ON Semiconductor MJ21193-PNP, MJ21194-NPN User Manual

MJ21193-PNP
MJ21194-NPN

Silicon Power Transistors

The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain

• Excellent Gain Linearity

• High SOA

• These Devices are Pb−Free and are RoHS Compliant*

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16 AMP COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS, 250 WATTS

SCHEMATIC

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector−Emitter Voltage − 1.5 V V

Collector Current − Continuous I

Collector Current − Peak (Note 1) I

Base Current − Continuous I

Total Power Dissipation @ TC = 25°C
Derate Above 25°C

Operating and Storage Junction
Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%. (continued)

CEO

CBO

EBO

CEX

CM

P

TJ, T

C

B

D

stg

250 Vdc

400 Vdc

5 Vdc

400 Vdc

16 Adc

30 Adc

5 Adc

250

1.43

−   65 to +200

W

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

0.7 °C/W

PNP

CASE 3

1

BASE

EMITTER 2

3

2

1

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MJ2119x = Device Code

G=Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin

x = 3 or 4

NPN

CASE 3

1

BASE

EMITTER 2

MARKING
DIAGRAM

MJ2119xG

AYYWW

MEX

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 6

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

MJ21193G TO−3

(Pb−Free)

MJ21194G TO−3

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

100 Units / Tray

100 Units / Tray

†

MJ21193/D

MJ21193 − PNP MJ21194 − NPN

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(I

= 100 mAdc, IB = 0)

C

Collector Cutoff Current

= 200 Vdc, IB = 0)

(V

CE

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

CE

Collector Cutoff Current

= 250 Vdc, V

(V

CE

BE(off)

= 1.5 Vdc)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V

= 50 Vdc, t = 1 s (non−repetitive)

CE

= 80 Vdc, t = 1 s (non−repetitive)

(V

CE

ON CHARACTERISTICS

DC Current Gain

(I

= 8 Adc, VCE = 5 Vdc)

C

= 16 Adc, IB = 5 Adc)

(I

C

Base−Emitter On Voltage

(I

= 8 Adc, VCE = 5 Vdc)

C

Collector−Emitter Saturation Voltage

(I

= 8 Adc, IB = 0.8 Adc)

C

= 16 Adc, IB = 3.2 Adc)

(I

C

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

RMShFE

unmatched

(Matched pair hFE = 50 @ 5 A/5 V) hFE

matched

Current Gain Bandwidth Product

(I

= 1 Adc, VCE = 10 Vdc, f

C

= 1 MHz)

test

Output Capacitance

(V

= 10 Vdc, IE = 0, f

CB

= 1 MHz)

test

NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%

Symbol Min Ty p Max Unit

V

CEO(sus)

I

CEO

I

EBO

I

CEX

I

S/b

h

FE

V

BE(on)

V

CE(sat)

T

HD

f

C

T

ob

250 − − Vdc

− − 100

− − 100

− 100

mAdc

mAdc

mAdc

Adc

5

2.5

−

−

−

−

75

25

8

−

−

− − 2.2 Vdc

Vdc

−

−

−

−

−

−

0.8

0.08

1.4
4

−

−

4 − − MHz

− − 500 pF

%

PNP MJ21193

6.5

VCE = 10 V

6.0

5.5
5 V

5.0

4.5

4.0

TJ = 25°C

3.5

f

= 1 MHz

test

T

3.0

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

0.1 1.0 10
I

COLLECTOR CURRENT (AMPS)

C

Figure 1. Typical Current Gain

Bandwidth Product

T

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

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2

NPN MJ21194

8.0

7.0

6.0

10 V

5.0

4.0

VCE = 5 V

3.0

2.0

TJ = 25°C

1.0
f

= 1 MHz

test

0

0.1 1.0 10
IC COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

1000

MJ21193 − PNP MJ21194 − NPN

TYPICAL CHARACTERISTICS

PNP MJ21193 NPN MJ21194

1000

, DC CURRENT GAIN

FE

h

1000

, DC CURRENT GAIN

FE

h

100

100

10

TJ = 100°C

25°C

-25°C

VCE = 20 V

TJ = 100°C

25°C

-25°C

IC COLLECTOR CURRENT (AMPS)

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

100101.00.1

10

COLLECTOR CURRENT (AMPS)

I

C

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

VCE = 5 V

PNP MJ21193

TJ = 100°C

25°C

-25°C

1000

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

NPN MJ21194

TJ = 100°C

25°C

-25°C

100101.00.1

, COLLECTOR CURRENT (A)

C

I

10

I

COLLECTOR CURRENT (AMPS)

