ON Semiconductor MCR12D, MCR12M, MCR12N Technical data

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MCR12D, MCR12M, MCR12N

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave silicon gate–controlled devices are needed.

• Blocking Voltage to 800 Volts

• On–State Current Rating of 12 Amperes RMS at 80°C

• High Surge Current Capability — 100 Amperes

• Rugged, Economical TO220AB Package

• Glass Passivated Junctions for Reliability and Uniformity

• Minimum and Maximum Values of IGT, VGT an IH Specified for

Ease of Design

• High Immunity to dv/dt — 100 V/µsec Minimum at 12 5°C

• Device Marking: Logo, Device Type, e.g., MCR12D, Date Code

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SCRs

12 AMPERES RMS

400 thru 800 VOLTS

G

A

K

MAXIMUM RATINGS (T

Rating

Peak Repetitive Off–State V oltage

(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz,

On-State RMS Current

(180° Conduction Angles; TC = 80°C)

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)

Circuit Fusing Consideration

(t = 8.33 ms)

Forward Peak Gate Power

(Pulse Width ≤ 1.0 µs, TC = 80°C)

Forward Average Gate Power

(t = 8.3 ms, TC = 80°C)

Forward Peak Gate Current

(Pulse Width ≤ 1.0 µs, TC = 80°C)

Operating Junction Temperature Range T

Storage Temperature Range T

(1) V

DRM

apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.

and V

Gate Open)

RRM

= 25°C unless otherwise noted)

J

Symbol Value Unit

(1)

MCR12D
MCR12M
MCR12N

for all types can be applied on a continuous basis. Ratings

V

DRM,

V

RRM

400
600
800

I

T(RMS)

I

TSM

I2t 41 A2sec

P

GM

P

G(AV)

I

GM

J

stg

12 A

100 A

5.0 Watts

0.5 Watts

2.0 A

–40 to

+125

–40 to

+150

Volts

°C

°C

4

1

2

3

TO–220AB

CASE 221A

STYLE 3

PIN ASSIGNMENT

1
2
3
4

Cathode

Anode

Gate

Anode

ORDERING INFORMATION

Device Package Shipping

MCR12D TO220AB 50 Units/Rail
MCR12M TO220AB
MCR12N TO220AB

Preferred devices are recommended choices for future use
and best overall value.

50 Units/Rail
50 Units/Rail

 Semiconductor Components Industries, LLC, 1999

December, 1999 – Rev. 2

1 Publication Order Number:

MCR12/D

MCR12D, MCR12M, MCR12N

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance — Junction to Case

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

ELECTRICAL CHARACTERISTICS (T

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VD = Rated V

ON CHARACTERISTICS

Peak Forward On–State Voltage* (ITM = 24 A) V
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω) I
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) I
Latch Current (VD = 12 V, IG = 20 mA) I
Gate Trigger V oltage (Continuous dc) (VD = 12 V; RL =100 Ω) V

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off–State Voltage

(VD = Rated V

Repetitive Critical Rate of Rise of On–State Current

IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA

*Indicates Pulse Test: Pulse Width v2.0 ms, Duty Cycle v2%.

— Junction to Ambient

= 25°C unless otherwise noted)

J

Characteristic

and V

DRM

, Exponential Waveform, Gate Open, TJ = 125°C)

DRM

; Gate Open) TJ = 25°C

RRM

TJ = 125°C

Symbol Min Typ Max Unit

I

,

DRM

I

RRM

TM

GT

H

L

GT

dv/dt 100 250 — V/µs

di/dt — — 50 A/µs

R

θJC

R

θJA

L

—
—

— — 2.2 Volts

2.0 8.0 20 mA

4.0 20 40 mA

6.0 25 60 mA

0.5 0.65 1.0 Volts

2.2

62.5
260 °C

—
—

0.01

2.0

°C/W

mA

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MCR12D, MCR12M, MCR12N

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

125

120

°

115

110

105

100

, CASE TEMPERATURE ( C)

C

T

95
90

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current

123 12

I

, RMS ON–STATE CURRENT (AMPS)

T(RMS)

30°

60°

45

67

V

TM

on state

I

I

at V

RRM

Reverse Avalanche Region

Anode –

dc

180°90°

80

RRM

Reverse Blocking Region

(off state)

20
18
16
14
12
10

8
6
4

, A VERAGE POWER DISSIPATION (WATTS)

2

(AV)

0

P

I

, AVERAGE ON–STATE CURRENT (AMPS)

T(AV)

H

Forward Blocking Region

(off state)

90°

30°

380

5

4

671291011

I

DRM

at V

+ Voltage

DRM

180°

910

dc

12

11

Figure 1. Typical RMS Current Derating Figure 2. On–State Power Dissipation

100

MAXIMUM @ TJ = 25°C

MAXIMUM @ TJ = 125°C

10

1

, INSTANTANEOUS ON–STATE CURRENT (AMPS)

0.1

T

I

VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

1.0 2.0 20 50 80 125

1.5

Figure 3. T ypical On–State Characteristics Figure 4. Typical Gate Trigger Current versus

2.5

20
18
16
14
12
10

8
6

4

GATE TRIGGER CURRENT (mA)

2
0

3.00.5

–25

5356595

–10–40

TJ, JUNCTION TEMPERATURE (°C)

110

Junction T emperature

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3

MCR12D, MCR12M, MCR12N

100

, HOLDING CURRENT (mA)I

H

10

1

–10

–25 20–40

TJ, JUNCTION TEMPERATURE (°C)

35

50 11065 5 12535 50

Figure 5. T ypical Holding Current versus

Junction T emperature

100

80

95

125

, GATE TRIGGER VOLTAGE (VOLTS)

GT

V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2
–10 9580

–25 65–40

TJ, JUNCTION TEMPERATURE (°C)

205

Figure 6. T ypical Gate Trigger Voltage versus

Junction T emperature

110

, LATCHING CURRENT (mA)

L

I

10

1

–25 5 20 50 95

–10 35 80

TJ, JUNCTION TEMPERATURE (°C)

65 125–40

Figure 7. T ypical Latching Current versus

Junction T emperature

110

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4

MCR12D, MCR12M, MCR12N

P ACKAGE DIMENSIONS

TO–220AB

CASE 221A–09

ISSUE Z

SEATING

–T–

PLANE

T

4

Q

123

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79

S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27

V 0.045 ––– 1.15 –––

Z ––– 0.080 ––– 2.04

STYLE 3:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

MILLIMETERSINCHES

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Notes

MCR12D, MCR12M, MCR12N

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6

Notes

MCR12D, MCR12M, MCR12N

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MCR12D, MCR12M, MCR12N

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MCR12/D