ON Semiconductor MJ21193-PNP, MJ21194-NPN User Manual
MJ21193-PNP
MJ21194-NPN
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant*
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16 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 250 WATTS
SCHEMATIC
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector−Emitter Voltage − 1.5 V V
Collector Current − Continuous I
Collector Current − Peak (Note 1) I
Base Current − Continuous I
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%. (continued)
CEO
CBO
EBO
CEX
CM
P
TJ, T
C
B
D
stg
250 Vdc
400 Vdc
5 Vdc
400 Vdc
16 Adc
30 Adc
5 Adc
250
1.43
− 65 to +200
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.7 °C/W
PNP
CASE 3
1
BASE
EMITTER 2
3
2
1
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MJ2119x = Device Code
G=Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
x = 3 or 4
NPN
CASE 3
1
BASE
EMITTER 2
MARKING
DIAGRAM
MJ2119xG
AYYWW
MEX
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
MJ21193G TO−3
(Pb−Free)
MJ21194G TO−3
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
100 Units / Tray
100 Units / Tray
†
MJ21193/D
MJ21193 − PNP MJ21194 − NPN
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
= 100 mAdc, IB = 0)
C
Collector Cutoff Current
= 200 Vdc, IB = 0)
(V
CE
Emitter Cutoff Current
(V
= 5 Vdc, IC = 0)
CE
Collector Cutoff Current
= 250 Vdc, V
(V
CE
BE(off)
= 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
= 50 Vdc, t = 1 s (non−repetitive)
CE
= 80 Vdc, t = 1 s (non−repetitive)
(V
CE
ON CHARACTERISTICS
DC Current Gain
(I
= 8 Adc, VCE = 5 Vdc)
C
= 16 Adc, IB = 5 Adc)
(I
C
Base−Emitter On Voltage
(I
= 8 Adc, VCE = 5 Vdc)
C
Collector−Emitter Saturation Voltage
(I
= 8 Adc, IB = 0.8 Adc)
C
= 16 Adc, IB = 3.2 Adc)
(I
C
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
= 28.3 V, f = 1 kHz, P
RMS
LOAD
= 100 W
RMShFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V) hFE
matched
Current Gain Bandwidth Product
(I
= 1 Adc, VCE = 10 Vdc, f
C
= 1 MHz)
test
Output Capacitance
(V
= 10 Vdc, IE = 0, f
CB
= 1 MHz)
test
NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
Symbol Min Ty p Max Unit
V
CEO(sus)
I
CEO
I
EBO
I
CEX
I
S/b
h
FE
V
BE(on)
V
CE(sat)
T
HD
f
C
T
ob
250 − − Vdc
− − 100
− − 100
− 100
mAdc
mAdc
mAdc
Adc
5
2.5
−
−
−
−
75
25
8
−
−
− − 2.2 Vdc
Vdc
−
−
−
−
−
−
0.8
0.08
1.4
4
−
−
4 − − MHz
− − 500 pF
%
PNP MJ21193
6.5
VCE = 10 V
6.0
5.5
5 V
5.0
4.5
4.0
TJ = 25°C
3.5
f
= 1 MHz
test
T
3.0
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
0.1 1.0 10
I
COLLECTOR CURRENT (AMPS)
C
Figure 1. Typical Current Gain
Bandwidth Product
T
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
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2
NPN MJ21194
8.0
7.0
6.0
10 V
5.0
4.0
VCE = 5 V
3.0
2.0
TJ = 25°C
1.0
f
= 1 MHz
test
0
0.1 1.0 10
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
1000
MJ21193 − PNP MJ21194 − NPN
TYPICAL CHARACTERISTICS
PNP MJ21193 NPN MJ21194
1000
, DC CURRENT GAIN
FE
h
1000
, DC CURRENT GAIN
FE
h
100
100
10
TJ = 100°C
25°C
-25°C
VCE = 20 V
TJ = 100°C
25°C
-25°C
IC COLLECTOR CURRENT (AMPS)
100
, DC CURRENT GAIN
FE
h
VCE = 20 V
100101.00.1
10
COLLECTOR CURRENT (AMPS)
I
C
Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V
VCE = 5 V
PNP MJ21193
TJ = 100°C
25°C
-25°C
1000
100
, DC CURRENT GAIN
FE
h
VCE = 20 V
NPN MJ21194
TJ = 100°C
25°C
-25°C
100101.00.1
, COLLECTOR CURRENT (A)
C
I
10
I
COLLECTOR CURRENT (AMPS)
C
Figure 5. DC Current Gain, V
PNP MJ21193
30
1.5 A
5.0
25
20
15
10
0
5.0010152025
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Typical Output Characteristics
100101.00.1
= 5 V Figure 6. DC Current Gain, VCE = 5 V
CE
10
IC COLLECTOR CURRENT (AMPS)
NPN MJ21194
35
IB = 2 A
1 A
0.5 A
TJ = 25°C
, COLLECTOR CURRENT (A)
C
I
5.0
30
25
20
15
10
0
5.0010152025
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IB = 2 A
1.5 A
1 A
0.5 A
Figure 8. Typical Output Characteristics
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3
100101.00.1
TJ = 25°C
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