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MCR25D, MCR25M, MCR25N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS
• High Surge Current Capability — 300 Amperes
• Rugged, Economical TO–220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of I
Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C
• Device Marking: Logo, Device Type, e.g., MCR25D, Date Code
, VGT, and IH Specified for
GT
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SCRs
25 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MAXIMUM RATINGS (T
Rating
Peak Repetitive Off–State V oltage
(TJ = –40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open) MCR25D
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range T
Storage Temperature Range T
(1) V
and V
DRM
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
RRM
= 25°C unless otherwise noted)
J
Symbol Value Unit
(1)
MCR25M
MCR25N
for all types can be applied on a continuous basis. Ratings
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I2t 373 A2sec
P
GM
P
G(AV)
I
GM
J
stg
400
600
800
25 A
300 A
20.0 Watts
0.5 Watt
2.0 A
–40 to
+125
–40 to
+150
Volts
°C
°C
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1
2
3
4
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device Package Shipping
MCR25D TO220AB 50 Units/Rail
MCR25M TO220AB
MCR25N TO220AB
Preferred devices are recommended choices for future use
and best overall value.
50 Units/Rail
50 Units/Rail
Semiconductor Components Industries, LLC, 1999
February , 2000 – Rev. 3
1 Publication Order Number:
MCR25/D
MCR25D, MCR25M, MCR25N
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
R
R
θJC
θJA
L
1.5
62.5
260 °C
°C/W
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
J
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated V
DRM
or V
, Gate Open) TJ = 25°C
RRM
TJ = 125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage* (ITM = 50 A) V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) I
Gate Trigger V oltage (Continuous dc) (VD = 12 V, RL = 100 Ω) V
Holding Current (VD =12 Vdc, Initiating Current = 200 mA, Gate Open) I
Latching Current (VD = 12 V, IG = 30 mA) I
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = 67% of Rated V
TJ = 125°C)
Critical Rate of Rise of On–State Current
(IPK = 50 A, Pw = 30 µsec, diG/dt = 1 A/µsec, Igt = 50 mA)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
, Exponential Waveform, Gate Open,
DRM
Symbol Min Typ Max Unit
I
DRM
I
RRM
TM
GT
GT
H
L
dv/dt 100 250 — V/µs
di/dt — — 50 A/µs
—
—
— — 1.8 Volts
4.0 12 30 mA
0.5 0.67 1.0 Volts
5.0 13 40 mA
— 35 80 mA
—
—
0.01
2.0
mA
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MCR25D, MCR25M, MCR25N
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
40
35
30
25
20
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
on state
I
at V
RRM
Reverse Avalanche Region
Anode –
RRM
Reverse Blocking Region
(off state)
1.0
0.9
0.8
0.7
0.6
V
TM
I
H
I
at V
DRM
Forward Blocking Region
(off state)
DRM
+ Voltage
, GATE TRIGGER CURRENT (mA)
GT
I
15
10
5
0
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. T ypical Gate Trigger Current versus
Junction T emperature
0.5
0.4
, GATE TRIGGER VOLTAGE (V)
GT
V
0.3
958065
1251105035205–10–25–40
0.2
TJ, JUNCTION TEMPERATURE (°C)
958065
1251105035205–10–25–40
Figure 2. T ypical Gate Trigger Voltage versus
Junction T emperature
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