ON Semiconductor MC74HC4066A Technical data

MC74HC4066A

Quad Analog Switch/ Multiplexer/Demultiplexer

High−Performance Silicon−Gate CMOS

The MC74HC4066A utilizes silicon−gate CMOS technology to achieve fast propagation delays, low ON resistances, and low OFF−channel leakage current. This bilateral switch/ multiplexer/demultiplexer controls analog and digital voltages that may vary across the full power−supply range (from V

to GND).

CC

The HC4066A is identical in pinout to the metal−gate CMOS MC14016 and MC14066. Each device has four independent switches. The device has been designed so the ON resistances (R linear over input voltage than R

of metal−gate CMOS analog

ON

) are more

ON

switches.

The ON/OFF control inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. For analog switches with voltage−level translators, see the HC4316A.

Features

• Fast Switching and Propagation Speeds

• High ON/OFF Output Voltage Ratio

• Low Crosstalk Between Switches

• Diode Protection on All Inputs/Outputs

• Wide Power−Supply Voltage Range (V

• Analog Input Voltage Range (V

CC

− GND) = 2.0 to 12.0 Volts

CC

− GND) = 2.0 to 12.0 Volts

• Improved Linearity and Lower ON Resistance over Input Voltage

than the MC14016 or MC14066

• Low Noise

• Chip Complexity: 44 FETs or 11 Equivalent Gates

• Pb−Free Packages are Available*

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MARKING

DIAGRAMS

14

PDIP−14

4

1

14

1

14

1

14

1

N SUFFIX

CASE 646

SOIC−14

D SUFFIX

CASE 751A

TSSOP−14 DT SUFFIX

CASE 948G

SOEIAJ−14

F SUFFIX

CASE 965

MC74HC4066AN

AWLYYWWG

1

14

HC4066AG

AWLYWW

1

14

HC40

66A

ALYW

1

14

74HC4066A

ALYWG

1



*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

June, 2005 − Rev. 7

1 Publication Order Number:

A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or  = Pb−Free Package (Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

MC74HC4066A/D

MC74HC4066A

LOGIC DIAGRAM

PIN ASSIGNMENT

X Y Y X

B ON/OFF CONTROL C ON/OFF CONTROL

GND

On/Off Control State of

Input Analog Switch

1

A

2

A

3

B

4

B

6

7

V

14

CC

A ON/OFF CONTROL

13

D ON/OFF CONTROL

12

11

X

D

Y

105

D

9

Y

C

8

X

C

FUNCTION TABLE

LOff

HOn

A ON/OFF CONTROL

B ON/OFF CONTROL

C ON/OFF CONTROL

D ON/OFF CONTROL

1 2

X

A

13

4 3

X

B

5 8 9

X

C

6

11 10

X

D

12

ANALOG INPUTS/OUTPUTS = XA, XB, XC, X PIN 14 = V PIN 7 = GND

CC

Y

A

Y

B

ANALOG OUTPUTS/INPUTS

Y

C

Y

D

ORDERING INFORMATION

Device Package Shipping

MC74HC4066AN PDIP−14 MC74HC4066ANG PDIP−14

500 Units / Rail

(Pb−Free) MC74HC4066AD SOIC−14 MC74HC4066ADG SOIC−14

55 Units / Rail

(Pb−Free) MC74HC4066ADR2 SOIC−14 MC74HC4066ADR2G SOIC−14

(Pb−Free)

2500 Tape & Reel

MC74HC4066ADTR2 TSSOP−14* MC74HC4066ADTR2G TSSOP−14* MC74HC4066AFEL SOEIAJ−14 MC74HC4066AFELG SOEIAJ−14

2000 Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*This package is inherently Pb−Free.

