ON Semiconductor MC34164, MC33164, NCV33164 Technical data

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MC34164, MC33164, NCV33164
Micropower Undervoltage Sensing Circuits
Applications include direct monitoring of the 3.0 V or 5.0 V MPU/logic power supply used in appliance, automotive, consumer, and industrial equipment.
Temperature Compensated Reference
Monitors 3.0 V (MC34164−3) or 5.0 V (MC34164−5) Power Supplies
Precise Comparator Thresholds Guaranteed Over Temperature
Comparator Hysteresis Prevents Erratic Reset
Reset Output Capable of Sinking in Excess of 6.0 mA
Internal Clamp Diode for Discharging Delay Capacitor
Guaranteed Reset Operation With 1.0 V Input
Extremely Low Standby Current: As Low as 9.0 A
Economical TO−226AA, TSOP−5, SOIC−8 and Micro8 Surface
Mount Packages
NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
Pb−Free Packages are Available
Input
Reset
1
2
3
TO−226AA
P SUFFIX
CASE 29
8
1
Micro8 DM SUFFIX CASE 846A
TSOP−5
Pin 1. Ground
2. Input
3. Reset
4. NC
5. NC
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PIN CONNECTIONS
Reset
Input
N.C.
Ground
1
2
3
4
(Top View)
8
7
6
5
8
1
SOIC−8 D SUFFIX CASE 751
1
TSOP−5
SN SUFFIX
CASE 483
N.C.
N.C.
N.C.
N.C.
TO−226AA
Pin 1. Reset
2. Input
3. Ground
1.2 V
ref
GND
Figure 1. Representative Block Diagram
This device contains 28 active transistors.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 16
See detailed ordering and shipping information in the package
ORDERING INFORMATION
dimensions section on page 7 of this data sheet.
Sink Only
=
Positive True Logic
1 Publication Order Number:
DEVICE MARKING INFORMATION
See general marking information in the device marking section on page 9 of this data sheet.
MC34164/D
MC34164, MC33164, NCV33164
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Input Supply Voltage V Reset Output Voltage V Reset Output Sink Current I
in O
Sink
Clamp Diode Forward Current, Reset to Input Pin (Note 1) IF 100 mA Power Dissipation and Thermal Characteristics
P Suffix, Plastic Package
Maximum Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Air
P
D
R
JA
D Suffix, Plastic Package
Maximum Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Air
DM Suffix, Plastic Package
Maximum Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Air
Operating Junction Temperature T Operating Ambient Temperature Range
P
D
R
JA
P
D
R
JA J
T
A
MC34164 Series MC33164 Series, NCV33164
Storage Temperature Range T
Electrostatic Discharge Sensitivity (ESD)
stg
ESD Human Body Model (HBM) Machine Model (MM)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MC34164−3, MC33164−3 SERIES, NCV33164−3 ELECTRICAL CHARACTERISTICS
(For typical values T
range that applies [Notes 2 & 3], unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
COMPARATOR
Threshold Voltage
High State Output (Vin Increasing) Low State Output (Vin Decreasing) Hysteresis (I
= 100 A)
Sink
RESET OUTPUT
Output Sink Saturation
(Vin = 2.4 V, I (Vin = 1.0 V, I
= 1.0 mA)
Sink
= 0.25 mA)
Sink
Output Sink Current (Vin, Reset = 2.4 V) I Output Off−State Leakage
(Vin, Reset = 3.0 V) (Vin, Reset = 10 V)
