ON Semiconductor MJ15003, MJ15004 User Manual
MJ15003 (NPN),
MJ15004 (PNP)
Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area
• For Low Distortion Complementary Designs
• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant*
http://onsemi.com
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Base Current − Continuous I
Emitter Current − Continuous I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CEO
CBO
EBO
P
TJ, T
C
B
E
D
stg
140 Vdc
140 Vdc
5 Vdc
20 Adc
5 Adc
25 Adc
250
1.43
–65 to + 200 °C
W
W/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/16″ from Case for v 10 secs
R
q
JC
T
L
0.70 °C/W
265 °C
PNP
1
BASE
EMITTER 2
1
MJ1500xG
AYYWW
MEX
SCHEMATIC
CASE 3
1
BASE
TO−204AA (TO−3)
3
2
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500x = Device Code
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
x = 3 or 4
NPN
CASE 3
EMITTER 2
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 16
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
MJ15003G TO−204AA
MJ15004G
(Pb−Free)
TO−204AA
(Pb−Free)
100 Units/Tray
100 Units/Tray
MJ15003/D
MJ15003 (NPN), MJ15004 (PNP)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
= 200 mAdc, IB = 0)
(I
C
Collector Cutoff Current
(V
= 140 Vdc, V
CE
(VCE = 140 Vdc, V
= 1.5 Vdc)
BE(off)
= 1.5 Vdc, TC = 150°C)
BE(off)
Collector Cutoff Current
(V
= 140 Vdc, IB = 0)
CE
Emitter Cutoff Current
(V
= 5 Vdc, IC = 0)
EB
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non repetitive))
= 100 Vdc, t = 1 s (non repetitive))
(V
CE
ON CHARACTERISTICS
DC Current Gain
= 5 Adc, VCE = 2 Vdc)
(I
C
Collector Emitter Saturation Voltage
(I
= 5 Adc, IB = 0.5 Adc)
C
Base Emitter On Voltage
(I
= 5 Adc, VCE = 2 Vdc)
C
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
= 0.5 Adc, VCE = 10 Vdc, f
(I
C
= 0.5 MHz)
test
Output Capacitance
(V
= 10 Vdc, IE = 0, f
CB
= 1 MHz)
test
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
Symbol Min Max Unit
V
CEO(sus)
I
CEX
I
CEO
I
EBO
I
S/b
h
FE
V
CE(sat)
V
BE(on)
f
c
ob
T
140 − Vdc
−
−
− 250
− 100
100
2
mAdc
mAdc
mAdc
mAdc
Adc
5.0
1.0
−
−
25 150 −
− 1.0 Vdc
− 2.0 Vdc
2.0 − MHz
− 1000 pF
100
150°C
25°C
−55°C
, DC CURRENT GAIN
FE
h
10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
TYPICAL CHARACTERISTICS MJ15003G (NPN)
0.8
VCE = 2 V
http://onsemi.com
, COLL−EMIT SATURATION
CE(sat)
V
1001010.1
2
0.7
0.6
0.5
0.4
0.3
VOLTAGE (V)
0.2
0.1
0
IC/IB = 10
150°C
25°C
−55°C
1001010.1
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