ON Semiconductor MCR08B, MCR08M Technical data
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MCR08B, MCR08M
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing.
• Sensitive Gate Trigger Current
• Blocking Voltage to 600 Volts
• Glass Passivated Surface for Reliability and Uniformity
• Surface Mount Package
• Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and
Date Code
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SCRs
0.8 AMPERES RMS
200 thru 600 VOLTS
G
A
K
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Peak Repetitive Off–State V oltage
(Sine Wave, RGK = 1000 Ω,
TJ = 25 to 110°C)
On-State Current RMS
(All Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Considerations
(t = 8.3 ms)
Forward Peak Gate Power
(TC = 80°C, t = 1.0 µs)
Average Gate Power
(TC = 80°C, t = 8.3 ms)
Operating Junction Temperature Range T
Storage Temperature Range T
(1) V
and V
DRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
RRM
= 25°C unless otherwise noted)
J
(1)
MCR08BT1
MCR08MT1
for all types can be applied on a continuous basis. Ratings
V
DRM,
V
RRM
200
600
I
T(RMS)
I
TSM
I2t 0.4 A2s
P
GM
P
G(AV)
J
stg
0.8 Amps
8.0 Amps
0.1 Watts
0.01 Watts
–40 to
+110
–40 to
+150
Volts
°C
°C
4
1
2
3
SOT–223
CASE 318E
STYLE 10
PIN ASSIGNMENT
1
2
3
4
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device Package Shipping
MCR08BT1 SOT223 16mm Tape and Reel
MCR08MT1 SOT223
Preferred devices are recommended choices for future use
and best overall value.
(1K/Reel)
16mm Tape and Reel
(1K/Reel)
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1 Publication Order Number:
MCR08BT1/D
MCR08B, MCR08M
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy
Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) T
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated V
DRM
or V
, RGK = 1000 Ω)T
RRM
ON CHARACTERISTICS
Peak Forward On-State Voltage
(IT = 1.0 A Peak)
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ω)
Holding Current
(VAK = 12 Vdc, Initiating Current = 20 mA)
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ω)
(3)
(1)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off State V oltage
(Vpk = Rated V
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) RGK = 1000 Ω is included in measurement.
(3) RGK is not included in measurement.
, TC = 110°C, RGK = 1000 Ω, Exponential Method)
DRM
= 25°C unless otherwise noted)
C
(2)
(3)
(3)
= 25°C
J
TJ = 110°C
Symbol Min Typ Max Unit
I
DRM
R
θJA
R
θJT
L
, I
RRM
V
TM
I
GT
I
H
V
GT
dv/dt 10 — — V/µs
—
—
— — 1.7 Volts
— — 200 µA
— — 5.0 mA
— — 0.8 Volts
156 °C/W
25 °C/W
260 °C
—
—
10
200
µA
µA
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MCR08B, MCR08M
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
0.079
2.0
0.079
2.0
0.984
25.0
0.059
1.5
0.091
2.3
0.15
3.8
0.059
1.5
0.091
2.3
0.059
1.5
0.244
6.2
inches
ǒ
mm
V
TM
on state
I
I
at V
RRM
Reverse Avalanche Region
Anode –
Ǔ
BOARD MOUNTED VERTICALL Y IN CINCH 8840 EDGE CONNECT OR.
RRM
Reverse Blocking Region
(off state)
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
H
Forward Blocking Region
(off state)
I
DRM
at V
+ Voltage
DRM
0.096
2.44
0.096
2.44
0.059
1.5
0.472
12.0
0.096
2.44
0.059
1.5
Figure 1. PCB for Thermal Impedance and
Power Testing of SOT-223
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3
MCR08B, MCR08M
, INSTANTANEOUS ON-STATE CURRENT (AMPS)
I
, MAXIMUM ALLOWABLE
A
T
T
AMBIENT TEMPERATURE ( C)°
1.0
0.1
0.01
110
100
10
TYPICAL AT TJ = 110°C
MAX AT TJ = 110°C
MAX AT TJ = 25°C
0
2.0 3.0
4.01.0
160
150
140
130
°THERMAL RESISTANCE, ( C/W)
120
110
100
90
80
70
60
θJA
R , JUNCTION TO AMBIENT
50
40
30
TYPICAL
MAXIMUM
DEVICE MOUNTED ON
FIGURE 1 AREA = L
PCB WITH TAB AREA
AS SHOWN
MINIMUM
FOOTPRINT = 0.076 cm
2.00 4.0 6.0 8.0 10
1.0 3.0 5.0 7.0 9.0
FOIL AREA (cm2)vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
2
2
L
4
1 23
L
Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal
Resistance versus Copper T ab Area
110
, MAXIMUM ALLOWABLE
A
T
100
90
80
70
60
50
40
AMBIENT TEMPERATURE ( C)°
30
20
α = 30°
α
α = CONDUCTION
ANGLE
I
T(AV)
60°
90°
, AVERAGE ON-ST ATE CURRENT (AMPS)
0.4
α
ANGLE
0.5
90
80
70
60
50
α = 30°
40
30
20
60°
I
T(AV)
50 OR 60 Hz HALFWA VE
90°
0.30.20.10
, AVERAGE ON-STATE CURRENT (AMPS)
α = CONDUCTION
dc
180°
120°
dc
1.0 cm2 FOIL, 50 OR
60 Hz HALFWA VE
180°
120°
0.40.30.20.10
0.5
, MAXIMUM ALLOWABLE
A
T
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient T emperature
110
100
90
80
70
AMBIENT TEMPERATURE ( C)°
60
50
α = 30°
60°
α
α = CONDUCTION
ANGLE
I
T(AV)
90°
, AVERAGE ON-STATE CURRENT (AMPS)
PAD AREA = 4.0 cm2, 50
OR 60 Hz HALFWA VE
dc
180°
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient T emperature
120°
0.40.30.20.10
0.5
, MAXIMUM ALLOWABLE
(tab)
T
Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient T emperature
110
TAB TEMPERATURE ( C)°
85
α = 30°
60°
α
α = CONDUCTION
ANGLE
I
T(AV)
dc
90°
, AVERAGE ON-STATE CURRENT (AMPS)
50 OR 60 Hz HALFWA VE
Figure 7. Current Derating
Reference: Anode T ab
180°
120°
0.50.40.30.20.10
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