Clamp Diode Forward Voltage, Reset to Input Pin (IF = 5.0 mA) V
TOTAL DEVICE
Operating Input Voltage Range V Quiescent Input Current
V
= 3.0 V
in
Vin = 6.0 V
1. Maximum package power dissipation limits must be observed.
2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
3. T
= 0°C for MC34164 T
low
=−40°C for MC33164, NCV33164 = +125°C for MC33164, NCV33164
= +70°C for MC34164
high
= 25°C, for min/max values TA is the operating ambient temperature
A
V
IH
V
IL
V
H
V
OL
2.55
2.55
0.03
Sink
I
R(leak)
6.0 12 30 mA
F
in
I
in
0.6 0.9 1.2 V
1.0 to 10 V
−1.0 to 12 V
−1.0 to 12 V Internally
mA
Limited
700 178
700 178
520 240
mW
°C/W
mW
°C/W
mW
°C/W
+150 °C
°C
0 to +70
− 40 to +125
− 65 to +150 °C
4000
200
2.71
2.65
0.06
0.14
0.1
0.02
0.02
9.0 24
2.80
2.80
0.4
0.3
0.5
1.0
15 40
V
V
V
A
A
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MC34164, MC33164, NCV33164
MC34164−5, MC33164−5 SERIES, NCV33164−5 ELECTRICAL CHARACTERISTICS
(For typical values T
range that applies [Notes 5 & 6], unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
COMPARATOR
Threshold Voltage
High State Output (V
Increasing)
in
Low State Output (Vin Decreasing) Hysteresis (I
= 100 A)
Sink
RESET OUTPUT
Output Sink Saturation
(Vin = 4.0 V, I (Vin = 1.0 V, I
= 1.0 mA)
Sink
= 0.25 mA)
Sink
Output Sink Current (Vin, Reset = 4.0 V) I Output Off−State Leakage
(Vin, Reset = 5.0 V) (Vin, Reset = 10 V)
Clamp Diode Forward Voltage, Reset to Input Pin (IF = 5.0 mA) V
TOTAL DEVICE
Operating Input Voltage Range V Quiescent Input Current
Vin = 5.0 V Vin = 10 V
4. Maximum package power dissipation limits must be observed.
5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
6. T
= 0°C for MC34164 T
low
=−40°C for MC33164, NCV33164 = +125°C for MC33164, NCV33164
high
7. NCV prefix is for automotive and other applications requiring site and change control.
= 25°C, for min/max values TA is the operating ambient temperature
A
= +70°C for MC34164
V
IH
V
IL
V
H
V
OL
Sink
I
R(leak)
F
in
I
in
4.15
4.15
0.02
4.33
4.27
0.09
0.14
0.1
4.45
4.45
7.0 20 50 mA
0.02
0.02
0.6 0.9 1.2 V
1.0 to 10 V
12 32
V
V
0.4
0.3
A
0.5
2.0
A
20 50
10
8.0
6.0
4.0
, OUTPUT VOLTAGE (V)
O
2.0
V
0
RL = 82 k to V TA = 25°C
0
2.0 4.0 6.0 8.0 10
in
Vin, INPUT VOLTAGE (V)
Figure 2. MC3X164−3 Reset Output
Voltage versus Input Voltage
10
8.0
6.0
4.0
, OUTPUT VOLTAGE (V)
O
2.0
V
0
0
RL = 82 k to V TA = 25°C
2.0 4.0 6.0 8.0 10
in
Vin, INPUT VOLTAGE (V)
Figure 3. MC3X164−5 Reset Output
Voltage versus Input Voltage
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MC34164, MC33164, NCV33164
O
O
G
(
)
, OUTPUT VOLTAGE (V) V
5.0
4.0
3.0
2.0
O
1.0
0
4.22
RL = 82 k to V TA = 25°C
4.26 4.30 4.34 4.38
Vin, INPUT VOLTAGE (V)
in
Figure 5. MC3X164−5 Reset Output
Voltage versus Input Voltage
4.36
4.32
4.28
Upper Threshold
High State Output
5.0
4.0
V E
LTA
3.0
2.0
UTPUT V ,
O
1.0
V
0
2.62
2.66 2.70 2.74 2.78
Vin, INPUT VOLTAGE (V)
RL = 82 k to V TA = 25°C
in
Figure 4. MC3X164−3 Reset Output
