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MJ15022 (NPN),
MJ15024 (NPN)
Silicon Power Transistors
The MJ15022 and MJ15024 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area
• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant*
• Complementary to MJ15023 (PNP), MJ15025 (PNP)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJ15022
MJ15024
Collector−Base Voltage
MJ15022
MJ15024
Emitter−Base Voltage V
Collector−Emitter Voltage V
Collector Current − Continuous I
Collector Current − Peak (Note 1) I
Base Current − Continuous I
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
V
CEO
V
CBO
EBO
CEX
CM
P
TJ, T
R
C
B
D
q
JC
stg
200
250
350
400
5 Vdc
400 Vdc
16 Adc
30 Adc
5 Adc
250
1.43
−65 to +200
0.70
Vdc
Vdc
W
W/_C
_C
_C/W
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16 AMPERES
SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
SCHEMATIC
CASE
3
1
BASE
2
EMITTER
3
2
1
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1502xG
AYWW
MEX
MJ1502x = Device Code
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
x = 2 or 4
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 12
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
MJ15022G TO−204
MJ15024G TO−204
(Pb−Free)
(Pb−Free)
100 Units / Tray
100 Units / Tray
MJ15022/D
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MJ15022 (NPN), MJ15024 (NPN)
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
= 100 mAdc, IB = 0) MJ15022
C
Collector Cutoff Current
(V
= 200 Vdc, V
CE
= 250 Vdc, V
(V
CE
= 1.5 Vdc) MJ15022
BE(off)
= 1.5 Vdc) MJ15024
BE(off)
Collector Cutoff Current
(V
= 150 Vdc, IB = 0) MJ15022
CE
= 200 vdc, IB = 0) MJ15024
(V
CE
Emitter Cutoff Current
(V
= 5 Vdc, IB = 0)
CE
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
= 50 Vdc, t = 0.5 s (non−repetitive))
CE
= 80 Vdc, t = 0.5 s (non−repetitive))
(V
CE
ON CHARACTERISTICS
DC Current Gain
(I
= 8 Adc, VCE = 4 Vdc)
C
= 16 Adc, VCE = 4 Vdc)
(I
C
Collector−Emitter Saturation Voltage
(I
= 8 Adc, IB = 0.8 Adc)
C
= 16 Adc, IB = 3.2 Adc)
(I
C
Base−Emitter On Voltage
(I
= 8 Adc, VCE = 4 Vdc)
C
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= 1 Adc, VCE = 10 Vdc, f
C
= 1 MHz)
test
Output Capacitance
(V
= 10 Vdc, IE = 0, f
CB
= 1 MHz)
test
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
MJ15024
Symbol
V
CEO(sus)
I
CEX
I
CEO
I
EBO
I
S/b
h
FE
V
CE(sat)
V
BE(on)
f
T
C
ob
Min
200
250
−
−
−
−
−
5
2
15
5
−
−
−
4
−
Max
−
−
250
250
500
500
500
−
−
60
−
1.4
4.0
2.2
−
500
Unit
−
mAdc
mAdc
mAdc
Adc
−
Vdc
Vdc
MHz
pF
100
50
TC = 25°C
20
10
5.0
BONDING WIRE LIMITED
1.0
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
, COLLECTOR CURRENT (AMPS)
C
I
0.2
LIMITED
0.1
0.1 0.2 0.5 10 1 k
20
50 250
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.
500100
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2
= 200_C; TC is
J(pk)
− V
C
CE
Page 3
4000
3000
1000
500
C, CAPACITANCE (pF)
100
40
0.3
MJ15022 (NPN), MJ15024 (NPN)
C
ib
C
ob
5.0
, REVERSE VOLTAGE (VOLTS)
V
R
Figure 2. Capacitances
TYPICAL CHARACTERISTICS
50
TJ = 25°C
10010
3003010.5
9
8
7
6
5
4
3
2
1
0
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
T
f
0.1 0.3 0.5
Figure 3. Current−Gain — Bandwidth Product
TJ = 25°C
V
f
1.0 5.0
2.0 10
IC, COLLECTOR CURRENT (AMPS)
CE
Tes t
= 10 V
= 1 MHz
200
100
50
20
10
, DC CURRENT GAIN
FE
h
5.0
1.0
0.2 10 205.02.01.00.5
TJ = 100°C
TJ = 25°C
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain
1.8
1.4
VCE = 4 V
V, VOLTAGE (VOLTS)
1.8
1.4
1.0
0.8
0.2
0
0.15
TJ = 25°C
100°C
25°C
V
@ VCE = 4 V
BE(on)
V
@ IC/IB = 10
CE(sat)
100°C
0.5
, COLLECTOR CURRENT (AMPS)
I
C
2.01.0
Figure 5. “On” Voltage
TJ = 25°C
10
205.0
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
V
1.0
0.6
0.2
0
0.03
16 A
8 A
IC = 4 A
1.0 305.02.00.5
, BASE CURRENT (AMPS)
I
B
100.20.1
Figure 6. Collector Saturation Region
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3
Page 4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 1:1
TO−204 (TO−3)
CASE 1−07
ISSUE Z DATE 05/18/1988
A
N
C
E
D
2 PL
0.13 (0.005) Y
U
V
H
L
2
1
G
−T−
K
M
−Y−
B
T
SEATING
PLANE
M
Q
M
−Q−
0.13 (0.005) T
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
STYLE 6:
PIN 1. GATE
2. EMITTER
CASE: COLLECTOR
M
STYLE 2:
STYLE 7:
M
Y
PIN 1. BASE
2. COLLECTOR
CASE: EMITTER
PIN 1. ANODE
2. OPEN
CASE: CATHODE
STYLE 3:
PIN 1. GATE
2. SOURCE
CASE: DRAIN
STYLE 8:
PIN 1. CATHODE #1
2. CATHODE #2
CASE: ANODE
STYLE 4:
STYLE 9:
NOTES:
PIN 1. GROUND
2. INPUT
CASE: OUTPUT
PIN 1. ANODE #1
2. ANODE #2
CASE: CATHODE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 5:
PIN 1. CATHODE
2. EXTERNAL TRIP/DELAY
CASE: ANODE
MILLIMETERSINCHES
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