ON Semiconductor MC74HC573A Technical data

MC74HC573A
Octal 3−State Noninverting Transparent Latch
High−Performance Silicon−Gate CMOS
These latches appear transparent to data (i.e., the outputs change asynchronously) when Latch Enable is high. When Latch Enable goes low, data meeting the setup and hold time becomes latched.
The HC573A is identical in function to the HC373A but has the data inputs on the opposite side of the package from the outputs to facilitate PC board layout.
Features
Pb−Free Packages are Available*
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 A
In Compliance with the JEDEC Standard No. 7.0 A Requirements
Chip Complexity: 218 FETs or 54.5 Equivalent Gates
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MARKING
DIAGRAMS
20
PDIP−20
N SUFFIX
20
1
20
1
20
1
CASE 738
SOIC WIDE−20
DW SUFFIX CASE 751D
TSSOP−20 DT SUFFIX
CASE 948E
MC74HC573AN
AWLYYWW
1
20
HC573A
AWLYYWW
1
20
HC
573A
ALYW
1
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 10
1 Publication Order Number:
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
MC74HC573A/D
MC74HC573A
Î
Î
Î
Î
Î
Î
D0
D1
D2
DATA
INPUTS
D3
D4
D5
D6
D7
LATCH ENABLE
OUTPUT ENABLE
Figure 1. LOGIC DIAGRAM Figure 2. PIN ASSIGNMENT
Output Latch Enable Enable D Q
X = Don’t Care Z = High Impedance
219
3
4
5
6
7
8
9
Q0
18
Q1
17
Q2
16
15
14
13
12
Q3
Q4
Q5
Q6
Q7
NONINVERTING
OUTPUTS
11
1
PIN 20 = V PIN 10 = GND
CC
FUNCTION TABLE
Inputs Output
LHHH LHLL L L X No Change
HXXZ
OUTPUT
ENABLE
GND
D0
D1
D2
D3 5
D4
D5
D6
D7
1
2
3
4
6
7
8
9
10
20
V
CC
19
Q0
18
Q1
17
Q2
16
Q3
15
Q4
14
Q5
13
Q6
12
Q7
LATCH
11
ENABLE
Design Criteria
Internal Gate Count*
ОООООООО
Internal Gate Propagation Delay
Internal Gate Power Dissipation
Speed Power Product
ОООООООО
*Equivalent to a two−input NAND gate.
Value
54.5
ÎÎ
1.5
5.0
0.0075
ÎÎ
Units
ea.
Î
ns
W
pJ
Î
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2
MC74HC573A
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ÎÎ
ÎÎ
ÎÎ
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ÎÎ
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MAXIMUM RATINGS
Symbol
V
V
ÎÎ
ÎÎ
DC Supply Voltage (Referenced to GND)
CC
V
DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND)
out
I
DC Input Current, per Pin
in
I
DC Output Current, per Pin
out
I
DC Supply Current, VCC and GND Pins
CC
P
Power Dissipation in Still Air, Plastic DIP†
D
ОООООООООООО
T
Storage Temperature
stg
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
ОООООООООООО
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are
ООООООООООООООООООООО
not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
†Derating — Plastic DIP: –10 mW/C from 65 to 125C
SOIC Package: –7 mW/C from 65 to 125C TSSOP Package: −6.1 mW/°C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
Parameter
SOIC Package†
TSSOP Package†
(Plastic DIP, TSSOP or SOIC Package)
Value
– 0.5 to + 7.0 – 0.5 to VCC + 0.5 – 0.5 to VCC + 0.5
± 20 ± 35 ± 75
750 500
ÎÎÎ
450
– 65 to + 150
260
ÎÎÎ
Unit
mA mA mA
mW
Î
CC
Î
This device contains protection
V V V
circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance cir­cuit. For proper operation, V V
should be constrained to the
out
range GND (V
in
or V
) VCC.
out
in
and
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
Unused outputs must be left open.
).