†

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2

MC74HC4066A

Î

l

Î

MAXIMUM RATINGS

Symbol

V

ÎÎ

Positive DC Supply Voltage (Referenced to GND)

CC

V

Analog Input Voltage (Referenced to GND)

IS

V

Digital Input Voltage (Referenced to GND)

in

I

DC Current Into or Out of Any Pin

P

Power Dissipation in Still Air, Plastic DIP†

D

ОООООООООООО

T

Storage Temperature

stg

T

Lead Temperature, 1 mm from Case for 10 Seconds

L

ОООООООООООО

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. I f these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. †Derating − Plastic DIP: – 10 mW/°C from 65° to 125°C

EIAJ/SOIC Package: – 7 mW/°C from 65° to 125°C TSSOP Package: − 6.1 mW/°C from 65° to 125°C

For high frequency or heavy load considerations, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

V

VIO*

ÎÎ

*For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may be drawn; i.e., the current out of the switch may

contain both V

Positive DC Supply Voltage (Referenced to GND)

CC

V

Analog Input Voltage (Referenced to GND)

IS

V

Digital Input Voltage (Referenced to GND)

in

Static or Dynamic Voltage Across Switch

T

Operating Temperature, All Package Types

A

tr, t

Input Rise and Fall Time, ON/OFF Control

f

ООООООООООООООО

Inputs (Figure 10) V

ООООООООООООООО

and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.

CC

Parameter

EIAJ/SOIC Package†

TSSOP Package†

(Plastic DIP, SOIC or TSSOP Package)

Parameter

Value

– 0.5 to + 14.0 – 0.5 to VCC + 0.5 – 0.5 to VCC + 0.5

± 25

750 500

ÎÎÎÎ

450

– 65 to + 150

260

ÎÎÎÎ

= 2.0 V

CC

= 3.0 V

V

CC

V

= 4.5 V

CC

V

= 9.0 V

CC

V

= 12.0 V

CC

Unit

V V V

mA

mW

Î

°C °C

Î

Min

2.0 GND GND

−

–55

ООООО

0 0 0 0 0

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, V

should be constrained to the

V

out

range GND v (V

in

or V

) v VCC.

out

in

and

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V

CC

Unused outputs must be left open. I/O pins must be connected to a properly terminated line or bus.

Max

12.0 V

CC

V

CC

1.2

+ 125

ÎÎÎÎ

1000

600

ÎÎÎÎ

500

ÎÎÎÎ

400 250

ÎÎÎÎ

Unit

Î

V V V

V °C ns

).

DC ELECTRICAL CHARACTERISTIC Digital Section (Voltages Referenced to GND)

ÎÎ

Symbo

V

IH

ÎÎ

V

ÎÎ

I

in

ÎÎ

I

CC

ОООООООО

Parameter

Minimum High−Level Voltage ON/OFF Control Inputs

ОООООООО

Maximum Low−Level Voltage

IL

ON/OFF Control Inputs

ОООООООО

Maximum Input Leakage Current ON/OFF Control Inputs

ОООООООО

Maximum Quiescent Supply Current (per Package)

ОООООО

Test Conditions

Ron = Per Spec

ОООООО

Ron = Per Spec

ОООООО

Vin = VCC or GND

ОООООО

Vin = VCC or GND

= 0 V

V

IO

ÎÎ

V

CC

ÎÎ

V

2.0

3.0

ÎÎ

4.5

ÎÎ

9.0

12.0

ÎÎ

2.0

3.0

ÎÎ

4.5

9.0

ÎÎ

12.0

ÎÎ

6.0

12.0

NOTE:Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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3

Guaranteed Limit

ООООООО

– 55 to

ÎÎ

25°C

1.5

2.1

ÎÎ

3.15

ÎÎ

6.3

8.4

ÎÎ

0.5

0.9

ÎÎ

1.35

2.7

ÎÎ

3.6

± 0.1

ÎÎ

2 4

Î

v 85°C

1.5

2.1

Î

3.15

Î

6.3

8.4

Î

0.5

0.9

Î

1.35

2.7

Î

3.6

± 1.0

Î

20 40

ÎÎ

v 125°C

1.5

2.1

ÎÎ

3.15

ÎÎ

6.3

8.4

ÎÎ

0.5

0.9

ÎÎ

1.35

2.7

ÎÎ

3.6

± 1.0

ÎÎ

40

160

Î

Unit

Î

V

A

MC74HC4066A

Î

l

Î

l

Î

DC ELECTRICAL CHARACTERISTICS Analog Section (Voltages Referenced to GND)

