Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave silicon gate–controlled devices are needed.
• Blocking Voltage to 800 Volts
• On–State Current Rating of 12 Amperes RMS at 80°C
• High Surge Current Capability — 100 Amperes
• Rugged, Economical TO220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum at 12 5°C
• Device Marking: Logo, Device Type, e.g., MCR12D, Date Code
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SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MAXIMUM RATINGS (T
Rating
Peak Repetitive Off–State V oltage
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz,
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature RangeT
Storage Temperature RangeT
(1) V
DRM
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
and V
Gate Open)
RRM
= 25°C unless otherwise noted)
J
SymbolValueUnit
(1)
MCR12D
MCR12M
MCR12N
for all types can be applied on a continuous basis. Ratings
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
12312
I
, RMS ON–STATE CURRENT (AMPS)
T(RMS)
30°
60°
45
67
V
TM
on state
I
I
at V
RRM
Reverse Avalanche Region
Anode –
dc
180°90°
80
RRM
Reverse Blocking Region
(off state)
20
18
16
14
12
10
8
6
4
, A VERAGE POWER DISSIPATION (WATTS)
2
(AV)
0
P
I
, AVERAGE ON–STATE CURRENT (AMPS)
T(AV)
H
Forward Blocking Region
(off state)
90°
30°
380
5
4
671291011
I
DRM
at V
+ Voltage
DRM
180°
910
dc
12
11
Figure 1. Typical RMS Current DeratingFigure 2. On–State Power Dissipation
100
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 125°C
10
1
, INSTANTANEOUS ON–STATE CURRENT (AMPS)
0.1
T
I
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
1.02.0205080125
1.5
Figure 3. T ypical On–State CharacteristicsFigure 4. Typical Gate Trigger Current versus
2.5
20
18
16
14
12
10
8
6
4
GATE TRIGGER CURRENT (mA)
2
0
3.00.5
–25
5356595
–10–40
TJ, JUNCTION TEMPERATURE (°C)
110
Junction T emperature
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3
MCR12D, MCR12M, MCR12N
100
, HOLDING CURRENT (mA)I
H
10
1
–10
–2520–40
TJ, JUNCTION TEMPERATURE (°C)
35
5011065512535 50
Figure 5. T ypical Holding Current versus
Junction T emperature
100
80
95
125
, GATE TRIGGER VOLTAGE (VOLTS)
GT
V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
–109580
–2565–40
TJ, JUNCTION TEMPERATURE (°C)
205
Figure 6. T ypical Gate Trigger Voltage versus
Junction T emperature
110
, LATCHING CURRENT (mA)
L
I
10
1
–255205095
–103580
TJ, JUNCTION TEMPERATURE (°C)
65125–40
Figure 7. T ypical Latching Current versus
Junction T emperature
110
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4
MCR12D, MCR12M, MCR12N
P ACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE Z
SEATING
–T–
PLANE
T
4
Q
123
A
U
C
S
H
K
Z
L
V
R
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MINMAXMINMAX
A 0.570 0.620 14.48 15.75
B 0.380 0.4059.66 10.28
C 0.160 0.1904.074.82
D 0.025 0.0350.640.88
F0.142 0.1473.613.73
G 0.095 0.1052.422.66
H0.110 0.1552.803.93
J0.018 0.0250.460.64
K 0.500 0.562 12.70 14.27
L0.045 0.0601.151.52
N 0.190 0.2104.835.33
Q 0.100 0.1202.543.04
R 0.0800.1102.042.79
S0.045 0.0551.151.39
T0.235 0.2555.976.47
U 0.000 0.0500.001.27
V0.045–––1.15–––
Z––– 0.080–––2.04
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
MILLIMETERSINCHES
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5
Notes
MCR12D, MCR12M, MCR12N
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6
Notes
MCR12D, MCR12M, MCR12N
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7
MCR12D, MCR12M, MCR12N
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MCR12/D
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