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
Vin, V
T
A
tr, t
ÎÎ
DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND)
out
Operating Temperature, All Package Types Input Rise and Fall Time VCC = 2.0 V
f
(Figure 1) V
ООООООООООООО
Parameter
V
= 4.5 V
CC
= 6.0 V
CC
Min
2.0 0
– 55
0 0
Î
0
Max
6.0
V
CC
+ 125
1000
500 400
Unit
V V
C
ns
Î
ORDERING INFORMATION
Device Package Shipping
MC74HC573AN PDIP−20 1440 Units / Box MC74HC573ANG PDIP−20
1440 Units / Box
(Pb−Free) MC74HC573ADW SOIC−WIDE 38 Units / Rail MC74HC573ADWG SOIC−WIDE
38 Units / Rail
(Pb−Free) MC74HC573ADWR2 SOIC−WIDE 1000 Units / Reel MC74HC573ADWR2G SOIC−WIDE
1000 Units / Reel
(Pb−Free) MC74HC573ADT TSSOP−20* 75 Units / Rail MC74HC573ADTR2 TSSOP−20* 2500 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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3
MC74HC573A
V
CC
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
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Î
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Î
Î
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Î
Î
Î
Î
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Î
Î
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Î
Î
Î
Î
Î
Î
Î
Î
Î
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Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
V
CC
Î
Î
Î
Î
Î
Î
Î
Î
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Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
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Î
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Î
Î
Î
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Î
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Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
V
– 55 to 25C
2.0
3.0
Î
4.5
Î
6.0
2.0
3.0
Î
4.5
V
ÎÎÎ
ÎÎÎ
ÎÎÎ
Symbol
V
IH
ÎÎ
ÎÎ
V
IL
ÎÎ
Parameter
Minimum High−Level Input Voltage
ООООООО
ООООООО
Maximum Low−Level Input Voltage
ООООООО
Test Conditions
V
= 0.1 V or VCC – 0.1 V
out
| 20 A
|I
ООООООО
out
ООООООО
V
= 0.1 V or VCC – 0.1 V
out
| 20 A
|I
out
ООООООО
6.0
V
ÎÎ
ÎÎÎОООООООÎООООООО
V
ÎÎ
ÎÎÎОООООООÎООООООО
ÎÎ
ÎÎ
Minimum High−Level Output
OH
OL
I
in
I
OZ
I
CC
ООООООО
Voltage
Maximum Low−Level Output
ООООООО
Voltage
Maximum Input Leakage Current Maximum Three−State
Leakage Current
ООООООО
Maximum Quiescent Supply Current (per Package)
ООООООО
Vin = VIH or V
ООООООО
|I
| 20 A
out
Vin = VIH or V
V
= 0.1 V or VCC – 0.1 V
out
ООООООО
| 20 A
|I
out
Vin = VIH or V
IL
|I
out
| 6.0 mA
|I
out
|I
| 7.8 mA
out
|I
out
|I
| 6.0 mA
out
| 7.8 mA
|I
out
| 2.4mA
| 2.4mA
IL
IL
Vin = VCC or GND Output in High−Impedance State
V
= VIL or V
ООООООО
in
V
= VCC or GND
out
IH
Vin = VCC or GND
I = 0 A
II
ООООООО
out
2.0
Î
4.5
6.0
3.0
Î
4.5
6.0
2.0
Î
4.5
6.0
3.0
Î
4.5
6.0
6.0
6.0
Î
6.0
Î
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
NOTE:Information on typical parametric values can be found i n Chapter 2 of the ON S emiconductor High−Speed CMOS Data Book ( DL129/D).
