ON Semiconductor MJ15003, MJ15004 User Manual

MJ15003 (NPN),
MJ15004 (PNP)

Complementary Silicon
Power Transistors

The MJ15003 and MJ15004 are power transistors designed for high

power audio, disk head positioners and other linear applications.

Features

• High Safe Operating Area

• For Low Distortion Complementary Designs

• High DC Current Gain

• These Devices are Pb−Free and are RoHS Compliant*

http://onsemi.com

20 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

140 VOLTS, 250 WATTS

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

Base Current − Continuous I

Emitter Current − Continuous I

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction
Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

CEO

CBO

EBO

P

TJ, T

C

B

E

D

stg

140 Vdc

140 Vdc

5 Vdc

20 Adc

5 Adc

25 Adc

250

1.43

–65 to + 200 °C

W

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Maximum Lead Temperature for Soldering
Purposes 1/16″ from Case for v 10 secs

R

q

JC

T

L

0.70 °C/W

265 °C

PNP

1

BASE

EMITTER 2

1

MJ1500xG

AYYWW

MEX

SCHEMATIC

CASE 3

1

BASE

TO−204AA (TO−3)

3

2

CASE 1−07

STYLE 1

MARKING DIAGRAM

MJ1500x = Device Code

G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin

x = 3 or 4

NPN

CASE 3

EMITTER 2

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 16

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

MJ15003G TO−204AA

MJ15004G

(Pb−Free)

TO−204AA

(Pb−Free)

100 Units/Tray

100 Units/Tray

MJ15003/D

MJ15003 (NPN), MJ15004 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector Emitter Sustaining Voltage (Note 1)

= 200 mAdc, IB = 0)

(I

C

Collector Cutoff Current

(V

= 140 Vdc, V

CE

(VCE = 140 Vdc, V

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TC = 150°C)

BE(off)

Collector Cutoff Current
(V

= 140 Vdc, IB = 0)

CE

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

EB

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non repetitive))

= 100 Vdc, t = 1 s (non repetitive))

(V

CE

ON CHARACTERISTICS

DC Current Gain

= 5 Adc, VCE = 2 Vdc)

(I

C

Collector Emitter Saturation Voltage

(I

= 5 Adc, IB = 0.5 Adc)

C

Base Emitter On Voltage

(I

= 5 Adc, VCE = 2 Vdc)

C

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

= 0.5 Adc, VCE = 10 Vdc, f

(I

C

= 0.5 MHz)

test

Output Capacitance

(V

= 10 Vdc, IE = 0, f

CB

= 1 MHz)

test

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

Symbol Min Max Unit

V

CEO(sus)

I

CEX

I

CEO

I

EBO

I

S/b

h

FE

V

CE(sat)

V

BE(on)

f

c

ob

T

140 − Vdc

−

−

− 250

− 100

100

2

mAdc

mAdc

mAdc

mAdc

Adc

5.0

1.0

−

−

25 150 −

− 1.0 Vdc

− 2.0 Vdc

2.0 − MHz

− 1000 pF

100

150°C

25°C

−55°C

, DC CURRENT GAIN

FE

h

10

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage

TYPICAL CHARACTERISTICS MJ15003G (NPN)

0.8

VCE = 2 V

http://onsemi.com

, COLL−EMIT SATURATION

CE(sat)

V

1001010.1

2

0.7

0.6

0.5

0.4

0.3

VOLTAGE (V)

0.2

0.1

0

IC/IB = 10

150°C

25°C

−55°C

1001010.1

MJ15003 (NPN), MJ15004 (PNP)

TYPICAL CHARACTERISTICS MJ15003G (NPN)

1.6

IC/IB = 10

1.4

1.2

1.0

−55°C

0.8

25°C

0.6

VOLTAGE (V)

, BASE−EMIT SATURATION

0.4
150°C

0.2

BE(sat)

V

0

IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V)

Figure 3. Base−Emitter Saturation Voltage Figure 4. Safe Operating Area

1,000

150°C

100

−55°C

10

, DC CURRENT GAIN

FE

h

1

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 5. DC Current Gain Figure 6. Collector−Emitter Saturation Voltage

25°C

100

10

1.0 Sec

1

, COLLECTOR CURRENT (A)

C

I

1001010.1

0.1

TYPICAL CHARACTERISTICS MJ15004G (PNP)

1.0

VCE = 2 V

1001010.1

VOLTAGE (V)

, COLL−EMIT SATURATION

CE(sat)

V

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

100 mSec

1,000100101

IC/IB = 10

150°C

−55°C

25°C

1001010.1

VOLTAGE (V)

, BASE−EMIT SATURATION

BE(sat)

V

1.4

1.2

1.0

0.8

0.6

0.4

0.2

IC/IB = 10

−55°C

25°C

150°C

0

IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)

100

10

, COLLECTOR CURRENT (A)

C

I

1010.1

0.1

1.0 Sec

1

Figure 7. Base−Emitter Saturation Voltage Figure 8. Safe Operating Area

http://onsemi.com

3

100 mSec

1,000100101

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 1:1

TO−204 (TO−3)

CASE 1−07

ISSUE Z DATE 05/18/1988

A

N

C

E

D

2 PL

0.13 (0.005) Y

U

V

H

L

2

1

G

K

M

−Y−

−T−

SEATING
PLANE

M

Q

T

M

B

−Q−

0.13 (0.005) T

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

STYLE 6:

PIN 1. GATE

2. EMITTER

CASE: COLLECTOR

M

STYLE 2:

CASE: EMITTER

STYLE 7:

CASE: CATHODE

Y

PIN 1. BASE

2. COLLECTOR

PIN 1. ANODE

2. OPEN

M

STYLE 3:

PIN 1. GATE

2. SOURCE

CASE: DRAIN

STYLE 8:

PIN 1. CATHODE #1

2. CATHODE #2

CASE: ANODE

STYLE 4:

STYLE 9:

NOTES:

PIN 1. GROUND

2. INPUT

CASE: OUTPUT

PIN 1. ANODE #1

2. ANODE #2

CASE: CATHODE

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 5:

PIN 1. CATHODE

2. EXTERNAL TRIP/DELAY

CASE: ANODE

MILLIMETERSINCHES

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for ea c h c u s t o m e r a p p l i c a t i o n b y c u s t o m e r’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

© Semiconductor Components Industries, LLC, 2000

1 Case Outline Number:

January , 2000 − Rev. 07Z

1

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
Email Requests to: [e-mail]

onsemi Website: www.onsemi.com

TECHNICAL SUPPORT
North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: [phone]

Europe, Middle East and Africa Technical Support:

Phone: [phone]
For additional information, please contact your local Sales Representative

◊