MJ15023 (PNP),
MJ15025 (PNP)
Silicon Power Transistors
The MJ15023 and MJ15025 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area
• High DC Current Gain
• Complementary to MJ15022 (NPN), MJ15024 (NPN)
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJ15023
MJ15025
Collector−Base Voltage
MJ15023
MJ15025
Emitter−Base Voltage V
Collector−Emitter Voltage V
Collector Current − Continuous (Note 1) I
Collector Current − Peak (Note 1) I
Base Current − Continuous I
Total Device Dissipation
= 25_C
@ T
C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
V
CEO
V
CBO
EBO
CEX
CM
P
TJ, T
C
B
D
stg
200
250
350
400
5 Vdc
400 Vdc
16 Adc
30 Adc
5 Adc
250
1.43
−65 to +200
Vdc
Vdc
W
W/_C
_C
http://onsemi.com
16 AMPERES
SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
COLLECTOR
CASE
1
BASE
2
EMITTER
CASE
2
1
TO−204 (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1502xG
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 12
R
q
JC
0.70
_C/W
1 Publication Order Number:
MJ1502x = Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
x = 3 or 5
ORDERING INFORMATION
Device Package Shipping
MJ15023G TO−204
MJ15025G TO−204
(Pb−Free)
(Pb−Free)
100 Units / Tray
100 Units / Tray
MJ15023/D
MJ15023 (PNP), MJ15025 (PNP)
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
= 100 mAdc, IB = 0)
C
MJ15023
MJ15025
Collector Cutoff Current
(VCE = 200 Vdc, V
MJ15023
(VCE = 250 Vdc, V
MJ15025
BE(off)
BE(off)
= 1.5 Vdc)
= 1.5 Vdc)
Collector Cutoff Current
(V
= 150 Vdc, IB = 0)
CE
MJ15023
(VCE = 200 Vdc, IB = 0)
MJ15025
Emitter Cutoff Current
(V
= 5 Vdc, IB = 0)
CE
Both
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
= 50 Vdc, t = 0.5 s (non−repetitive))
CE
(VCE = 80 Vdc, t = 0.5 s (non−repetitive))
ON CHARACTERISTICS
DC Current Gain
(I
= 8 Adc, VCE = 4 Vdc)
C
(IC = 16 Adc, VCE = 4 Vdc)
Collector−Emitter Saturation Voltage
(I
= 8 Adc, IB = 0.8 Adc)
C
(IC = 16 Adc, IB = 3.2 Adc)
Base−Emitter On Voltage
(I
= 8 Adc, VCE = 4 Vdc)
C
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= 1 Adc, VCE = 10 Vdc, f
C
= 1 MHz)
test
Output Capacitance
(V
= 10 Vdc, IE = 0, f
CB
= 1 MHz)
test
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
Symbol Min Max Unit
V
CEO(sus)
I
CEX
I
CEO
I
EBO
200
250
−
−
−
−
−
−
mAdc
250
250
mAdc
500
500
mAdc
− 500
I
h
V
CE(sat)
V
BE(on)
C
S/b
f
FE
5
2
15
5
−
−
−
−
60
−
1.4
4.0
− 2.2
T
ob
4 −
− 600
Adc
Vdc
Vdc
MHz
−
−
pF
100
50
TC = 25°C
20
10
5.0
1.0
BONDING WIRE LIMITED
THERMAL LIMITATION
, COLLECTOR CURRENT (AMPS)
C
I
0.2
0.1
0.1 0.2 0.5 10 1 k
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
20
50 250
500100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
http://onsemi.com
2
= 200_C; TC is
J(pk)
− V
C
CE
Loading...