ON Semiconductor MCR225-8FP, MCR225-10FP Technical data
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MCR225-8FP, MCR225-10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Insulated Package Simplifies Mounting
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MCR225–8FP, Date Code
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ISOLATED SCRs
25 AMPERES RMS
600 thru 800 VOLTS
G
A
K
()
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Peak Repetitive Off–State V oltage
(TJ = –40 to +125°C, Sine Wave,
50 to 60 Hz, Gate Open)
On-State RMS Current (TC = +70°C)
(180° Conduction Angles)
Peak Non–repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TC = +70°C)
Circuit Fusing (t = 8.3 ms) I2t 375 A2s
Forward Peak Gate Power
(TC = +70°C, Pulse Width v 1.0 µs)
Forward Average Gate Power
(TC = +70°C, t = 8.3 ms)
Forward Peak Gate Current
(TC = +70°C, Pulse Width v 1.0 µs)
RMS Isolation Voltage (TA = 25°C,
Relative Humidity p 20%)
Operating Junction Temperature Range T
Storage Temperature Range T
(1) V
and V
DRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
RRM
= 25°C unless otherwise noted)
J
(1)
MCR225–8FP
MCR225–10FP
()
for all types can be applied on a continuous basis. Ratings
V
DRM,
V
RRM
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
V
(ISO)
J
stg
600
800
25 Amps
300 Amps
20 Watts
0.5 Watt
2.0 Amps
1500 Volts
–40 to
+125
–40 to
+150
Volts
°C
°C
1
2
3
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 2
PIN ASSIGNMENT
1
2
3
Cathode
Anode
Gate
ORDERING INFORMATION
Device Package Shipping
MCR225–8FP ISOLATED TO220FP 500/Box
MCR225–10FP ISOLATED TO220FP 500/Box
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 1999
February , 2000 – Rev. 2
1 Publication Order Number:
MCR225FP/D
MCR225–8FP, MCR225–10FP
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
θJC
θCS
θJA
L
1.5 °C/W
2.2 (typ) °C/W
60 °C/W
260 °C
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted.)
C
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated V
DRM
, V
; Gate Open) TJ = 25°C
RRM
TJ = 125°C
ON CHARACTERISTICS
Peak Forward On–State Voltage
(ITM = 50 A)
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(ITM = 25 A, IGT = 40 mAdc)
Turn-Off Time (V
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
= Rated Voltage)
DRM
(1)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated V
(1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.
, Exponential Waveform)
DRM
Symbol Min Typ Max Unit
I
,
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
t
q
dv/dt — 100 — V/µs
—
—
— — 1.8 Volts
— — 40 mA
— 0.8 1.5 Volts
0.2 — — Volts
— 20 40 mA
— 1.5 — µs
—
—
—
—
15
35
10
—
—
2
µA
mA
µs
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2
MCR225–8FP, MCR225–10FP
T
A
I
CA
T
AT
(
C)
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
I
V
I
V
I
130
°
120
URE
110
EMPER
SE
100
MUM
X
90
, M
C
80
DRM
DRM
RRM
RRM
TM
H
0
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
I
T(AV)
Figure 1. Average Current Derating
TYPICAL CHARACTERISTICS
α = CONDUCTION ANGLE
180°
84
, ON-STA TE FORW ARD CURRENT (AMPS)
α
dc90°60°α = 30°
on state
I
at V
RRM
Reverse Avalanche Region
Anode –
201612
RRM
Reverse Blocking Region
(off state)
32
24
α = CONDUCTION ANGLE
16
(AV)
P , AVERAGE POWER (WATTS)
8
0
0
α = 30°
48
I
, AVERAGE ON-ST ATE FORWARD CURRENT (AMPS)
T(AV)
Figure 2. Maximum On–State Power Dissipation
V
TM
I
H
+ Voltage
I
at V
DRM
Forward Blocking Region
(off state)
α
90°
60°
DRM
180°
TJ = 125°C
1612
dc
20
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3
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