2.76
2.72
2.68
Voltage versus Input Voltage
Upper Threshold
High State Output
, THRESHOLD VOLTAGE (V) V
μ
, INPUT CURRENT ( A) I
2.64
in
2.60
−50
−25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Lower Threshold
Low State Output
Figure 6. MC3X164−3 Comparator Threshold
Voltage versus Temperature
50
40
30
20
in
10
0
0
TA = 0°C
2.0 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (V)
TA = 25°C
TA = 70°C
, THRESHOLD VOLTAGE (V) V
4.24
in
4.20
−50
Lower Threshold
Low State Output
−25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 7. MC3X164−5 Comparator Threshold
Voltage versus Temperature
50
40
μ
30
20
, INPUT CURRENT ( A)
in
I
10
0
0
2.0 4.0 6.0 8.0 10
TA = 0°C
Vin, INPUT VOLTAGE (V)
TA = 25°C
TA = 70°C
Figure 8. MC3X164−3 Input Current
versus Input Voltage
Figure 9. MC3X164−5 Input Current
versus Input Voltage
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MC34164, MC33164, NCV33164
, OUTPUT SATURATION (V)
OL
V
, FORWARD CURRENT (mA)
F
I
4.0
Vin = 2.4 V
3.0
2.0
1.0
0
0
TA = 25°C
TA = 0°C
TA = 70°C
4.0 8.0 12 16
V
, SINK CURRENT (mA)
Sink
TA = 70°C
Figure 10. MC3X164−3 Reset Output
Saturation versus Sink Current
32
Vin = 0 V TA = 25°C
0.4 0.8 1.2 1.6
, FORWARD VOLTAGE (V)
V
F
8.0
24
16
0
0
Figure 12. Clamp Diode Forward Current
versus Voltage
TA = 0°C
TA = 25°C
4.0
Vin, Reset = 4 V
3.0
TA = 25°C
2.0
1.0
0
0
TA = 0°C
TA = 70°C
4.0 8.0 12 16 20
I
, SINK CURRENT (mA)
Sink
, OUTPUT SATURATION (V)
OL
V
20
TA = 25°C
TA = 70°C
TA = 0°C
Figure 11. MC3X164−5 Reset Output
Saturation versus Sink Current
Vin = 5.0 V to 4.0 V RL = 43 k TA = 25°C
90%
5.0 V
4.0 V
Reset
V
in
V
in
5.0V
4.0V
10
%
Ref
43k
Reset
5.0 s/DIV
Figure 13. Reset Delay Time
(MC3X164−5 Shown)
Input
Power
Supply
1.2 V
ref
GND
A time delayed reset can be accomplished with the addition of C supply rise times (<500 ns) it is recommended that the RCDLY time constant be greater than 5.0 s. V the microprocessor reset input threshold.
Reset
R
Reset
C
DLY
t
= R
DLY
CDLY
. For systems with extremely fast power
DLY
Microprocessor
Circuit
In
ǒǓ
1 −
Figure 14. Low Voltage Microprocessor Reset
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1
V
th(MPU)
V
th(MPU)
in
is
MC34164, MC33164, NCV33164
Test Data
V
th
(mV)
0
1.0
1.0
1.0
2.2
2.2
2.2
4.7
4.7
4.7
4.7
4.7
R
()
0 100 100 100 220 220 220 470 470 470 470 470
R
H
L
(k)
43 10
6.8
4.3 10
6.8
4.3 10
8.2
6.8
5.6
4.3
Power
Supply
R
I
in
MC3X164−5
H
1.2 V
V
V
in
R
L
Microprocessor
Reset
Circuit
H
(mV)
60 103 123 160 155
ref
GND
4.3 R
V
V
H
th(lower)
H
+ 0.06
R
L
10 RH x 10
where: RH 1.0 k
43 k≥ RL 4.3 k
−6
199 280 262 306 357 421 530
Comparator hysteresis can be increased with the addition of resistor RH. The hysteresis equation has been simplified and does not account for the change of input current Iin as Vin crosses the comparator threshold (Figure 8). An increase of the lower threshold V equations are accurate to ±10% with RH less than 1.0 k and RL between 4.3 k and 43 k.
