ON Semiconductor MC74VHC1G125 Technical data

MC74VHC1G125

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Noninverting 3-State Buf fer

The MC74VHC1G125 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including a buffered 3–state output which provides high noise immunity and stable output.

The MC74VHC1G125 input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage. This allows the MC74VHC1G125 to be used to interface 5V circuits to 3V circuits.

• High Speed: t

• Low Power Dissipation: I

• Power Down Protection Provided on Inputs

• Balanced Propagation Delays

• Pin and Function Compatible with Other Standard Logic Families

• Latchup Performance Exceeds 300mA

• ESD Performance: HBM > 1500V; MM > 200V

= 3.5ns (T yp) at VCC = 5V

PD

= 2µA (Max) at TA = 25°C

CC

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SC–88A / SOT–353

DF SUFFIX

CASE 419A

MARKING DIAGRAM

d

W0

Pin 1 d = Date Code

OE

IN A

2

GND

Figure 1. 5–Lead SOT–353 Pinout (Top View)

LOGIC SYMBOL

OE

IN A

EN

51

43

OUT Y

VCC

OUT Y

PIN ASSIGNMENT

1 2

3 GND

4

5 VCC

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.

FUNCTION TABLE

A Input Y Output

L H X

OE

Input

L L

H

OE

IN A

OUT Y

L H Z

This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.

 Semiconductor Components Industries, LLC, 1999

February , 2000 – Rev. 0

1 Publication Order Number:

MC74VHC1G125/D

MC74VHC1G125

MAXIMUM RATINGS*

Characteristics Symbol Value Unit

DC Supply Voltage V DC Input Voltage V DC Output Voltage VCC = 0

Input Diode Current I Output Diode Current (V DC Output Current, per Pin I DC Supply Current, VCC and GND I Power dissipation in still air, SC–88A † P Lead temperature, 1 mm from case for 10 s T Storage temperature T

* Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those

indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — SC–88A Package: –3 mW/_C from 65_ to 125_C

High or Low State

< GND; V

OUT

> VCC) I

OUT

V

OUT

CC

IN

OUT

IK

OK

CC

D L

stg

RECOMMENDED OPERATING CONDITIONS

Characteristics Symbol Min Max Unit

DC Supply Voltage V DC Input Voltage V DC Output Voltage V Operating Temperature Range T Input Rise and Fall Time VCC = 3.3V ± 0.3V

VCC = 5.0V ± 0.5V

CC

IN

OUT

tr , t

A

f

–0.5 to +7.0 V –0.5 to +7.0 V

–0.5 to 7.0

–0.5 to VCC + 0.5

–20 mA +20 mA +25 mA +50 mA 200 mW 260 °C

–65 to +150 °C

2.0 5.5 V

0.0 5.5 V

0.0 V

–55 +85 °C

0 0

CC

100

20

ns/V

V

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MC74VHC1G125

Î

I

Y

Î

I

Y

Î

I

Y

Î

DC ELECTRICAL CHARACTERISTICS

V

CC

Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit

V

IH

Minimum High–Level Input Voltage

2.0

3.0

4.5

5.5

V

IL

Maximum Low–Level Input Voltage

2.0

3.0

4.5

5.5

V

I

OH

OL

OZ

IN

CC

Minimum High–Level Output Voltage VIN = VIH or V

IL

Maximum Low–Level Output Voltage VIN = VIH or V

IL

Maximum 3–State Leakage Current

Maximum Input Leakage Current

Maximum Quiescent Supply Current

VIN = VIH or V IOH = –50µA

VIN = VIH or V IOH = –4mA

IL

IOH = –8mA VIN = VIH or V

IOL = 50µA

VIN = VIH or V IOL = 4mA

IL

IOL = 8mA VIN = VIH or V

V

= VCC or GND

OUT

IL

VIN = 5.5V or GND 0 to

VIN = VCC or GND 5.5 2.0 20 40 µA

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

5.5 ±0.25 ±2.5 ±2.5 µA

5.5

TA = 25°C TA ≤ 85°C TA ≤ 125°C

1.5

2.1

3.15

3.85

1.9

2.9

4.4

2.58

3.94

1.35

1.65

2.0

3.0

4.5

0.0

0.36

0.5

0.9

0.1

1.5

2.1

3.15

3.85

0.5

0.9

1.35

1.65

1.9

2.9

4.4

2.48

3.80

0.1

0.44

±0.1 ±1.0 ±1.0 µA

1.5

2.1

3.15

3.85

0.5

0.9

1.35

1.65

1.9

2.9

4.4

2.34

3.66

0.1

0.52

V

AC ELECTRICAL CHARACTERISTICS (C

Symbol

t

,

PLH

t

PHL

ÎÎ

t

,

PZL

ÎÎ

t

PZH

ÎÎÎООООО

t

,

PLZ

t

PHZ

ÎÎÎООООО

C

IN

C

OUT

ÎÎ

Parameter

Maximum Propogation Delay,

ООООО

nput A to

(Figures 2 and 4)

Maximum Output

ООООО

Enable Time,

nput OE to

(Figures 3 and 5)

Maximum Output Disable Time,

nput OE to

(Figures 3 and 5)

VCC = 3.0 ± 0.3V CL = 15 pF

ООООООО

VCC = 5.0 ± 0.5V CL = 15 pF

VCC = 3.3 ± 0.3V CL = 15 pF

ООООООО

RL = 1k VCC = 5.0 ± 0.5V CL = 15 pF

RL = 1k

ООООООО

VCC = 3.3 ± 0.3V CL = 15 pF RL = 1k

VCC = 5.0 ± 0.5V CL = 15 pF

ООООООО

RL = 1k Maximum Input Capacitance Maximum 3–State Output Capacitance

(Output in High Impedance State)

ООООООООООООО

= 50 pF, Input tr = tf = 3.0ns)

load

Test Conditions

CL = 50 pF

W

CL = 50 pF

TA = 25°C

Min

Typ

4.5

ÎÎÎ

6.4

3.5

4.5

ÎÎÎ

6.4

3.5

ÎÎÎ

4.5

6.5

8.0

ÎÎÎ

4.8

7.0

4.0

6.0

ÎÎÎ

TA ≤ 85°C

Max

Min

Max

8.0

11.5

Î

13.0

ÎÎÎ

5.5

7.5

8.0

Î

11.5

ÎÎÎ

13.0

5.1

7.1

Î

13.2

Î

9.7

6.8

8.8

ÎÎÎ

11.5

15.0

ÎÎÎ

10.0

10

ÎÎÎÎÎÎÎÎÎ

9.5

6.5

8.5

9.5

6.0

8.0

10

TA ≤ 125°C

Min

Max

12.0

16.0

ÎÎÎ

8.5

10.5

11.5

ÎÎÎ

15.0

8.5

10.5

ÎÎÎ

14.5

18.0

10.0

ÎÎÎ

12.0 10

Unit

ns

pF pF

Typical @ 25°C, VCC = 5.0V

C

PD

Power Dissipation Capacitance (Note 1.)

8.0

pF

1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I

2

power consumption; PD = CPD  V

 fin + ICC  VCC.

CC

CC(OPR

= CPD  VCC  fin + ICC. CPD is used to determine the no–load dynamic

)

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ON Semiconductor MC74VHC1G125 Technical data

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