ON Semiconductor MCR218-6FP, MCR218-10FP Technical data

查询MCR218-10FP供应商

MCR218-6FP, MCR218-10FP

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supply crowbar circuits.

• Glass Passivated Junctions with Center Gate Fire for Greater

Parameter Uniformity and Stability

• Small, Rugged, Thermowatt Constructed for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

• 80 A Surge Current Capability

• Insulated Package Simplifies Mounting

• Indicates UL Registered — File #E69369

• Device Marking: Logo, Device Type, e.g., MCR218–6, Date Code

http://onsemi.com

ISOLATED SCRs

8 AMPERES RMS

400 thru 800 VOLTS

G

A

K

()

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Peak Repetitive Off–State V oltage

(TJ = –40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open)

On-State RMS Current (TC = +70°C)

(180° Conduction Angles)

Peak Nonrepetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz,

TJ = 125°C)
Circuit Fusing (t = 8.3 ms) I2t 26 A2s
Forward Peak Gate Power

(TC = +70°C, Pulse Width v 1.0 µs)
Forward Average Gate Power

(TC = +70°C, t = 8.3 ms)
Forward Peak Gate Current

(TC = +70°C, Pulse Width v 1.0 µs)
RMS Isolation Voltage (TA = 25°C,

Relative Humidity p 20%)
Operating Junction Temperature T

Storage Temperature Range T

(1) V

(2) The case temperature reference point for all TC measurements is a point on

and V

DRM

apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

the center lead of the package as close as possible to the plastic body.

RRM

= 25°C unless otherwise noted)

J

(1)

MCR218–6FP
MCR218–10FP

()

for all types can be applied on a continuous basis. Ratings

(2)

V

DRM,

V

RRM

I

T(RMS)

I

TSM

P

GM

P

G(AV)

I

GM

V

(ISO)

J

stg

Volts

400
800

8.0 Amps

100 Amps

5.0 Watts

0.5 Watt

2.0 Amps

1500 Volts

–40 to

+125

–40 to

+150

°C

°C

1

2

3

ISOLATED TO–220 Full Pack

CASE 221C

STYLE 2

PIN ASSIGNMENT

1
2
3

Cathode

Anode

Gate

ORDERING INFORMATION

Device Package Shipping

MCR218–6FP ISOLATED TO220FP 500/Box
MCR218–10FP ISOLATED TO220FP 500/Box

Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999

February , 2000 – Rev. 2

1 Publication Order Number:

MCR218FP/D

MCR218–6FP, MCR218–10FP

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

θJC

θCS

θJA

L

2 °C/W

2.2 (typ) °C/W
60 °C/W

260 °C

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VD = Rated V

, Gate Open) TJ = 25°C

DRM

TJ = 125°C

ON CHARACTERISTICS

DRM

(1)

,

TJ = 125°C

Peak Forward On–State Voltage

(ITM = 16 A Peak)

Gate Trigger Current (Continuous dc)

(VAK = 12 Vdc, RL = 100 Ohms)

Gate Trigger Voltage (Continuous dc)

(VAK = 12 Vdc, RL = 100 Ohms)

Gate Non-Trigger Voltage

(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)

Holding Current

(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)

Turn-On Time

(ITM = 8 A, IGT = 40 mAdc)

Turn-Off Time (VD = Rated V

ITM = 8 A, IR = 8 A) TJ = 25°C

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off-State Voltage

(Gate Open, VD = Rated V

(1) Pulse Test: Pulse Width = 1 ms, Duty Cycle p 2%.

, Exponential Waveform)

DRM

Symbol

I

DRM,

I

RRM

V

TM

I

GT

V

GT

V

GD

I

H

t

gt

t

q

dv/dt — 100 — V/µs

Min Typ Max Unit

—
—

— 1 1.8 Volts

— 10 25 mA

— — 1.5 Volts

0.2 — — Volts

— 16 30 mA

— 1.5 — µs

—
—

—
—

15
35

10

2

—
—

µA

mA

µs

http://onsemi.com

2

MCR218–6FP, MCR218–10FP

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

°

125

115

105

95

85

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current

a

α = CONDUCTION ANGLE

I

at V

RRM

Reverse Avalanche Region

Anode –

dc

RRM

Reverse Blocking Region

(off state)

15

12

9

(WATTS)

6

3

on state

I

H

Forward Blocking Region

a

α = CONDUCTION ANGLE

60°

α = 30°

V

TM

(off state)

90°

120°

I

DRM

at V

180°

+ Voltage

DRM

dc

75

C

T , MAXIMUM ALLOW ABLE CASE TEMPERATURE ( C)

α = 30° 180°

I

, AVERAGE ON-ST ATE FORWARD CURRENT (AMPS)

T(AV)

90°60° 120°

Figure 1. Current Derating

(AV)