will be observed due to Iin which is typically 10 A at 4.3 V. The
th(lower)
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis
(MC3X164−5 Shown)
Input
1.2 V
Reset
Solar Cells
ref
GND
Power
Supply
Input
1.2 V
1.0 k
Reset
ref
GND
Figure 16. Voltage Monitor Figure 17. Solar Powered Battery Charger
V
CC
R
L
4.3V
270
MTP3055EL
Input
Reset
Overheating of the logic level power MOSFET due to insufficient gate voltage can be prevented with the above circuit. When the input signal is below the 4.3 V threshold of the MC3X164−5, its
1.2 V
ref
GND
MC3X164−5
output grounds the gate of the L2 MOSFET.
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164−5
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MC34164, MC33164, NCV33164
ORDERING INFORMATION
Device Package Shipping
MC33164D−3 SOIC−8 MC33164D−3G SOIC−8
(Pb−Free) MC33164D−3R2 SOIC−8 MC33164D−3R2G SOIC−8
(Pb−Free) NCV33164D−3R2* SOIC−8 NCV33164D−3R2G* SOIC−8
(Pb−Free) MC33164DM−3R2 Micro8 MC33164DM−3R2G Micro8
(Pb−Free) MC33164P−3 TO−92 MC33164P−3G TO−92
(Pb−Free) MC33164P−3RA TO−92 MC33164P−3RAG TO−92
(Pb−Free) MC33164P−3RP TO−92 MC33164P−3RPG TO−92
(Pb−Free) MC33164D−5 SOIC−8 MC33164D−5G SOIC−8
(Pb−Free) MC33164D−5R2 SOIC−8 MC33164D−5R2G SOIC−8
(Pb−Free) NCV33164D−5R2* SOIC−8 NCV33164D−5R2G* SOIC−8
(Pb−Free) MC33164DM−5R2 Micro8 MC33164DM−5R2G Micro8
(Pb−Free) MC33164P−5 TO−92 MC33164P−5G TO−92
(Pb−Free) MC33164P−5RA TO−92 MC33164P−5RAG TO−92
(Pb−Free) MC33164P−5RP TO−92 MC33164P−5RPG TO−92
(Pb−Free) MC34164D−3 SOIC−8 MC34164D−3G SOIC−8
(Pb−Free) MC34164D−3R2 SOIC−8 MC34164D−3R2G SOIC−8
(Pb−Free)
98 Units / Rail
2500 Units / Tape & Reel
4000 Units / Tape & Reel
2000 Units / Box
2000 Units / Tape & Reel
2000 Units / Pack
98 Units / Rail
2500 Units / Tape & Reel
4000 Units / Tape & Reel
2000 Units / Box
2000 Units / Tape & Reel
2000 Units / Pack
98 Units / Rail
2500 Units / Tape & Reel
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MC34164, MC33164, NCV33164
ORDERING INFORMATION
Device Shipping
MC34164DM−3R2 Micro8 MC34164DM−3R2G Micro8
MC34164P−3 TO−92 2000 Units / Box MC34164P−3G TO−92
MC34164P−3RP TO−92 2000 Units / Pack MC34164P−3RPG TO−92
MC34164D−5 SOIC−8 MC34164D−5G SOIC−8
MC34164D−5R2 SOIC−8 2500 Units / Tape & Reel MC34164D−5R2G SOIC−8
MC34164DM−5R2 Micro8 4000 Units / Tape & Reel MC34164DM−5R2G Micro8
MC34164SN−5T1 TSOP−5 MC34164SN−5T1G TSOP−5
MC34164P−5 TO−92 2000 Units / Box MC34164P−5G TO−92
MC34164P−5RA TO−92 MC34164P−5RAG TO−92
MC34164P−5RP TO−92 2000 Units / Pack MC34164P−5RPG TO−92
*NCV33164: T
site and change control.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
= −40°C, T
low
= +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
high
Package
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
4000 Units / Tape & Reel
2000 Units / Box
2000 Units / Pack
98 Units / Rail
2500 Units / Tape & Reel
4000 Units / Tape & Reel
3000 Units / Tape & Reel
2000 Units / Box
2000 Units / Tape & Reel
2000 Units / Pack
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MC34164, MC33164, NCV33164
