ON Semiconductor MC74HC74A User Manual

MC74HC74A
Dual D Flip-Flop with Set and Reset
High−Performance Silicon−Gate CMOS
This device consists of two D flip−flops with individual Set, Reset, and Clock inputs. Information at a D−input is transferred to the corresponding Q output on the next positive going edge of the clock input. Both Q and Q
outputs are available from each flip−flop. The Set
and Reset inputs are asynchronous.
Features
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the JEDEC Standard No. 7.0 A Requirements
Chip Complexity: 128 FETs or 32 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
LOGIC DIAGRAM
RESET 1
DATA 1
CLOCK 1
SET 1
RESET 2
DATA 2
CLOCK 2
SET 2
1
2
3
4
13
12
11
10
5
6
9
8
PIN 14 = VCC PIN 7 = GND
Q1
Q1
Q2
Q2
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SOIC−14 NB
D SUFFIX
CASE 751A
TSSOP−14 DT SUFFIX
CASE 948G
PIN ASSIGNMENT
RESET 1
DATA 1
CLOCK 1
SET 1
Q1 Q1
GND
1 2 3 4
6 7
14 13 12 11 105
9 8
V
CC
RESET 2 DATA 2
CLOCK 2 SET 2
Q2 Q2
MARKING DIAGRAMS
14
HC74AG
AWLYWW
1
SOIC−14 NB
14
HC
74A
ALYWG
G
1
TSSOP−14
A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or G = Pb−Free Package
(Note: Microdot may be in either location)
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 14
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
1 Publication Order Number:
MC74HC74A/D
MC74HC74A
FUNCTION TABLE
Inputs Outputs
Set Reset Clock Data Q Q
LH XX HL
HL XX LH
L L X X H* H* HH H HL HH L LH H H L X No Change H H H X No Change H H X No Change
*Both outputs will remain high as long as Set
and Reset are low, but the output states are unpredictable if Set and Reset go high simultaneously.
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †Derating: SOIC Package: –7 mW/_C from 65_ to 125_ C
DC Supply Voltage (Referenced to GND) –0.5 to + 7.0 V
CC
V
DC Input Voltage (Referenced to GND) –0.5 to VCC + 0.5 V
in
DC Output Voltage (Referenced to GND) –0.5 to VCC + 0.5 V
out
I
DC Input Current, per Pin ±20 mA
in
I
DC Output Current, per Pin ±25 mA
out
I
DC Supply Current, VCC and GND Pins ±50 mA
CC
P
Power Dissipation in Still Air, SOIC Package†
D
TSSOP Package†
T
Storage Temperature –65 to +150
stg
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
(SOIC or TSSOP Package)
TSSOP Package: −6.1 mW/_C from 65_ to 125_C
500 450
260 300
mW
_C _C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance cir­cuit. For proper operation, V
should be constrained to the
V
out
range GND v (V
in
or V
) v VCC.
out
in
and
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
Unused outputs must be left open.
).
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
Vin, V
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
CC
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
out
T
Operating Temperature, All Package Types –55 +125
A
tr, tfInput Rise and Fall Time VCC = 2.0 V
(Figures 1, 2, 3) V
V V
= 3.0 V
CC
= 4.5 V
CC
= 6.0 V
CC
0 0 0 0
CC
1000
600 500 400
V
_C
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
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MC74HC74A
l
l
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbo
V
IH
V
IL
V
OH
V
OL
I
in
I
CC
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Minimum High−Level Output Voltage
Maximum Low−Level Output Voltage
Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 Maximum Quiescent Supply
Current (per Package)
Parameter Test Conditions
V
= 0.1 V or VCC – 0.1 V
out
|I
| v 20 mA
out
V
= 0.1 V or VCC – 0.1 V
out
|I
| v 20 mA
out
Vin = VIH or V |I
| v 20 mA
out
Vin = VIH or VIL|I
Vin = VIH or V |I
| v 20 mA
out
Vin = VIH or VIL|I
IL
IL
| v 2.4 mA
out
| v 4.0 mA
|I
out
|I
| v 5.2 mA
out
| v 2.4 mA
out
| v 4.0 mA
|I
out
|I
| v 5.2 mA
out
Vin = VCC or GND I
= 0 mA
out
Guaranteed Limit
CC
V
–55 to
25_C
1.5
2.1
3.15
4.2
0.5
0.9
1.35
1.8
1.9
4.4
5.9
2.48
3.98
5.48
0.1
0.1
0.1
0.26
0.26
0.26
v 85_C v 125_C
1.5
2.1
3.15
3.15
4.2
0.5
0.9
1.35
1.35
1.8
1.9
4.4
5.9
2.34
3.84
5.34
0.1
0.1
0.1
0.33
0.33
0.33
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
6.0 2.0 20 80
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
2.2
3.7
5.2
0.1
0.1
0.1
0.4
0.4
0.4
Unit
V
V
V
V
mA mA
AC ELECTRICAL CHARACTERISTICS (C
Symbo
f
max
Maximum Clock Frequency (50% Duty Cycle)
Parameter
= 50 pF, Input tr = t
L
= 6.0 ns)
f
(Figures 1 and 4)
t
,
Maximum Propagation Delay, Clock to Q or Q
PLH
t
t
PLH
t
t
TLH
t
C
PHL
PHL
THL
C
PD
in
(Figures 1 and 4)
,
Maximum Propagation Delay, Set or Reset to Q or Q
(Figures 2 and 4)
,
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
Maximum Input Capacitance 10 10 10 pF
Power Dissipation Capacitance (Per Flip−Flop)*
*Used to determine the no−load dynamic power consumption: PD = CPD V
2
f + ICC VCC.
CC
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
CC
V
Guaranteed Limit
– 55 to
25_C
6.0 15 30 35
100
75 20 17
105
80 21 18
75 30 15 13
v 85_C v 125_C
4.8 10 24 28
125
90 25 21
130
95 26 22
95 40 19 16
Typical @ 25°C, VCC = 5.0 V
32
4.0
8.0 20 24
150 120
30 26
160 130
32 27
110
55 22 19
Unit
MHz
ns
ns
ns
pF
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