ON Semiconductor MCR08B, MCR08M Technical data

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MCR08B, MCR08M

Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for line powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing.

• Sensitive Gate Trigger Current

• Blocking Voltage to 600 Volts

• Glass Passivated Surface for Reliability and Uniformity

• Surface Mount Package

• Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and

Date Code

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SCRs

0.8 AMPERES RMS

200 thru 600 VOLTS

G

A

K

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Peak Repetitive Off–State V oltage

(Sine Wave, RGK = 1000 Ω,
TJ = 25 to 110°C)

On-State Current RMS

(All Conduction Angles; TC = 80°C)

Peak Non-repetitive Surge Current

(1/2 Cycle Sine Wave, 60 Hz,
TC = 25°C)

Circuit Fusing Considerations

(t = 8.3 ms)

Forward Peak Gate Power

(TC = 80°C, t = 1.0 µs)

Average Gate Power

(TC = 80°C, t = 8.3 ms)

Operating Junction Temperature Range T

Storage Temperature Range T

(1) V

and V

DRM

apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.

RRM

= 25°C unless otherwise noted)

J

(1)

MCR08BT1
MCR08MT1

for all types can be applied on a continuous basis. Ratings

V

DRM,

V

RRM

200
600

I

T(RMS)

I

TSM

I2t 0.4 A2s

P

GM

P

G(AV)

J

stg

0.8 Amps

8.0 Amps

0.1 Watts

0.01 Watts

–40 to

+110

–40 to

+150

Volts

°C

°C

4

1

2

3

SOT–223

CASE 318E

STYLE 10

PIN ASSIGNMENT

1
2
3
4

Cathode

Anode

Gate

Anode

ORDERING INFORMATION

Device Package Shipping

MCR08BT1 SOT223 16mm Tape and Reel

MCR08MT1 SOT223

Preferred devices are recommended choices for future use
and best overall value.

(1K/Reel)

16mm Tape and Reel

(1K/Reel)

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 3

1 Publication Order Number:

MCR08BT1/D

MCR08B, MCR08M

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Ambient

PCB Mounted per Figure 1

Thermal Resistance, Junction to Tab

Measured on Anode Tab Adjacent to Epoxy

Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) T

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated V

DRM

or V

, RGK = 1000 Ω)T

RRM

ON CHARACTERISTICS

Peak Forward On-State Voltage

(IT = 1.0 A Peak)

Gate Trigger Current (Continuous dc)

(VAK = 12 Vdc, RL = 100 Ω)

Holding Current

(VAK = 12 Vdc, Initiating Current = 20 mA)

Gate Trigger Voltage (Continuous dc)

(VAK = 12 Vdc, RL = 100 Ω)

(3)

(1)

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off State V oltage

(Vpk = Rated V

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) RGK = 1000 Ω is included in measurement.
(3) RGK is not included in measurement.

, TC = 110°C, RGK = 1000 Ω, Exponential Method)

DRM

= 25°C unless otherwise noted)

C

(2)

(3)

(3)

= 25°C

J

TJ = 110°C

Symbol Min Typ Max Unit

I

DRM

R

θJA

R

θJT

L

, I

RRM

V

TM

I

GT

I

H

V

GT

dv/dt 10 — — V/µs

—
—

— — 1.7 Volts

— — 200 µA

— — 5.0 mA

— — 0.8 Volts

156 °C/W

25 °C/W

260 °C

—
—

10

200

µA
µA

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2

MCR08B, MCR08M

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current

0.079

2.0

0.079

2.0

0.984

25.0

0.059

1.5

0.091

2.3

0.15

3.8

0.059

1.5

0.091

2.3

0.059

1.5

0.244

6.2

inches

ǒ

mm

V

TM

on state

I

I

at V

RRM

Reverse Avalanche Region

Anode –

Ǔ

BOARD MOUNTED VERTICALL Y IN CINCH 8840 EDGE CONNECT OR.

RRM

Reverse Blocking Region

(off state)

BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.

MATERIAL: G10 FIBERGLASS BASE EPOXY

H

Forward Blocking Region

(off state)

I

DRM

at V

+ Voltage

DRM

0.096

2.44

0.096

2.44

0.059

1.5

0.472

12.0

0.096

2.44

0.059

1.5

Figure 1. PCB for Thermal Impedance and

Power Testing of SOT-223

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3

MCR08B, MCR08M

, INSTANTANEOUS ON-STATE CURRENT (AMPS)
I

, MAXIMUM ALLOWABLE

A

T

T

AMBIENT TEMPERATURE ( C)°

1.0

0.1

0.01

110
100

10

TYPICAL AT TJ = 110°C
MAX AT TJ = 110°C
MAX AT TJ = 25°C

0

2.0 3.0

4.01.0

160
150
140
130

°THERMAL RESISTANCE, ( C/W)