Guaranteed Limit

ÎÎ

Symbo

R

on

ÎÎ

R

on

ÎÎ

ОООООООО

Parameter

Maximum “ON” Resistance

ОООООООО

Maximum Difference in “ON” Resistance Between Any Two Channels in the Same Package

ОООООООО

ОООООО

Test Conditions

Vin = V

IH

ОООООО

VIS = VCC to GND

v 2.0 mA (Figures 1, 2)

I

S

ОООООО

Vin = V

IH

VIS = VCC or GND

ОООООО

(Endpoints)

ОООООО

IS v 2.0 mA (Figures 1, 2)

ОООООО

Vin = V

IH

VIS = 1/2 (VCC − GND)

v 2.0 mA

I

ОООООО

S

V

ÎÎ

CC

V

2.0†

ÎÎ

3.0†

4.5

ÎÎ

9.0

ÎÎ

12.0

2.0

3.0

ÎÎ

4.5

ÎÎ

9.0

12.0

ÎÎ

2.0

4.5

9.0

ÎÎ

12.0

I

off

ÎÎ

I

on

ÎÎ

Maximum Off−Channel Leakage

ОООООООО

Current, Any One Channel

ОООООООО

Maximum On−Channel Leakage Current, Any One Channel

ОООООООО

Vin = V

IL

ОООООО

VIO = VCC or GND Switch Off (Figure 3)

ОООООО

Vin = V

IH

VIS = VCC or GND

ОООООО

(Figure 4)

12.0

ÎÎ

12.0

ÎÎ

†At supply voltage (VCC) approaching 3 V the analog switch−on resistance becomes extremely non−linear. Therefore, for low−voltage

operation, it is recommended that these devices only be used to control digital signals.

NOTE:Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

– 55 to

25°C

−

ÎÎ

−

120

ÎÎ

70

ÎÎ

70

−

ÎÎ

70

ÎÎ

50 50

ÎÎ

− 20 15

ÎÎ

15

0.1

ÎÎ

0.1

ÎÎ

v 85°C

−

Î

−

160

Î

85

Î

85

−

Î

85

Î

60 60

Î

− 25 20

Î

20

0.5

Î

0.5

Î

v 125°C

−

ÎÎ

−

200

ÎÎ

100

ÎÎ

100

−

ÎÎ

120

ÎÎ

80 80

ÎÎ

− 30 25

ÎÎ

25

1.0

ÎÎ

1.0

ÎÎ

Î

Unit

Î



A

AC ELECTRICAL CHARACTERISTICS (C

ÎÎ

Symbo

t

PLH

t

PHL

ÎÎ

t

PLZ

t

PHZ

ÎÎ

t

PZL

t

PZH

ÎÎ

C

ÎÎ

ООООООООООООООО

,

Maximum Propagation Delay, Analog Input to Analog Output

(Figures 8 and 9)

ООООООООООООООО

,

Maximum Propagation Delay, ON/OFF Control to Analog Output

Parameter

(Figures 10 and 11)

ООООООООООООООО

,

Maximum Propagation Delay, ON/OFF Control to Analog Output

(Figures 10 and 1 1)

ООООООООООООООО

Maximum Capacitance ON/OFF Control Input

ООООООООООООООО

= 50 pF, ON/OFF Control Inputs: tr = tf = 6 ns)

L

ÎÎ

V

CC

ÎÎ

V

2.0

3.0

ÎÎ

4.5

ÎÎ

9.0

12.0

ÎÎ

2.0

3.0

4.5

ÎÎ

9.0

ÎÎ

12.0

2.0

3.0

ÎÎ

4.5

ÎÎ

9.0

12.0

ÎÎ

−

Control Input = GND

Analog I/O

Feedthrough

−

ÎÎ

−

Guaranteed Limit

– 55 to

ÎÎ

25°C

40 30

ÎÎ

10

ÎÎ

10 10

ÎÎ

80 60 30

ÎÎ

25

ÎÎ

25 80

45

ÎÎ

25

ÎÎ

25 25

ÎÎ

10

35

ÎÎ

1.0

Î

v 85°C

50 40

Î

13

Î

13 13

Î

90 70 38

Î

28

Î

28 90

50

Î

32

Î

32 32

Î

10

35

Î

1.0

ÎÎ

v 125°C

ÎÎ

NOTES:

1. For propagation delays with loads other than 50 pF, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

2. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

60 50 15 15 15

110

80 45 30 30

100

60 37 37 37

10

35

1.0

Î

Unit

Î

ns

pF

C

* Used to determine the no−load dynamic power consumption: PD = CPD V

Semiconductor High−Speed CMOS Data Book (DL129/D).

Power Dissipation Capacitance (Per Switch) (Figure 13)*

PD

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Typical @ 25°C, VCC = 5.0 V

15

2

f + ICC VCC. For load considerations, see the ON

CC

pF

4

MC74HC4066A

Î

ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)

ÎÎ

Symbol

BW

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

THD

ÎÎ

*Guaranteed limits not tested. Determined by design and verified by qualification.

ОООООООО

Parameter

Maximum On−Channel Bandwidth or Minimum Frequency Response

ОООООООО

(Figure 5)

ОООООООО

Off−Channel Feedthrough Isolation

(Figure 6)

ОООООООО

Feedthrough Noise, Control to Switch

ОООООООО

(Figure 7)

ОООООООО

Crosstalk Between Any Two

ОООООООО

Switches

(Figure 12)

ОООООООО

Total Harmonic Distortion

(Figure 14)

ОООООООО

ОООООООООООО

Test Conditions

fin = 1 MHz Sine Wave Adjust f Increase fin Frequency Until dB Meter Reads – 3 dB

Voltage to Obtain 0 dBm at V

ОООООООООООО

in

ОООООООООООО

R

OS

= 50 , CL = 10 pF

L

fin  Sine Wave Adjust f

Voltage to Obtain 0 dBm at V

ОООООООООООО

in

IS

fin = 10 kHz, RL = 600 , CL = 50 pF

ОООООООООООО

fin = 1.0 MHz, RL = 50 , CL = 10 pF

Vin v 1 MHz Square Wave (tr = tf = 6 ns) Adjust R

ОООООООООООО

at Setup so that IS = 0 A

L

R

= 600 , CL = 50 pF

L

RL = 10 k, CL = 10 pF

ОООООООООООО

fin  Sine Wave

ОООООООООООО

Adjust f

Voltage to Obtain 0 dBm at V

in

ОООООООООООО

fin = 10 kHz, RL = 600 , CL = 50 pF

IS

fin = 1.0 MHz, RL = 50 , CL = 10 pF

ОООООООООООО

fin = 1 kHz, RL = 10 k, CL = 50 pF THD = THD

ОООООООООООО

Measured

− THD

Source

VIS = 4.0 VPP sine wave V

= 8.0 VPP sine wave

IS

V

= 11.0 VPP sine wave

IS

V

CC

Î

V

4.5

9.0

Î

12.0

Î

4.5

9.0

Î

12.0

4.5

Î

9.0

12.0

Î

4.5

9.0

Î

12.0

4.5

9.0

Î

12.0

4.5

Î

9.0

12.0

Î

4.5

9.0

Î

12.0

Î

4.5

Î

9.0

12.0

Î

Limit*

25°C

ÎÎ

54/74HC

150 160

ÎÎ

160

ÎÎ

− 50

ÎÎ

− 50

− 40

ÎÎ

− 40

ÎÎ

60

130

ÎÎ

200

30 65

ÎÎ

100

– 70

ÎÎ

– 70 – 70

ÎÎ

– 80 – 80

ÎÎ

– 80

ÎÎ

0.10

ÎÎ

0.06

0.04

ÎÎ

Î

Unit

MHz

Î

mV

Î

dB

PP

dB

%

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5