Guaranteed Limit
1.5
2.1
3.15
4.2
0.5
0.9
1.35
1.8
1.9
4.4
5.9
2.48
3.98
5.48
0.1
0.1
0.1
0.26
0.26
0.26 ± 0.1 – 0.5
4.0
85C
1.5
2.1
ÎÎ
3.15
ÎÎ
4.2
0.5
0.9
ÎÎ
1.35 1 8
1.9
ÎÎ
4.4
5.9
2.34
ÎÎ
3.84
5.34
0.1
ÎÎ
0.1
0.1
0.33
ÎÎ
0.33
0.33
± 1.0 – 5.0
ÎÎ
40
ÎÎ
125C
1.5
2.1
ÎÎ
3.15
ÎÎ
4.2
0.5
0.9
ÎÎ
1.35
1.8
1.9
ÎÎ
4.4
5.9
2.2
ÎÎ
3.7
5.2
0.1
ÎÎ
0.1
0.1
0.4
ÎÎ
0.4
0.4
± 1.0
– 10
ÎÎ
160
ÎÎ
Unit
V
V
V
V
AA
A
AC ELECTRICAL CHARACTERISTICS (C
Symbol
t
PLH
t
PHL
ÎÎ
ÎÎ
t
PLH
t
PHL
ÎÎ
ÎÎ
t
PLZ
t
PHZ
ÎÎ
t
PZL
t
ÎÎ
PZH
ÎÎ
t
TLH
t
THL
ÎÎ
ÎÎ
C
in
C
out
ÎÎ
,
Maximum Propagation Delay, Input D to Q
(Figures 1 and 5)
ООООООООООООООО
ООООООООООООООО
,
Maximum Propagation Delay, Latch Enable to Q
(Figures 2 and 5)
ООООООООООООООО
ООООООООООООООО
,
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
ООООООООООООООО
,
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
ООООООООООООООО
ООООООООООООООО
,
Maximum Output Transition Time, Any Output
(Figures 1 and 5)
ООООООООООООООО
ООООООООООООООО
Maximum Input Capacitance Maximum Three−State Output Capacitance (Output in High−Impedance
ООООООООООООООООО
State)
Parameter
= 50 pF, Input tr = tf = 6.0 ns)
L
V
2.0
3.0
Î
4.5
Î
6.0
2.0
3.0
Î
4.5
6.0
Î
2.0
3.0
4.5
Î
6.0
2.0
3.0
Î
4.5
Î
6.0
2.0
3.0
Î
4.5
6.0
Î
V
Guaranteed Limit
– 55 to 25C
150 100
ÎÎÎ
30
ÎÎÎ
26
160 105
ÎÎÎ
32 27
ÎÎÎ
150 100
30
ÎÎÎ
26
150 100
ÎÎÎ
30
ÎÎÎ
26 60
27
ÎÎÎ
12 10
ÎÎÎ
10 15
ÎÎÎ
85C
190 140
ÎÎ
38
ÎÎ
33
200 145
ÎÎ
40 34
ÎÎ
190 125
38
ÎÎ
33
190 125
ÎÎ
38
ÎÎ
33 75
32
ÎÎ
15 13
ÎÎ
10 15
ÎÎ
125C
225 180
ÎÎ
45
ÎÎ
38
240 190
ÎÎ
48 41
ÎÎ
225 150
45
ÎÎ
38
225 150
ÎÎ
45
ÎÎ
38 90
36
ÎÎ
18 15
ÎÎ
10 15
ÎÎ
Unit
ns
ns
ns
ns
ns
pF pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Enabled Output)*
*Used to d etermine the no−load dynamic power consumption: PD = CPD V
2
f + ICC VCC. For load considerations, see Chapter 2 of t h e
CC
23
pF
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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4
MC74HC573A
V
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
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Î
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Î
Î
Î
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Î
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Î
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Î
Î
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Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
TIMING REQUIREMENTS (C
Symbol
t
su
ÎÎ
ÎÎ
t
h
ÎÎ
ÎÎ
t
w
ÎÎ
ÎÎ
tr, t
f
ÎÎ
ÎÎ
Minimum Setup Time, Input D to Latch Enable
ООООООООООО
ООООООООООО
Minimum Hold Time, Latch Enable to Input D
ООООООООООО
ООООООООООО
Minimum Pulse Width, Latch Enable
ООООООООООО
ООООООООООО
Maximum Input Rise and Fall Times
ООООООООООО
ООООООООООО
Parameter
= 50 pF, Input tr = tf = 6.0 ns)
L
Fig.
4
Î
Î
4
Î
Î
2
Î
Î
1
Î
Î
CC
V
2.0
Î
3.0
4.5
Î
6.0
2.0
Î
3.0
4.5
Î
6.0
2.0
Î
3.0
4.5
Î
6.0
2.0
Î
3.0
4.5
Î
6.0
– 55 to 25C
Min
Max
50
Î
Î
40 10
Î
Î
9.0
5.0
Î
5.0
5.0
Î
5.0
Î
Î
75 60 15 13
Î
Î
Î
Î
1000
Î
Î
Î
800 500
Î
400
Guaranteed Limit
85C
Min
Max
65
Î
50 13
Î
Î
Î
11
5.0
Î
5.0
5.0
Î
5.0 95
Î
80 19
Î
16
Î
Î
Î
Î
1000
Î
Î
Î
800 500
Î
400
125C
Min
75
Î
60 15
Î
13
5.0
Î
5.0
5.0
Î
5.0
110
Î
90 22
Î
19
Î
Î
Max
Î
Î
Î
Î
Î
Î
1000
Î
800 500
Î
400
Unit
ns
ns
ns
ns
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5
INPUT D
MC74HC573A
SWITCHING WAVEFORMS
V
t
r
90%
50%
10%
t
PLH
Q
90%
50%
10%
t
TLH
t
f
V
CC
GND
t
PHL
t
THL
LATCH
ENABLE
Q
50%
50%
t
w
t
PLH
t
PHL
Figure 3. Figure 4.