120
110
100

90
80
70
60

θJA

R , JUNCTION TO AMBIENT

50
40
30

TYPICAL
MAXIMUM

DEVICE MOUNTED ON
FIGURE 1 AREA = L

PCB WITH TAB AREA
AS SHOWN

MINIMUM
FOOTPRINT = 0.076 cm

2.00 4.0 6.0 8.0 10

1.0 3.0 5.0 7.0 9.0
FOIL AREA (cm2)vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

2

2

L

4

1 23

L

Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal

Resistance versus Copper T ab Area

110

, MAXIMUM ALLOWABLE

A

T

100

90
80
70
60
50
40

AMBIENT TEMPERATURE ( C)°

30
20

α = 30°

α

α = CONDUCTION

ANGLE

I

T(AV)

60°

90°

, AVERAGE ON-ST ATE CURRENT (AMPS)

0.4

α

ANGLE

0.5

90
80
70
60
50

α = 30°

40
30
20

60°

I

T(AV)

50 OR 60 Hz HALFWA VE

90°

0.30.20.10

, AVERAGE ON-STATE CURRENT (AMPS)

α = CONDUCTION

dc

180°

120°

dc

1.0 cm2 FOIL, 50 OR
60 Hz HALFWA VE

180°

120°

0.40.30.20.10

0.5

, MAXIMUM ALLOWABLE

A

T

Figure 4. Current Derating, Minimum Pad Size

Reference: Ambient T emperature

110

100

90

80

70

AMBIENT TEMPERATURE ( C)°

60

50

α = 30°

60°

α

α = CONDUCTION

ANGLE

I

T(AV)

90°

, AVERAGE ON-STATE CURRENT (AMPS)

PAD AREA = 4.0 cm2, 50
OR 60 Hz HALFWA VE

dc

180°

Figure 6. Current Derating, 2.0 cm Square Pad

Reference: Ambient T emperature

120°

0.40.30.20.10

0.5

, MAXIMUM ALLOWABLE

(tab)

T

Figure 5. Current Derating, 1.0 cm Square Pad

Reference: Ambient T emperature

110

TAB TEMPERATURE ( C)°

85

α = 30°

60°

α

α = CONDUCTION

ANGLE

I

T(AV)

dc

90°

, AVERAGE ON-STATE CURRENT (AMPS)

50 OR 60 Hz HALFWA VE

Figure 7. Current Derating

Reference: Anode T ab

180°

120°

0.50.40.30.20.10

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4

MCR08B, MCR08M

1.0

0.9

0.8

0.7

0.6

0.5

0.4

,DISSIPATION (WATTS)

0.3

(AV)

0.2

MAXIMUM AVERAGE POWER

P

0.1

α = CONDUCTION

0

0.7

0.6

0.5

ANGLE

α

α = 30°

60°

90°

0.30.20.10

I

, AVERAGE ON-STATE CURRENT (AMPS)

T(AV)

Figure 8. Power Dissipation

120°

180°

0.4

VAK = 12 V
RL = 100 Ω

1.0

0.1

0.5

NORMALIZED

, TRANSIENT THERMAL RESISTANCE

T

r

0.01

0.001 0.01 1.0 10
t, TIME (SECONDS)

1000.10.0001

dc

Figure 9. Thermal Response Device

Mounted on Figure 1 Printed Circuit Board

2.0

VAK = 12 V
RL = 3.0 kΩ

1.0

, GATE TRIGGER VOLTAGE (VOLTS)

GT

V

, GATE TRIGGER VOLTAGE (VOLTS)

GT

V

0.4

0.3

0.7

0.65

0.6

0.55

0.5

0.45

0.4

0.35

0.3

8020–40 –20 0 40 60 110

TJ, JUNCTION TEMPERATURE, (°C)

Figure 10. T ypical Gate Trigger Voltage

versus Junction T emperature

VAK = 12 V
RL = 100 Ω
TJ = 25°C

1.0 100

IGT, GATE TRIGGER CURRENT (µA)

(NORMALIZED)

, HOLDING CURRENT

H

I

0

1000
A)

100

10

, GATE TRIGGER CURRENT (µ

GT

I

1000100.1

1.0

8020–40 –20 0 40 60 110

TJ, JUNCTION TEMPERATURE, (°C)

Figure 11. Typical Normalized Holding Current

versus Junction T emperature

RGK = 1000 Ω, RESISTOR
CURRENT INCLUDED

VAK = 12 V
RL = 100 Ω

WITHOUT GATE RESISTOR

8020–40 –20 0 40 60 110

TJ, JUNCTION TEMPERATURE (°C)

Figure 12. T ypical Range of VGT

versus Measured I

GT

Figure 13. T ypical Gate Trigger Current

versus Junction T emperature

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5

MCR08B, MCR08M

100

1.0

HOLDING CURRENT (mA)I ,

H

0.1

10000

1000

500

100

10

IGT = 7 µA

10 100 10,000 100,000
RGK, GATE-CATHODE RESISTANCE (OHMS)

