Datasheet MCR225-8FP, MCR225-10FP Datasheet (ON Semiconductor)

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MCR225-8FP, MCR225-10FP

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supply crowbar circuits.

• Glass Passivated Junctions with Center Gate Fire for Greater Parameter

Uniformity and Stability

• Small, Rugged, Thermowatt Constructed for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

• 300 A Surge Current Capability

• Insulated Package Simplifies Mounting

• Indicates UL Registered — File #E69369

• Device Marking: Logo, Device Type, e.g., MCR225–8FP, Date Code

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ISOLATED SCRs

25 AMPERES RMS

600 thru 800 VOLTS

G

A

K

()

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Peak Repetitive Off–State V oltage

(TJ = –40 to +125°C, Sine Wave,
50 to 60 Hz, Gate Open)

On-State RMS Current (TC = +70°C)

(180° Conduction Angles)

Peak Non–repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz,

TC = +70°C)
Circuit Fusing (t = 8.3 ms) I2t 375 A2s
Forward Peak Gate Power

(TC = +70°C, Pulse Width v 1.0 µs)
Forward Average Gate Power

(TC = +70°C, t = 8.3 ms)
Forward Peak Gate Current

(TC = +70°C, Pulse Width v 1.0 µs)
RMS Isolation Voltage (TA = 25°C,

Relative Humidity p 20%)
Operating Junction Temperature Range T

Storage Temperature Range T

(1) V

and V

DRM

apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

RRM

= 25°C unless otherwise noted)

J

(1)

MCR225–8FP
MCR225–10FP

()

for all types can be applied on a continuous basis. Ratings

V

DRM,

V

RRM

I

T(RMS)

I

TSM

P

GM

P

G(AV)

I

GM

V

(ISO)

J

stg

600
800

25 Amps

300 Amps

20 Watts

0.5 Watt

2.0 Amps

1500 Volts

–40 to

+125

–40 to

+150

Volts

°C

°C

1

2

3

ISOLATED TO–220 Full Pack

CASE 221C

STYLE 2

PIN ASSIGNMENT

1
2
3

Cathode

Anode

Gate

ORDERING INFORMATION

Device Package Shipping

MCR225–8FP ISOLATED TO220FP 500/Box
MCR225–10FP ISOLATED TO220FP 500/Box

Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999

February , 2000 – Rev. 2

1 Publication Order Number:

MCR225FP/D

MCR225–8FP, MCR225–10FP

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

θJC

θCS

θJA

L

1.5 °C/W

2.2 (typ) °C/W
60 °C/W

260 °C

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VD = Rated V

DRM

, V

; Gate Open) TJ = 25°C

RRM

TJ = 125°C

ON CHARACTERISTICS

Peak Forward On–State Voltage

(ITM = 50 A)

Gate Trigger Current (Continuous dc)

(VAK = 12 Vdc, RL = 100 Ohms)

Gate Trigger Voltage (Continuous dc)

(VAK = 12 Vdc, RL = 100 Ohms)

Gate Non-Trigger Voltage

(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)

Holding Current

(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)

Turn-On Time

(ITM = 25 A, IGT = 40 mAdc)

Turn-Off Time (V

(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)

= Rated Voltage)

DRM

(1)

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off-State Voltage

(Gate Open, VD = Rated V

(1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.

, Exponential Waveform)

DRM

Symbol Min Typ Max Unit

I

,

DRM

I

RRM

V

TM

I

GT

V

GT

V

GD

I

H

t

gt

t

q

dv/dt — 100 — V/µs

—
—

— — 1.8 Volts

— — 40 mA

— 0.8 1.5 Volts

0.2 — — Volts

— 20 40 mA

— 1.5 — µs

—
—

—
—

15
35

10

—
—

2

µA

mA

µs

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2

MCR225–8FP, MCR225–10FP

T

A

I

CA

T

AT

(

C)

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol Parameter

V
I
V
I
V
I

130

°

120

URE

110

EMPER
SE

100

MUM
X

90

, M

C

80

DRM

DRM

RRM

RRM

TM

H

0

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current

I

T(AV)

