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MCR218-6FP, MCR218-10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 80 A Surge Current Capability
• Insulated Package Simplifies Mounting
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MCR218–6, Date Code
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ISOLATED SCRs
8 AMPERES RMS
400 thru 800 VOLTS
G
A
K
()
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Peak Repetitive Off–State V oltage
(TJ = –40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open)
On-State RMS Current (TC = +70°C)
(180° Conduction Angles)
Peak Nonrepetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing (t = 8.3 ms) I2t 26 A2s
Forward Peak Gate Power
(TC = +70°C, Pulse Width v 1.0 µs)
Forward Average Gate Power
(TC = +70°C, t = 8.3 ms)
Forward Peak Gate Current
(TC = +70°C, Pulse Width v 1.0 µs)
RMS Isolation Voltage (TA = 25°C,
Relative Humidity p 20%)
Operating Junction Temperature T
Storage Temperature Range T
(1) V
(2) The case temperature reference point for all TC measurements is a point on
and V
DRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
the center lead of the package as close as possible to the plastic body.
RRM
= 25°C unless otherwise noted)
J
(1)
MCR218–6FP
MCR218–10FP
()
for all types can be applied on a continuous basis. Ratings
(2)
V
DRM,
V
RRM
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
V
(ISO)
J
stg
Volts
400
800
8.0 Amps
100 Amps
5.0 Watts
0.5 Watt
2.0 Amps
1500 Volts
–40 to
+125
–40 to
+150
°C
°C
1
2
3
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 2
PIN ASSIGNMENT
1
2
3
Cathode
Anode
Gate
ORDERING INFORMATION
Device Package Shipping
MCR218–6FP ISOLATED TO220FP 500/Box
MCR218–10FP ISOLATED TO220FP 500/Box
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 1999
February , 2000 – Rev. 2
1 Publication Order Number:
MCR218FP/D
MCR218–6FP, MCR218–10FP
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
θJC
θCS
θJA
L
2 °C/W
2.2 (typ) °C/W
60 °C/W
260 °C
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted.)
C
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated V
, Gate Open) TJ = 25°C
DRM
TJ = 125°C
ON CHARACTERISTICS
DRM
(1)
,
TJ = 125°C
Peak Forward On–State Voltage
(ITM = 16 A Peak)
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(ITM = 8 A, IGT = 40 mAdc)
Turn-Off Time (VD = Rated V
ITM = 8 A, IR = 8 A) TJ = 25°C
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated V
(1) Pulse Test: Pulse Width = 1 ms, Duty Cycle p 2%.
, Exponential Waveform)
DRM
Symbol
I
DRM,
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
t
q
dv/dt — 100 — V/µs
Min Typ Max Unit
—
—
— 1 1.8 Volts
— 10 25 mA
— — 1.5 Volts
0.2 — — Volts
— 16 30 mA
— 1.5 — µs
—
—
—
—
15
35
10
2
—
—
µA
mA
µs
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2
MCR218–6FP, MCR218–10FP
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
°
125
115
105
95
85
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
a
α = CONDUCTION ANGLE
I
at V
RRM
Reverse Avalanche Region
Anode –
dc
RRM
Reverse Blocking Region
(off state)
15
12
9
(WATTS)
6
3
on state
I
H
Forward Blocking Region
a
α = CONDUCTION ANGLE
60°
α = 30°
V
TM
(off state)
90°
120°
I
DRM
at V
180°
+ Voltage
DRM
dc
75
C
T , MAXIMUM ALLOW ABLE CASE TEMPERATURE ( C)
α = 30° 180°
I
, AVERAGE ON-ST ATE FORWARD CURRENT (AMPS)
T(AV)
90°60° 120°
Figure 1. Current Derating
(AV)
0
P , AVERAGE ON-STATE POWER DISSIPATION
876543210
0
I
, AVG. ON-ST ATE CURRENT (AMPS)
T(AV)
87654321
Figure 2. On-State Power Dissipation
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