CC
GND
OUTPUT ENABLE
DEVICE
UNDER
TEST
50%
t
PZLtPLZ
Q
Q
50%
t
PZHtPHZ
1.3 V
Figure 5. Figure 6.
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
Figure 7. Test Circuit
TEST POINT
OUTPUT
1 k
CL*
CONNECT TO VCC WHEN TESTING t CONNECT TO GND WHEN TESTING t
10%
90%
PLZ
PHZ
3.0 V
GND
HIGH IMPEDANCE
V
V
HIGH IMPEDANCE
AND t
AND t
OL
OH
PZL
PZH
VALID
INPUT D
LATCH
50%
t
SU
t
h
50%
ENABLE
2
D0
3
D1
4
D2
5
D3
6
D4
7
D5
8
D6
9
.
D7
D LE
D LE
D LE
D LE
D LE
D LE
D LE
D LE
Q
Q
Q
Q
Q
Q
Q
Q
V
CC
GND
V
CC
GND
19
Q0
18
Q1
17
Q2
16
Q3
15
Q4
14
Q5
13
Q6
12
Q7
.
LATCH ENABLE
11
1
*Includes all probe and jig capacitance
OUTPUT ENABLE
Figure 8. Test Circuit Figure 9. EXPANDED LOGIC DIAGRAM
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MC74HC573A
PACKAGE DIMENSIONS
PDIP−20
N SUFFIX
PLASTIC DIP PACKAGE
CASE 738−03
ISSUE E
−T−
SEATING PLANE
−A−
20
11
B
1
10
C
L
K
M
E
FG
N
20 PL
D
0.25 (0.010) T
J 20 PL
M
M
A
0.25 (0.010) T
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
DIM MIN MAX MIN MAX
A 25.66 27.171.010 1.070 B 6.10 6.600.240 0.260 C 3.81 4.570.150 0.180 D 0.39 0.550.015 0.022 E F G 2.54 BSC0.100 BSC
J 0.21 0.380.008 0.015 K 2.80 3.550.110 0.140 L 7.62 BSC0.300 BSC M 0 15 0 15 N 0.51 1.010.020 0.040
M
B
MILLIMETERSINCHES
1.27 BSC0.050 BSC
1.27 1.770.050 0.070

SOIC−20
DW SUFFIX
CASE 751D−05
ISSUE G
H10X
M
B
M
0.25
D
20
A
11
E
1
B20X
M
0.25
T
SAS
B
10
B
h X 45
A
L
18X
SEATING
e
A1
T
PLANE
C
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION.
MILLIMETERS
DIM MIN MAX
A 2.35 2.65
A1 0.10 0.25
B 0.35 0.49 C 0.23 0.32 D 12.65 12.95 E 7.40 7.60
e 1.27 BSC
H 10.05 10.55
h 0.25 0.75 L 0.50 0.90
0 7

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7
MC74HC573A
PACKAGE DIMENSIONS
TSSOP−20 DT SUFFIX
CASE 948E−02
ISSUE B
20X REFK
S
U0.15 (0.006) T
0.10 (0.004) V
M
S
U
T
S
K
2X
L/2
L
PIN 1 IDENT
110
1120
B
JJ1
−U−
N
S
U0.15 (0.006) T
A
K1
SECTION N−N
0.25 (0.010)
M
−V− N
F
DETAIL E
C
G
H
DETAIL E
0.100 (0.004)
−T−
SEATING PLANE
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−.
MILLIMETERS
−W−
DIMAMIN MAX MIN MAX
B 4.30 4.50 0.169 0.177 C 1.20 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030
G 0.65 BSC 0.026 BSC
H 0.27 0.37 0.011 0.015 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8
6.60 0.260
6.40 0.252
−−− −−−
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INCHES
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MC74HC573A/D
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