Figure 1. Average Current Derating

TYPICAL CHARACTERISTICS

α = CONDUCTION ANGLE

180°

84

, ON-STA TE FORW ARD CURRENT (AMPS)

α

dc90°60°α = 30°

on state

I

at V

RRM

Reverse Avalanche Region

Anode –

201612

RRM

Reverse Blocking Region

(off state)

32

24

α = CONDUCTION ANGLE

16

(AV)

P , AVERAGE POWER (WATTS)

8

0

0

α = 30°

48

I

, AVERAGE ON-ST ATE FORWARD CURRENT (AMPS)

T(AV)

Figure 2. Maximum On–State Power Dissipation

V

TM

I

H

+ Voltage

I

at V

DRM

Forward Blocking Region

(off state)

α

90°

60°

DRM

180°

TJ = 125°C

1612

dc

20

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3

100

MCR225–8FP, MCR225–10FP

70
50

30

125°C

20

10

7
5

3

2

1

F

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

0.7

0.5

0.3

0.2

0.1

25°C

300

1 CYCLE

275

250

225

TC = 85°C

200

TSM

I , PEAK SURGE CURRENT (AMP)

175

0

0.4
vF, INSTANTANEOUS VOLT AGE (VOLTS)

1.2 21.6 2.4 2.80.8

1

f = 60 Hz

SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT

2346810

NUMBER OF CYCLES

Figure 3. Maximum Forward V oltage Figure 4. Maximum Non-Repetitive Surge Current

1

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

0.1

r(t), TRANSIENT THERMAL RESIST ANCE(NORMALIZED)

0.2 0.3 0.5 1 2

35

20

t, TIME (ms)

Figure 5. Thermal Response

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Z

= R

θJC(t)

30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k

4

θJC

• r(t)

1.0 k

10 k

MCR225–8FP, MCR225–10FP

2

I

AT

T

I

C

T

(

ALIZ

)

2

)

ED

1.6

NORM

1.2

URREN

0.8

GGER
R

E

0.4

GT

, G

0

–60

VD = 12 V

–40

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. T ypical Gate Trigger Current

versus T emperature

2

1.6

1.2

14012040 1008060020–20

1.6

1.2

0.8

0.4

GT

0

V , GATE TRIGGER VOLTAGE (NORMALIZED

–60

VD = 12 V

–40

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. T ypical Gate Trigger Voltage

versus T emperature

VD = 12 V

14012040 1008060020–20

0.8

0.4

H

I , HOLDING CURRENT (NORMALIZED)

0

–60

TJ, JUNCTION TEMPERATURE (°C)

1008060–40 0 20–20

14012040

Figure 8. Typical Holding Current

versus T emperature

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5

MCR225–8FP, MCR225–10FP

P ACKAGE DIMENSIONS

ISOLATED TO–220 Full Pack

CASE 221C–02

ISSUE C

–Y–

SEATING

–T–

–B–

P

F

C

N

PLANE

S

E

Q

H

123

A

K

Z

L

G

D

3 PL

0.25 (0.010)

J

R

M

M

B

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.

DIM MIN MAX MIN MAX

A 0.680 0.700 17.28 17.78
B 0.388 0.408 9.86 10.36
C 0.175 0.195 4.45 4.95
D 0.025 0.040 0.64 1.01
E 0.340 0.355 8.64 9.01

F 0.140 0.150 3.56 3.81
G 0.100 BSC 2.54 BSC
H 0.110 0.155 2.80 3.93

J 0.018 0.028 0.46 0.71
K 0.500 0.550 12.70 13.97

L 0.045 0.070 1.15 1.77
N 0.049 ––– 1.25 –––
P 0.270 0.290 6.86 7.36
Q 0.480 0.500 12.20 12.70
R 0.090 0.120 2.29 3.04
S 0.105 0.115 2.67 2.92

Z 0.070 0.090 1.78 2.28

STYLE 2:

PIN 1. CATHODE

2. ANODE

3. GATE

MILLIMETERSINCHES

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6

Notes

MCR225–8FP, MCR225–10FP

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7

MCR225–8FP, MCR225–10FP

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MCR225FP/D