0

P , AVERAGE ON-STATE POWER DISSIPATION

876543210

0

I

, AVG. ON-ST ATE CURRENT (AMPS)

T(AV)

87654321

Figure 2. On-State Power Dissipation

http://onsemi.com

3

100

MCR218–6FP, MCR218–10FP

70
50

30

20

10

0.7

F

i , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMP)

0.5

0.3

0.2

0.1

TJ = 25°C

125°C

7
5

3

2

80

1

0.4

1.2
vF, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

2.8 4.43.6 5.2 62

TSM

I , PEAK SURGE CURRENT (AMP)

75

70

65

TC = 85°C

f = 60 Hz

60

SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT

55

1

2346810

NUMBER OF CYCLES

1 CYCLE

Figure 3. Maximum On-State Characteristics Figure 4. Maximum Non-Repetitive Surge Current

1

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

0.1

r(t), TRANSIENT THERMAL RESIST ANCE (NORMALIZED)

0.2 0.3 0.5 1 2

35

20

30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k

t, TIME (ms)

Z

θJC(t)

= R

θJC

• r(t)

Figure 5. Thermal Response

http://onsemi.com

4

MCR218–6FP, MCR218–10FP

2

1.6

1.2

0.8

0.4

GT

0

I , GATE TRIGGER CURRENT (NORMALIZED)

–60

–40

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. T ypical Gate Trigger Current versus

T emperature

2

1.6

1.2

VD = 12 V

14012040 1008060020–20

2

1.6

1.2

0.8

0.4

GT

0

V , GATE TRIGGER VOLTAGE (NORMALIZED)

–60

–40

Figure 7. T ypical Gate Trigger Voltage versus

VD = 12 V

VD = 12 V

14012040 1008060020–20

TJ, JUNCTION TEMPERATURE (°C)

T emperature

0.8

0.4

H

I , HOLDING CURRENT (NORMALIZED)

0

–60

TJ, JUNCTION TEMPERATURE (°C)

1008060–40 0 20–20

Figure 8. T ypical Holding Current versus Temperature

14012040

http://onsemi.com

5

MCR218–6FP, MCR218–10FP

P ACKAGE DIMENSIONS

ISOLATED TO–220 Full Pack

CASE 221C–02

ISSUE C

–Y–

SEATING

–T–

–B–

P

F

C

N

PLANE

S

E

Q

H

123

A

K

Z

L

G

D

3 PL

0.25 (0.010)

J

R

M

M

B

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.

DIM MIN MAX MIN MAX

A 0.680 0.700 17.28 17.78
B 0.388 0.408 9.86 10.36
C 0.175 0.195 4.45 4.95
D 0.025 0.040 0.64 1.01

E 0.340 0.355 8.64 9.01

F 0.140 0.150 3.56 3.81
G 0.100 BSC 2.54 BSC
H 0.110 0.155 2.80 3.93

J 0.018 0.028 0.46 0.71
K 0.500 0.550 12.70 13.97

L 0.045 0.070 1.15 1.77
N 0.049 ––– 1.25 –––

P 0.270 0.290 6.86 7.36
Q 0.480 0.500 12.20 12.70
R 0.090 0.120 2.29 3.04

S 0.105 0.115 2.67 2.92

Z 0.070 0.090 1.78 2.28

STYLE 2:

PIN 1. CATHODE

2. ANODE

3. GATE

MILLIMETERSINCHES

http://onsemi.com

6

Notes

MCR218–6FP, MCR218–10FP

http://onsemi.com

7

MCR218–6FP, MCR218–10FP

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability ,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer .

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: [phone] or 800–344–3860 Toll Free USA/Canada
Fax: [phone] or 800–344–3867 Toll Free USA/Canada
Email: [e-mail]

Fax Response Line: 303–675–2167 or 800–344–3810 T oll Free USA/Canada

N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support

German Phone: [phone] (M–F 1:00pm to 5:00pm Munich Time)

Email: ONlit–[e-mail]

French Phone: [phone] (M–F 1:00pm to 5:00pm Toulouse Time)

Email: ONlit–[e-mail]

English Phone: [phone] (M–F 12:00pm to 5:00pm UK Time)

Email: [e-mail]

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

*Available from Germany, France, Italy, England, Ireland

CENTRAL/SOUTH AMERICA:

Spanish Phone: [phone] (Mon–Fri 8:00am to 5:00pm MST)

Email: ONlit–[e-mail]

ASIA/PACIFIC : LDC for ON Semiconductor – Asia Support

Phone: [phone] (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)

T oll Free from Hong Kong & Singapore:

001–800–4422–3781

Email: ONlit–[e-mail]

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, T okyo, Japan 141–8549

Phone: [phone]
Email: [e-mail]

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local
Sales Representative.

http://onsemi.com

8

MCR218FP/D