ON Semiconductor MCR12LD, MCR12LM, MCR12LN Technical data
查询MCR12LD供应商
MCR12LD, MCR12LM,
MCR12LN
Preferred Device
Silicon Contr olled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.
• Blocking Voltage to 800 Volts
• On–State Current Rating of 12 Amperes RMS at 80°C
• High Surge Current Capability — 100 Amperes
• Rugged, Economical TO–220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C
• Device Marking: Logo, Device T ype, e.g., MCR12LD, Date Code
http://onsemi.com
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MAXIMUM RATINGS (T
Rating
Peak Repetitive Off–State V oltage
(TJ = –40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open) MCR12LD
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range T
Storage Temperature Range T
(1) V
and V
DRM
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
RRM
= 25°C unless otherwise noted)
J
Symbol Value Unit
(1)
MCR12LM
MCR12LN
for all types can be applied on a continuous basis. Ratings
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I2t 41 A2sec
P
GM
P
G(AV)
I
GM
J
stg
400
600
800
12 A
100 A
5.0 Watts
0.5 Watt
2.0 A
–40 to 125 °C
–40 to 150 °C
Volts
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1
2
3
4
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device Package Shipping
MCR12LD TO220AB 50 Units/Rail
MCR12LM TO220AB
MCR12LN TO220AB
50 Units/Rail
50 Units/Rail
Semiconductor Components Industries, LLC, 1999
February , 2000 – Rev. 0
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MCR12L/D
MCR12LD, MCR12LM, MCR12LN
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current TJ = 25°C
(VD = Rated V
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 24 A) V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) I
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) I
Latch Current (VD = 12 V, Ig = 20 mA) I
Gate Trigger V oltage (Continuous dc) (VD = 12 V, RL = 100 Ω) V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated V
Critical Rate of Rise of On–State Current
IPK = 50 A; Pw = 40 µsec; diG/dt = 1 A/µsec, Igt = 50 mA
*Indicates Pulse Test: Pulse Width v1.0 ms, Duty Cycle v2%.
— Junction to Ambient
= 25°C unless otherwise noted)
J
Characteristic
and V
DRM
, Exponential Waveform, Gate Open, TJ = 125°C)
DRM
; Gate Open) TJ = 125°C
RRM
Symbol Min Typ Max Unit
I
,
DRM
I
RRM
TM
GT
H
L
GT
dv/dt 100 250 — V/µs
di/dt — — 50 A/µs
R
θJC
R
θJA
L
—
—
— — 2.2 Volts
2.0 4.0 8.0 mA
4.0 10 20 mA
6.0 12 30 mA
0.5 0.65 0.8 Volts
2.2
62.5
260 °C
—
—
0.01
2.0
°C/W
mA
http://onsemi.com
2
MCR12LD, MCR12LM, MCR12LN
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
10
9
8
7
6
5
4
3
2
GATE TRIGGER CURRENT (mA)
1
0
–40 –25 –10 5.0 20 35 125
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
TJ, JUNCTION TEMPERATURE (°C)
I
at V
RRM
Reverse Avalanche Region
Anode –
11050 65 80 95
RRM
Reverse Blocking Region
(off state)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
GT
V , GATE TRIGGER VOLTAGE (VOLTS)
0.2
V
TM
on state
I
H
Forward Blocking Region
TJ, JUNCTION TEMPERATURE (°C)
I
DRM
(off state)
at V
+ Voltage
DRM
11095806550355.0–40 –10–25 20
125
100
H
I , HOLDING CURRENT (mA)
Figure 1. T ypical Gate Trigger Current
versus Junction T emperature
10
1.0
–40
–25 –10 5.0 20 35 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Holding Current
versus Junction T emperature
Figure 2. T ypical Gate Trigger Voltage
versus Junction T emperature
100
10
, LATCHING CURRENT (mA)
L
I
11050 65 80 95
1.0
–40
–25 –10 5.0 20 35 125
TJ, JUNCTION TEMPERATURE (°C)
11050 65 80 95
Figure 4. T ypical Latching Current
versus Junction T emperature
http://onsemi.com
3
Loading...