MJD112 (NPN)
MJD117 (PNP)
Preferred Device
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous
− Peak
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation (Note1)
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CEO
P
P
TJ, T
CB
EB
I
C
B
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
(Note 1)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
R
q
JC
R
q
JA
100 Vdc
100 Vdc
5 Vdc
2
4
50 mAdc
20
0.16
1.75
0.014
−65 to + 150 °C
6.25 °C/W
71.4 °C/W
Adc
W
W/°C
W
W/°C
http://onsemi.com
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS, 20 WATTS
MARKING
DIAGRAMS
4
YWW
2
1
3
DPAK
CASE 369C
4
1
2
3
DPAK−3
CASE 369D
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
J11xG
YWW
J11xG
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 7
1 Publication Order Number:
MJD112/D
MJD112 (NPN) MJD117 (PNP)
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
ООООООООООООООООООО
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ООООООООООООООООООО
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
Emitter Cutoff Current
ООООООООООООООООООО
(VBE = 5 Vdc, IC = 0)
Collector−Cutoff Current
(VCB = 80 Vdc, IE = 0)
ООООООООООООООООООО
Emitter−Cutoff Current
(VBE = 5 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
ООООООООООООООООООО
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
ООООООООООООООООООО
(IC = 4 Adc, VCE = 3 Vdc)
Collector−Emitter Saturation Voltage
ООООООООООООООООООО
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
ООООООООООООООООООО
Base−Emitter Saturation Voltage
(IC = 4 Adc, IB = 40 mAdc)
Symbol
V
CEO(sus)
ÎÎÎ
I
CEO
ÎÎÎ
I
CBO
I
EBO
ÎÎÎ
I
CBO
ÎÎÎ
I
EBO
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
ÎÎÎ
V
BE(sat)
Min
ÎÎ
100
−
ÎÎ
−
ÎÎ
−
−
ÎÎ
−
ÎÎ
500
1000
ÎÎ
200
ÎÎ
−
−
ÎÎ
−
Max
Î
−
20
Î
20
Î
2
10
Î
2
Î
−
12,000
Î
−
Î
2
3
Î
4
Unit
Vdc
ÎÎ
mAdc
ÎÎ
mAdc
mAdc
ÎÎ
mAdc
ÎÎ
mAdc
−
ÎÎ
ÎÎ
Vdc
ÎÎ
ÎÎ
Vdc
Base−Emitter On Voltage
ООООООООООООООООООО
(IC = 2 Adc, VCE = 3 Vdc)
V
BE(on)
ÎÎÎ
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
ООООООООООООООООООО
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD117
ООООООООООООООООООО
MJD112
f
T
ÎÎÎ
C
ob
ÎÎÎ
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
V
CC
−30 V
4
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V
2
APPROX
+8 V
0
V
1
51
APPROX
−12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
25 ms
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
R
D
B
1
+ 4 V
≈ 8 k
TUT
≈ 60
R
C
SCOPE
2
1
0.8
t, TIME (s)μ
0.6
0.4
0.2
0.04 0.2 40.1
PNP
NPN
0.06
IC, COLLECTOR CURRENT (AMP)
ÎÎ
−
Î
2.8
Vdc
ÎÎ
MHz
25
ÎÎ
−
Î
ÎÎ
pF
−
ÎÎ
−
VCC = 30 V
t
s
IC/IB = 250
0.4 2
200
Î
100
0.6 1
t
f
td @ V
ÎÎ
IB1 = I
B2
TJ = 25°C
t
= 0 V
BE(off)
r
Figure 1. Switching Times Test Circuit Figure 2. Switching Times
http://onsemi.com
2
1
ACTIVE−REGION SAFE−OPERATING AREA
0.7
0.5
0.3
0.2
0.1
0.07
0.05
r(t), EFFECTIVE TRANSIENT
0.03
0.02
THERMAL RESISTANCE (NORMALIZED)
0.01
0.01
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
, COLLECTOR CURRENT (AMP)
C
I
2
MJD112 (NPN) MJD117 (PNP)
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
t, TIME OR PULSE WIDTH (ms)
R
= r(t) R
q
JC(t)
R
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
q
= 6.25°C/W
− TC = P
(pk) qJC(t)
JC
1
Figure 3. Thermal Response
TAT
C
25
2.5
100ms
500ms
1ms
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TJ = 150°C
CURVES APPLY BELOW RATED V
5203
10730
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5ms
dc
CEO
50 70 200
100
1.5
0.5
, POWER DISSIPATION (WATTS)
D
P
20
2
15
10
1
5
0
0
25
SURFACE
MOUNT
50 75 100 125 15
P
(pk)
t
1
DUTY CYCLE, D = t1/t
T
TA
T, TEMPERATURE (°C)
C
t
2
2
1000
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
C
− V
CE
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T
= 150_C; T
J(pk)
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
< 150_C. T
J(pk)
may be calculated from the data in
J(pk)
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