10001.0

Figure 14. Holding Current Range versus

Gate-Cathode Resistance

300 V

200 V

400 V

100 V

TJ = 25°C

TJ = 110°C

50 V

IGT = 48 µA

10000

5000
1000

500
100

50
10

5.0

STATIC dv/dt (V/ S)µ

1.0

0.5

0.1
10 100 1000 10,000 100,000

RGK, GATE-CATHODE RESISTANCE (OHMS)

125°

110°

Vpk = 400 V

TJ = 25°

75°

Figure 15. Exponential Static dv/dt versus Junction

T emperature and Gate-Cathode Termination Resistance

10000

1000

500

100

TJ = 110°C

400 V (PEAK)

RGK = 100

50°

50

10

STATIC dv/dt (V/ S)µ

5.0

1.0

500 V

RGK, GATE-CATHODE RESISTANCE (OHMS)

Figure 16. Exponential Static dv/dt versus Peak

V oltage and Gate-Cathode Termination Resistance

10000

1000

500

100

50

10

STATIC dv/dt (V/ S)µ

5.0

1.0

IGT = 5 µA

100 1000 10,000 100,00010

50

10

STATIC dv/dt (V/ S)µ

5.0

10,00010 100 1000

1.0

0.01

Figure 17. Exponential Static dv/dt versus

Gate-Cathode Capacitance and Resistance

IGT = 70 µA

IGT = 15 µA

GATE-CATHODE RESISTANCE (OHMS)

RGK = 1.0 k

RGK = 10 k

0.1 1.0 10 100

CGK, GATE-CATHODE CAPACITANCE (nF)

IGT = 35 µA

Figure 18. Exponential Static dv/dt versus
Gate-Cathode Termination Resistance and

Product Trigger Current Sensitivity

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6

MCR08B, MCR08M

INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection

0.079

2.0

0.091

2.3

0.079

2.0

0.059

1.5

SOT-223

SOT-223 POWER DISSIPATION

The power dissipation of the SOT -223 is a function of the
anode pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T
temperature of the die, R

, the maximum rated junction

J(max)

, the thermal resistance from

θJA

the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT-223 package, PD can be calculated as
follows:

PD =

T

J(max)

R

θJA

– T

A

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 550 milliwatts.

110°C – 25°C

PD =

156°C/W

= 550 milliwatts

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.15

3.8

0.248

6.3

inches

mm

0.059

1.5

0.091

2.3

0.059

1.5

The 156°C/W for the SOT-223 package assumes the use

of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 550
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT-223 package. One is to
increase the area of the anode pad. By increasing the area of
the anode pad, the power dissipation can be increased.
Although one can almost double the power dissipation with
this method, one will be giving up area on the printed
circuit board which can defeat the purpose of using surface
mount technology . A graph of R

versus anode pad area

θJA

is shown in Figure 3.

Another alternative would be to use a ceramic substrate

or an aluminum core board such as Thermal Clad. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass

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or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT-223 package should
be the same as the pad size on the printed circuit board, i.e.,
a 1:1 registration.

7

MCR08B, MCR08M

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 19 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.

• The soldering temperature and time should not exceed
260°C for more than 10 seconds.

• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.

• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied
during cooling.

* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.

The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.

200°C

150°C

100°C

50°C

STEP 1

PREHEAT

ZONE 1
“RAMP”

DESIRED CURVE FOR HIGH

TIME (3 TO 7 MINUTES TOTAL)

STEP 2

VENT

“SOAK”

MASS ASSEMBLIES

150°C

100°C

Figure 19. T ypical Solder Heating Profile

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

DESIRED CURVE FOR LOW

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

160°C

140°C

MASS ASSEMBLIES

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8

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

170°C

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

STEP 6

VENT

T

MAX

STEP 7

COOLING

205° TO

219°C
PEAK AT
SOLDER

JOINT

0.08 (0003)

S

L

H

A

F

4

123

G

MCR08B, MCR08M

P ACKAGE DIMENSIONS

SOT–223

CASE 318E–04

ISSUE J

B

D

C

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIMAMIN MAX MIN MAX

0.249 0.263 6.30 6.70

B 0.130 0.145 3.30 3.70
C 0.060 0.068 1.50 1.75
D 0.024 0.035 0.60 0.89
F 0.115 0.126 2.90 3.20
G 0.087 0.094 2.20 2.40
H 0.0008 0.0040 0.020 0.100

J

J 0.009 0.014 0.24 0.35
K 0.060 0.078 1.50 2.00
L 0.033 0.041 0.85 1.05
M 0 10 0 10

____

S 0.264 0.287 6.70 7.30

MILLIMETERS

K

STYLE 10:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

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9

Notes

MCR08B, MCR08M

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10

Notes

MCR08B, MCR08M

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11

MCR08B, MCR08M

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability ,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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MCR08BT1/D