C

Figure 5. DC Current Gain, V

PNP MJ21193

30

1.5 A

5.0

25

20

15

10

0

5.0010152025

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

Figure 7. Typical Output Characteristics

100101.00.1

= 5 V Figure 6. DC Current Gain, VCE = 5 V

CE

10

IC COLLECTOR CURRENT (AMPS)

NPN MJ21194

35

IB = 2 A

1 A

0.5 A

TJ = 25°C

, COLLECTOR CURRENT (A)

C

I

5.0

30

25

20

15

10

0

5.0010152025

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IB = 2 A

1.5 A

1 A

0.5 A

Figure 8. Typical Output Characteristics

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3

100101.00.1

TJ = 25°C

3.0

2.5

2.0

TJ = 25°C

IC/IB = 10

MJ21193 − PNP MJ21194 − NPN

TYPICAL CHARACTERISTICS

PNP MJ21193 NPN MJ21194

1.4

1.2

TJ = 25°C

1.0

0.8

IC/IB = 10

V

BE(sat)

SATURATION VOLTAGE (VOLTS)

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

1.5

1.0

0.5

0

10

1.0

0.1

V

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

PNP MJ21193 NPN MJ21194

TJ = 25°C

VCE = 20 V (SOLID)

IC, COLLECTOR CURRENT (AMPS)

VCE = 5 V (DASHED)

0.6

0.4

SATURATION VOLTAGE (VOLTS)

0.2

100101.00.1

0

IC, COLLECTOR CURRENT (AMPS)

V

CE(sat)

100101.00.1

Figure 10. Typical Saturation Voltages

10

TJ = 25°C

VCE = 20 V (SOLID)

1.0

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

100101.00.1

0.1

IC, COLLECTOR CURRENT (AMPS)

VCE = 5 V (DASHED)

100101.00.1

100

, COLLECTOR CURRENT (AMPS)

C

I

Figure 11. Typical Base−Emitter Voltage

10

TC = 25°C

1.0

0.1

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1 SEC

100101.0 1000

Figure 13. Active Region Safe Operating Area

There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
its of the transistor that must be observed for reliable opera­tion; i.e., the transistor must not be subjected to greater dissip­ation than the curves indicate.

The data of Figure 13 is based on T
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break­down.

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Figure 12. Typical Base−Emitter Voltage

− VCE lim-

C

= 200°C; TC is vari-

J(pk)

MJ21193 − PNP MJ21194 − NPN

10000

1000

C, CAPACITANCE (pF)

100

10000

C

TJ = 25°C TJ = 25°C

C

f

= 1 MHz f

(test)

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. MJ21193 Typical Capacitance

ib

100101.00.1

1000

C, CAPACITANCE (pF)

100

(test)

= 1 MHz

ob

Figure 15. MJ21194 Typical Capacitance

1.2

1.1

1.0

0.9

C

ib

C

ob

VR, REVERSE VOLTAGE (VOLTS)

100101.00.1

0.8

, TOTAL HARMONIC

DISTORTION (%)

HD

T

0.7

0.6

AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC

DISTORTION

ANALYZER

FREQUENCY (Hz)

Figure 16. Typical Total Harmonic Distortion

+50 V

SOURCE

AMPLIFIER

50 W

DUT

0.5 W

0.5 W

DUT

10000010000100010010

8.0 W

-50 V

Figure 17. Total Harmonic Distortion Test Circuit

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5

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 1:1

TO−204 (TO−3)

CASE 1−07

ISSUE Z DATE 05/18/1988

A

N

C

E

D

2 PL

0.13 (0.005) Y

U

V

H

L

2

1

G

K

M

−Y−

−T−

B

T

SEATING
PLANE

M

Q

M

−Q−

0.13 (0.005) T

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

STYLE 6:

PIN 1. GATE

2. EMITTER

CASE: COLLECTOR

M

STYLE 2:

CASE: EMITTER

STYLE 7:

CASE: CATHODE

Y

PIN 1. BASE

2. COLLECTOR

PIN 1. ANODE

2. OPEN

M

STYLE 3:

PIN 1. GATE

2. SOURCE

CASE: DRAIN

STYLE 8:

PIN 1. CATHODE #1

2. CATHODE #2

CASE: ANODE

STYLE 4:

STYLE 9:

NOTES:

PIN 1. GROUND

2. INPUT

CASE: OUTPUT

PIN 1. ANODE #1

2. ANODE #2

CASE: CATHODE

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 5:

PIN 1. CATHODE

2. EXTERNAL TRIP/DELAY

CASE: ANODE

MILLIMETERSINCHES

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

© Semiconductor Components Industries, LLC, 2000

1 Case Outline Number:

January , 2000 − Rev. 07Z

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