ON Semiconductor MCR218-2, MCR218-4, MCR218-6 Technical data

查询MCR218-2供应商

MCR218-2, MCR218-4,
MCR218-6

Preferred Device

Silicon Contr olled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half-wave silicon gate-controlled, solid-state devices are needed.

• Glass-Passivated Junctions

• Blocking Voltage to 400 Volts

• TO-220 Construction — Low Thermal Resistance, High Heat

Dissipation and Durability

• Device Marking: Logo, Device T ype, e.g., MCR218–2, Date Code

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Peak Repetitive Off–State V oltage

(TJ = *40 to 125°C, Gate Open)

On-State RMS Current

(180° Conduction Angles; TC = 70°C)

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)

Circuit Fusing Considerations

(t = 8.3 ms)

Forward Peak Gate Power

(Pulse Width ≤ 1.0 µs, TC = 70°C)

Forward Average Gate Power

(t = 8.3 ms, TC = 70°C)

Forward Peak Gate Current

(Pulse Width ≤ 1.0 µs, TC = 70°C)

Operating Junction Temperature Range T

Storage Temperature Range T

(1) V

and V

DRM

apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

RRM

= 25°C unless otherwise noted)

J

(1)

MCR218–2
MCR218–4
MCR218–6

for all types can be applied on a continuous basis. Ratings

V

DRM,

V

RRM

I

T(RMS)

I

TSM

I2t 26 A2s

P

GM

P

G(AV)

I

GM

J

stg

50
200
400

8.0 A

100 A

5.0 Watts

0.5 Watts

2.0 A

–40 to

+125

–40 to

+150

Volts

°C

°C

http://onsemi.com

SCRs

8 AMPERES RMS

50 thru 400 VOLTS

G

A

1

2

3

TO–220AB

CASE 221A

STYLE 3

PIN ASSIGNMENT

1
2
3
4

Cathode

ORDERING INFORMATION

Device Package Shipping

MCR218–2 TO220AB 500/Box
MCR218–4 TO220AB
MCR218–6 TO220AB

K

4

Anode

Gate

Anode

500/Box
500/Box

 Semiconductor Components Industries, LLC, 1999

March, 2000 – Rev . 2

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

MCR218/D

MCR218–2, MCR218–4, MCR218–6

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

θJC

L

2.0 °C/W

260 °C

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted.)

J

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated V

DRM

or V

, Gate Open) TJ = 25°C

RRM

ON CHARACTERISTICS

Peak Forward On-State Voltage

(ITM = 16 A Peak)

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ohms)

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ohms)

Gate Non–Trigger V oltage

(Rated 12 V , RL = 100 Ohms, TJ = 125°C)

Holding Current

(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)

(1)

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated V

(1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.

, Exponential Waveform, Gate Open, TJ = 125°C)

DRM

TJ = 125°C

Symbol Min Typ Max Unit

I

, I

DRM

RRM

V

TM

I

GT

V

GT

V

GD

I

H

dv/dt — 100 — V/µs

—
—

— 1.5 1.8 Volts

— 10 25 mA

— — 1.5 Volts

0.2 — — Volts

— 16 30 mA

—
—

10

2.0

µA

mA

http://onsemi.com

2

MCR218–2, MCR218–4, MCR218–6

T

,

A

I

ALL

WA

L

A

T

AT

(

)

125

15

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

C

°

URE

115

EMPER

105

SE
E C

95

B
O

85

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current

α

α = CONDUCTION ANGLE

dc

on state

I

at V

RRM

Reverse Avalanche Region

Anode –

RRM

Reverse Blocking Region

(off state)

12

9.0

6.0

(WATTS)

3.0

α = Conduction Angle

α = 30°

V

TM

I

H

I

Forward Blocking Region

(off state)

α

120°

90°

60°

DRM

at V

180°

+ Voltage

DRM

dc

MUM

75

X
M

C

0

α = 30° 90° 120° 180°60°

I

, AVERAGE ON-ST ATE FORWARD CURRENT (AMPS)

T(AV)

Figure 1. Current Derating Figure 2. On–State Power Dissipation

, A VERAGE ON-STATE POWER DISSIPATION

0

(AV)

87654321

0

P

I

, AVG. ON-ST ATE CURRENT (AMPS)

T(AV)

8.07.06.05.04.03.02.01.0

http://onsemi.com

3