Datasheet MCR16N Datasheet (ON Semiconductor)

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MCR16N

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.

• Blocking Voltage to 800 Volts

• On–State Current Rating of 16 Amperes RMS

• High Surge Current Capability — 160 Amperes

• Rugged Economical TO–220AB Package

• Glass Passivated Junctions for Reliability and Uniformity

• Minimum and Maximum Values of I

Ease of Design

• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C

• Device Marking: Logo, Device T ype, e.g., MCR16N, Date Code

, VGT, and IH Specified for

GT

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SCRs

16 AMPERES RMS

800 VOLT

G

A

K

MAXIMUM RATINGS (T

Rating

Peak Repetitive Off–State V oltage

(TJ = –40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open) MCR16N

On-State RMS Current

(180° Conduction Angles; TC = 80°C)

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)

Circuit Fusing Consideration

(t = 8.3 ms)

Forward Peak Gate Power

(Pulse Width ≤ 1.0 µs, TC = 80°C)

Forward Average Gate Power

(t = 8.3 ms, TC = 80°C)

Forward Peak Gate Current

(Pulse Width ≤ 1.0 µs, TC = 80°C)

Operating Junction Temperature Range T

Storage Temperature Range T

(1) V

and V

DRM

apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.

RRM

= 25°C unless otherwise noted)

J

Symbol Value Unit

(1)

for all types can be applied on a continuous basis. Ratings

V

DRM,

V

RRM

I

T(RMS)

I

TSM

I2t 106 A2sec

P

GM

P

G(AV)

I

GM

J

stg

800

16 A

160 A

5.0 Watts

0.5 Watts

2.0 A

–40 to

+125

–40 to

+150

Volts

°C

°C

4

1

2

3

TO–220AB

CASE 221A

STYLE 3

PIN ASSIGNMENT

1
2
3
4

Cathode

Anode

Gate

Anode

ORDERING INFORMATION

Device Package Shipping

MCR16N TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999

February , 2000 – Rev. 2

1 Publication Order Number:

MCR16/D

MCR16N

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

ELECTRICAL CHARACTERISTICS (T

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current TJ = 25°C

(VAK = Rated V

ON CHARACTERISTICS

Peak Forward On–State Voltage* (ITM = 32 A) V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) I
Gate Trigger V oltage (Continuous dc) (VD = 12 V, RL = 100 Ω) V
Hold Current (Anode Voltage = 12 V, Initiating Current = 200 mA,

Gate Open)

Latch Current

(VD = 12 V, Ig = 200 mA)

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off–State Voltage

(VD = Rated V

Critical Rate of Rise of On–State Current

(IPK = 50 A, Pw = 30 µs, diG/dt = 1 A/µsec, Igt = 50 mA)

*Indicates Pulse Test: Pulse Width v2.0 ms, Duty Cycle v2%.

— Junction to Ambient

= 25°C unless otherwise noted)

J

Characteristic

or V

DRM

, Exponential Waveform, Gate Open, TJ = 125°C)

DRM

, Gate Open) TJ = 125°C

RRM

Symbol Min Typ Max Unit

I

,

DRM

I

RRM

TM

GT

GT

I

H

I

L

dv/dt 100 300 — V/µs

di/dt — — 50 A/µs

R

θJC

R

θJA

L

—
—

— — 1.7 Volts

2.0 10 20 mA

0.5 0.65 1.0 Volts

4.0 25 40 mA

— 30 60 mA

1.5

62.5
260 °C

—
—

0.01

2.0

°C/W

mA

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2

MCR16N

T

130

,

AS

T

M

RAT

R

(

)

32

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol Parameter

°

C
E

U

PE
E
E

C

C

V
I

DRM

V
I

RRM

V
I

H

120

110

100

90

80

DRM

RRM

TM

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current

28410120 6 14 16

I

T(RMS)

α

α = CONDUCTION ANGLE

α = 30°

, ITRMS ON–STATE CURRENT (AMPS)

90°

180°60°

I

at V

RRM

Reverse Avalanche Region

Anode –

dc

RRM

Reverse Blocking Region

(off state)

24

α = CONDUCTION ANGLE

16

8

, A VERAGE POWER DISSIPATION (WATTS)

(AV)

0

P

V

TM

on state

I

H

I

DRM

Forward Blocking Region

(off state)

α

60°

α = 30°

68 14016

4102

I

, AVERAGE ON–STATE CURRENT (AMPS)

T(AV)

at V

90°

+ Voltage

DRM

180°

dc

12

Figure 1. Typical RMS Current Derating

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Figure 2. On State Power Dissipation

3

100

1

I

,

AT

HI

RR

T

(mA)

10

1

T

I , INSTANTANEOUS ON–STATE CURRENT (AMPS)

Typical @ TJ = 25°C

Maximum @ TJ = 125°C

Maximum @ TJ = 25°C

MCR16N

0.1

(t)

R TRANSIENT THERMAL R (NORMALIZED)

0.01

0.1

Figure 4. Transient Thermal Response

100

Z

= R

q

JC(t)

1 10 100 1000

t, TIME (ms)

q

JC(t)

⋅ r(t)

1⋅10

4

0.1

100

EN

10

NG CU
C

L

L

0.5

0.9

VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

1.3 1.7 2.1 2.5

Figure 3. T ypical On–State Characteristics

H

I , HOLDING CURRENT (mA)

GATE TRIGGER CURRENT (mA)

10

1

50–40 35–25 –10 5 20 65 1259580 110

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. T ypical Holding Current versus

Junction T emperature

30

25

20

15

10

5

1

–10

TJ, JUNCTION TEMPERATURE (°C)

505356580–40 20–25 95 110 125

Figure 6. T ypical Latching Current versus

Junction T emperature

0

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4

50–40

35–25 –10 5 20

TJ, JUNCTION TEMPERATURE (°C)

65 125

9580 110

Figure 7. T ypical Gate Trigger Current versus

Junction T emperature

MCR16N

V

1.0

,

AT

TRI

R

V

TA

(V

TS)

160

OL
GE

OL

GGE
E

G

GT

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2
–40

–25 –10

TJ, JUNCTION TEMPERATURE (°C)

50355 20 65 1259580 110

Figure 8. T ypical Gate Trigger Voltage versus

Junction T emperature

, PEAK SURGE CURRENT (AMP)I

TSM

150

140

130

120

110

TJ = 125°C f = 60 Hz

100

90

1 Cycle

483

NUMBER OF CYCLES

6

5721

Figure 9. Maximum Non–Repetitive

Surge Current

910

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MCR16N

P ACKAGE DIMENSIONS

TO–220AB

CASE 221A–09

ISSUE Z

SEATING

–T–

PLANE

T

4

Q

123

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

STYLE 3:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

MILLIMETERSINCHES

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Notes

MCR16N

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7

MCR16N

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MCR16/D