MJE13005

*ON Semiconductor Preferred Device

4 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS

75 WATTS

CASE 221A–09

TO–220AB

Value

400
700

9
4

ОООООО

ОООООО

ОООООО

ОООООО

8
2

4
6

12

2

16
75

600

–65 to +150

Unit

Vdc
Vdc
Vdc
Adc

ÎÎ

Adc

ÎÎ

Adc

ÎÎ

Watts

mW/C

ÎÎ

Watts

mW/C

C

*

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering

ООООООООООООООО

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  10%.

 Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 5

Symbol

R

θ

JA

R

θ

JC

T

ООООО

L

ОООООО

Max

62.5

1.67
275

Unit

C/W
C/W

C

ÎÎ

1 Publication Order Number:

MJE13005/D

MJE13005

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Duty Cycle

1%)

)

I

V

Vdc, T

100 C)

ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted)

C

Characteristic

*OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(I

= 10 mA, IB = 0)

C

ООООООООООООООООО

Collector Cutoff Current

(V

= Rated Value, V

CEV

ООООООООООООООООО

(V

= Rated Value, V

CEV

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TC = 100C)

BE(off)

Emitter Cutoff Current

(V

ООООООООООООООООО

= 9 Vdc, IC = 0)

EB

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased

*ON CHARACTERISTICS

DC Current Gain

(I

= 1 Adc, VCE = 5 Vdc)

C

ООООООООООООООООО

= 2 Adc, VCE = 5 Vdc)

(I

C

Collector–Emitter Saturation Voltage

(I

= 1 Adc, IB = 0.2 Adc)

C

ООООООООООООООООО

= 2 Adc, IB = 0.5 Adc)

(I

C

ООООООООООООООООО

(I

= 4 Adc, IB = 1 Adc)

C

(I

= 2 Adc, IB = 0.5 Adc, TC = 100C)

C

ООООООООООООООООО

Base–Emitter Saturation Voltage

(I

= 1 Adc, IB = 0.2 Adc)

C

ООООООООООООООООО

= 2 Adc, IB = 0.5 Adc)

(I

C

(I

= 2 Adc, IB = 0.5 Adc, TC = 100C)

ООООООООООООООООО

C

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(I

= 500 mAdc, VCE = 10 Vdc, f = 1 MHz)

C

ООООООООООООООООО

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 0.1 MHz)

CB

SWITCHING CHARACTERISTICS

Resistive Load (Table 2)

Delay Time
Rise Time
Storage Time

(VCC = 125 Vdc, IC = 2 A,
IB1 = IB2 = 0.4 A, tp = 25 µs,
Duty Cycle  1%)



Fall Time

Inductive Load, Clamped (Table 2, Figure 13)

Voltage Storage Time
Crossover Time

(IC = 2 A, V
I

= 0.4 A, V

= 0.4 A,

B1

clamp

BE(off)

= 300 Vdc,

= 5 Vdc, T

= 5

= 100C

=

C

Fall Time

*Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

Symbol

V

CEO(sus)

ÎÎÎ

I

CEV

ÎÎÎ

I

EBO

ÎÎÎ

I

S/b

RBSOA

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

ÎÎÎ

ÎÎÎ

V

BE(sat)

ÎÎÎ

ÎÎÎ

f

T

ÎÎÎ

C

ob

t

d

t

r

t

s

t

f

t

sv

t

c

t

fi

Min

400

ÎÎ

—

ÎÎ

—
—

ÎÎ

10

ÎÎ

8

—

ÎÎ

—

ÎÎ

—
—

ÎÎ

—

ÎÎ

—

ÎÎ

—

4

ÎÎ

—

—
—
—
—

—
—
—

Typ

—

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—

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—
—

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—

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—

—

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—

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—
—

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—

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—

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—

—

Î

65

0.025

0.3

1.7

0.4

0.9

0.32

0.16

Max

—

ÎÎ

1

ÎÎ

5
1

ÎÎ

See Figure 11
See Figure 12

60

ÎÎ

40

0.5

ÎÎ

0.6

ÎÎ

1
1

ÎÎ

1.2

ÎÎ

1.6

ÎÎ

1.5

—

ÎÎ

—

0.1

0.7
4

0.9

4

0.9

—

Unit

Vdc

Î

mAdc

Î

mAdc

Î

—

Î

Vdc

Î

Î

Î

Vdc

Î

Î

MHz

Î

pF

µs
µs
µs
µs

µs
µs
µs

http://onsemi.com

2

MJE13005

)

100

70

T

= 150°C

J

50

25°C

30

, DC CURRENT GAIN

FE

h

20

10

7

-55°C

VCE = 2 V
V

= 5 V

CE

5

0.04

0.1 0.4 2 4

0.06

0.2 1

0.6

IC, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

1.3

V

@ IC/IB = 4

BE(sat)

V

@ VCE = 2 V

1.1

0.9 0.35

BE(on)

T

= -55°C

J

, COLLECTOR-EMITTER VOLTAGE (VOLTS

V

CE

0.55

0.45

1.6

1.2

0.8

0.4

2

0

0.03

IC = 1 A

2 A

0.1 0.2 0.5 3
, BASE CURRENT (AMP)

I

B

3 A 4 A

0.30.05

Figure 2. Collector Saturation Region

IC/IB = 4

T

= 25°C

J

0.7 1 2

T

= -55°C

J

0.7

, BASE-EMITTER VOLTAGE (VOLTS)

0.5

BE

V

0.3

0.06 0.1 10.04 0.40.2 0.6

10 k

1 k

100

10

, COLLECTOR CURRENT (A)µI

1

C

0.1

-0.4 -0.2

25°C

VOLTAGE (VOLTS)

0.25

25°C

25°C

, COLLECTOR-EMITTER SATURATION

0.15

150°C

CE(sat)

V

2

4

0.05

0.06 0.1 10.04 0.40.2 0.6 2 4

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

Figure 3. Base–Emitter Voltage Figure 4. Collector–Emitter Saturation Voltage

2 k

VCE = 250 V

T

= 150°C

J

125°C
100°C

75°C

50°C

25°C

REVERSE FORWARD

0

V

, BASE-EMITTER VOLTAGE (VOLTS)

BE

Figure 5. Collector Cutoff Region

1 k
700
500

300

200

100

C, CAPACITANCE (pF)

70
50

30

20

+0.4+0.2

+0.6

0.3

C

ib

3

V

, REVERSE VOLTAGE (VOLTS)

R

10 30

Figure 6. Capacitance

150°C

10050510.5

C

ob

300

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