TSOP−5
SN SUFFIX
CASE 483
54
SRCYWG
123
PIN CONNECTIONS AND MARKING DIAGRAMS
SOIC−8 D SUFFIX CASE 751
8
3x164
ALYWy
G
1
Micro8
MC33164DM
CASE 846A
8
MIy0
YWW
AWL
1
SRC = Device Code x = Device Number 3 or 4 y = Suffix Number 3 or 5 A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G = Pb−Free
Micro8
MC34164DM
CASE 846A
8
MCy0 YWW
AWL
1
TO−92 MC3x164P−yRA MC3x164P−yRP
MC3x164P−y
CASE 29
MC3x1
64P−y
YWW
123
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SEATING PLANE
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
TO−226AA
P SUFFIX
CASE 29−11
ISSUE AL
A
B
R
P
L
K
XX
H V
1
G
C
N
D
J
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
MILLIMETERSINCHES
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0.05 (0.002)
S
H
D
54
123
L
G
A
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
TSOP−5
SN SUFFIX
PLASTIC PACKAGE
CASE 483−02
ISSUE D
B
J
C
K
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
DIM MIN MAX MIN MAX
A 2.90 3.10 0.1142 0.1220 B 1.30 1.70 0.0512 0.0669 C 0.90 1.10 0.0354 0.0433 D 0.25 0.50 0.0098 0.0197 G 0.85 1.05 0.0335 0.0413 H 0.013 0.100 0.0005 0.0040
J 0.10 0.26 0.0040 0.0102 K 0.20 0.60 0.0079 0.0236 L 1.25 1.55 0.0493 0.0610 M 0 10 0 10
__ _ _
S 2.50 3.00 0.0985 0.1181
INCHESMILLIMETERS
SOLDERING FOOTPRINT*
1.9
0.95
0.037
1.0
0.039
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.074
0.028
0.7
2.4
0.094
SCALE 10:1
ǒ
inches
mm
Ǔ
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−Y−
−Z−
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
SOIC−8
D SUFFIX
CASE 751−07
ISSUE AG
NOTES:
−X− A
58
B
1
S
0.25 (0.010)
4
M
M
Y
K
G
N
C
SEATING PLANE
0.10 (0.004)
H
D
0.25 (0.010) Z
M
Y
SXS
X 45
_
M
J
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.
MILLIMETERS
DIMAMIN MAX MIN MAX
4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050
M 0 8 0 8
____
N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244
INCHES
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
0.6
0.024
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
4.0
0.155
1.270
0.050
SCALE 6:1
ǒ
inches
mm
Ǔ
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SEATING PLANE
−T−
0.038 (0.0015)
PIN 1 ID
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
Micro8
DM SUFFIX
CASE 846A−02
ISSUE F
−A−
K
G
−B−
D
8 PL
0.08 (0.003) A
M
T
S
B
S
C
H
J
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.
DIM MIN MAX MIN MAX
A 2.90 3.10 0.114 0.122 B 2.90 3.10 0.114 0.122 C −−− 1.10 −−− 0.043 D 0.25 0.40 0.010 0.016 G 0.65 BSC 0.026 BSC H 0.05 0.15 0.002 0.006
J 0.13 0.23 0.005 0.009
K 4.75 5.05 0.187 0.199
L 0.40 0.70 0.016 0.028
INCHESMILLIMETERS
SOLDERING FOOTPRINT*
1.04
8X
0.041
3.20
0.126
0.65
6X
0.0256
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.38
0.015
8X
4.24
0.167
5.28
0.208
SCALE 8:1
ǒ
inches
mm
Ǔ
http://onsemi.com
13
MC34164, MC33164, NCV33164
Micro8 is a trademark of International Rectifier.
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MC34164/D
14
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