http://onsemi.com
Figure 5. Power Derating
200
100
70
C, CAPACITANCE (pF)
50
30
20
10
0.04
C
ib
PNP
NPN
0.1 2 6 20
VR, REVERSE VOLTAGE (VOLTS)
1 4 10 40
0.60.40.20.06
C
TC = 25°C
C
ob
Figure 6. Capacitance
3
MJD112 (NPN) MJD117 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
NPN MJD112 PNP MJD117
, DC CURRENT GAIN
FE
h
6 k
4 k
3 k
2 k
1 k
800
600
400
300
0.04
0.06 0.2
3.4
3
IC =
0.5 A
2.6
2.2
TJ = 125°C
VCE = 3 V
25°C
−55 °C
2 A
0.4 1
4 A
0.1 0.6
IC, COLLECTOR CURRENT (AMP)
1 A
2 4 0.04
Figure 7. DC Current Gain
TJ = 125°C
, DC CURRENT GAIN
FE
h
6 k
4 k
3 k
2 k
1 k
800
600
400
300
0.06 0.2
3.4
3
IC =
2.6
0.5 A
2.2
TC = 125°C
25°C
−55 °C
0.1 0.6
IC, COLLECTOR CURRENT (AMP)
1 A 4 A2 A
0.4 1
VCE = 3 V
24
TJ = 125°C
1.8
1.4
1
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
0.6
V
0.1 0.2 0.5 1025
2.2
TJ = 25°C
1.8
V
@ IC/IB = 250
BE(sat)
1.4
1
V
V, VOLTAGE (VOLTS)
0.6
0.2
0.04
CE(sat)
0.06 0.2 20.1 0.60.4 1 4 0.04
1
IB, BASE CURRENT (mA)
@ IC/IB = 250
IC, COLLECTOR CURRENT (AMP)
1.8
1.4
1
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
0.6
20 50 100
V
0.1 0.2 0.5 10251
Figure 8. Collector Saturation Region
2.2
TJ = 25°C
1.8
V
@ IC/IB = 250
VBE @ VCE = 3 V
V, VOLTAGE (VOLTS)
BE(sat)
1.4
1
V
@ IC/IB = 250
CE(sat)
0.6
0.2
0.06 0.2 20.1 0.60.4 1 4
Figure 9. “On Voltages
20 50 100
IB, BASE CURRENT (mA)
VBE @ VCE = 3 V
IC, COLLECTOR CURRENT (AMP)
http://onsemi.com
4
MJD112 (NPN) MJD117 (PNP)
NPN MJD112 PNP MJD117
+0.8
+0.8
*APPLIED FOR IC/IB < hFE/3
0
−0.8
−1.6
−2.4
*qVC FOR V
CE(sat)
25°C TO 150°C
−0.8
−1.6
−2.4
−55 °C TO 25°C
−3.2
qVC FOR V
−4
, TEMPERATURE COEFFICIENTS (mV/C)°θ
V
−4.8
0.04
0.06 0.2
BE
0.1 0.6
25°C TO 150°C
−55 °C TO 25°C
0.4 1
24
−3.2
−4
, TEMPERATURE COEFFICIENTS (mV/C)°θ
V
−4.8
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
5
10
REVERSE FORWARD
4
10
3
10
VCE = 30 V
10
10
10
*APPLIES FOR IC/IB < hFE/3
0
25°C TO 150°C
*qVC FOR V
CE(sat)
−55 °C TO 25°C
25°C TO 150°C
qVB FOR V
0.04
0.06 0.20.1 0.60.4 1 2 4
BE
−55 °C TO 25°C
IC, COLLECTOR CURRENT (AMP)
5
REVERSE FORWARD
4
3
VCE = 30 V
2
10
TJ = 150°C
1
10
, COLLECTOR CURRENT (A)μI
C
0
10
−1
10
−0.6 −0.2 +0.8 +1 +1.2 +1.4
100°C
25°C
0−0.4
+0.2 +0.4 +0.6
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cut−Off Region
PNP
BASE
≈ 8 k ≈ 120
COLLECTOR
2
10
TJ = 150°C
1
10
, COLLECTOR CURRENT (A)μI
C
0
10
−1
10
+0.6 +0.2 −0.8 −1 −1.2 −1.4
100°C
25°C
0+0.4
−0.2 −0.4 −0.6
VBE, BASE−EMITTER VOLTAGE (VOLTS)
NPN
COLLECTOR
BASE
≈ 8 k ≈ 120
EMITTER
Figure 12. Darlington Schematic
http://onsemi.com
5
EMITTER
MJD112 (NPN) MJD117 (PNP)
ORDERING INFORMATION
Device Package Type Package Shipping
MJD112 DPAK
MJD112G DPAK
MJD112−001 DPAK−3
MJD112−1G DPAK−3
MJD112RL DPAK
MJD112RLG DPAK
MJD112T4 DPAK
MJD112T4G DPAK
MJD117 DPAK
MJD117G DPAK
MJD117−001 DPAK−3
MJD117−1G DPAK−3
MJD117T4 DPAK
MJD117T4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
DPAK
(Pb−Free)
369C
75 Units / Rail
369D
1800 Tape & Reel
369C
369D
369C 2500 Tape & Reel
2500 Tape & Reel
75 Units / Rail
†
http://onsemi.com
6
MJD112 (NPN) MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
SEATING
−T−
PLANE
B
V
S
R
4
A
123
K
F
L
D
2 PL
G
0.13 (0.005) T
C
E
Z
U
J
H
M
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.180 BSC 4.58 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
S 0.025 0.040 0.63 1.01
U 0.020 −−− 0.51 −−−
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
MILLIMETERSINCHES
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
3.0
0.118
5.80
0.228
1.6
0.063
SCALE 3:1
6.172
0.243
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MJD112 (NPN) MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
S
−T−
SEATING
PLANE
F
B
R
4
123
G
A
K
D 3 PL
0.13 (0.005) T
C
E
J
H
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
Z
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
0.090 BSC 2.29 BSC
G
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MJD112/D
8
Loading...