ON Semiconductor MC33178, MC33179 Technical data

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MC33178, MC33179

Low Power, Low Noise Operational Amplifiers

The MC33178/9 series is a family of high quality monolithic amplifiers employing Bipolar technology with innovative high performance concepts for quality audio and data signal processing applications. This device family incorporates the use of high frequency PNP input transistors to produce amplifiers exhibiting low input offset voltage, noise and distortion. In addition, the amplifier provides high output current drive capability while consuming only 420 mA of drain current per amplifier. The NPN output stage used, exhibits no deadband crossover distortion, large output voltage swing, excellent phase and gain margins, low open−loop high frequency output impedance, symmetrical source and sink AC frequency performance.

The MC33178/9 family offers both dual and quad amplifier versions in several package options.

Features

• 600 W Output Drive Capability

• Large Output Voltage Swing

• Low Offset Voltage: 0.15 mV (Mean)

• Low T.C. of Input Offset Voltage: 2.0 mV/°C

• Low Total Harmonic Distortion: 0.0024%

(@ 1.0 kHz w/600 W Load)

• High Gain Bandwidth: 5.0 MHz

• High Slew Rate: 2.0 V/ms

• Dual Supply Operation: ±2.0 V to ±18 V

• ESD Clamps on the Inputs Increase Ruggedness without Affecting

Device Performance

• Pb−Free Packages are Available

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DUAL

QUAD

PDIP−8

P SUFFIX

CASE 626

SOIC−8 D SUFFIX CASE 751

Micro8 DM SUFFIX CASE 846A

PDIP−14

P SUFFIX

CASE 646

SOIC−14

D SUFFIX

CASE 751A

ref

Vin −

Figure 1. Representative Schematic Diagram

(Each Amplifier)

October, 2005 − Rev. 6

Vin +

ref

1 Publication Order Number:

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

DEVICE MARKING INFORMATION

See general marking information in the device marking section on page 4 of this data sheet.

TSSOP−14

DTB SUFFIX

CASE 948G

MC33178/D

MC33178, MC33179

MAXIMUM RATINGS

Rating Symbol Value Unit

Supply Voltage (VCC to V

EE)

Input Differential Voltage Range V Input Voltage Range V Output Short Circuit Duration (Note 2) t Maximum Junction Temperature T Storage Temperature Range T Maximum Power Dissipation P Operating Temperature Range T

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. Either or both input voltages should not exceed VCC or VEE.

2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. (See power dissipation performance characteristic, Figure 2.)

IDR

stg

+36 V Note 1 V Note 1 V

Indefinite sec

+150 °C

−60 to +150 °C

Note 2 mW

−40 to +85 °C

ORDERING INFORMATION

Device Package Shipping

MC33178D SOIC−8 98 Units / Rail MC33178DG SOIC−8

(Pb−Free)

98 Units / Rail

MC33178DR2 SOIC−8 2500 / Tape & Reel MC33178DR2G SOIC−8

(Pb−Free)

2500 / Tape & Reel

MC33178P PDIP−8 1000 Units / Rail MC33178PG PDIP−8

(Pb−Free)

1000 Units / Rail

MC33178DMR2 Micro8 4000 / Tape & Reel MC33178DMR2G Micro8

(Pb−Free)

4000 / Tape & Reel

MC33179D SOIC−14 55 Units / Rail MC33179DG SOIC−14

(Pb−Free)

55 Units / Rail

MC33179DR2 SOIC−14 2500 / Tape & Reel MC33179DR2G SOIC−14

(Pb−Free)

2500 / Tape & Reel

MC33179P PDIP−14 500 Units / Rail MC33179PG PDIP−14

(Pb−Free)

MC33179DTBR2G TSSOP−14

(Pb−Free)

500 Units / Rail

2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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MC33178, MC33179

MARKING DIAGRAMS

DUAL QUAD

PDIP−8

CASE 626

MC33178P

AWL

YYWWG

Micro8

CASE 846A

3178

AYWG

SOIC−8

CASE 751

33178 ALYW

A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G, G = Pb−Free Package (Note: Microdot may be in either location)

PIN CONNECTIONS

PDIP−14

CASE 646

MC33179P

AWLYYWWG

SOIC−14

CASE 751A

MC33179DG

AWLYWW

TSSOP−14

CASE 948G

MC33

179

ALYW

DUAL

CASE 626/751/846A

Output 1

Inputs 1

− +

3 4

(Top View)

−

Output 2

6 5

Inputs 2

CASE 646/751A/948G

Output 1

Inputs 1

Inputs 2

Output 2

−−

QUAD

Output 4

−− 1

Inputs 4

Inputs 3

Output 3

(Top View)

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MC33178, MC33179

DC ELECTRICAL CHARACTERISTICS (V

Characteristics

Input Offset Voltage (RS = 50 W, VCM = 0 V, VO = 0 V)

= +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.)

Figure Symbol Min Typ Max Unit

3 |VIO|

(VCC = +2.5 V, VEE = −2.5 V to VCC = +15 V, VEE = −15 V)

TA = +25°C T

= −40° to +85°C

Average Temperature Coefficient of Input Offset Voltage

−

DVIO/DT

0.15

−

3.0

4.0

(RS = 50 W, VCM = 0 V, VO = 0 V)

TA = −40° to +85°C

Input Bias Current (VCM = 0 V, VO = 0 V)

TA = +25°C TA = −40° to +85°C

Input Offset Current (VCM = 0 V, VO = 0 V)

TA = +25°C TA = −40° to +85°C

Common Mode Input Voltage Range

(DVIO = 5.0 mV, VO = 0 V)

Large Signal Voltage Gain (VO = −10 V to +10 V, RL = 600 W)

TA = +25°C TA = −40° to +85°C

Output Voltage Swing (VID = ±1.0 V)

4, 5 I

6 V

7, 8 A

9, 10, 11

|IIO|

ICR

VOL

− 2.0 −

−

−13

−

50 25

100

−

5.0

−

−14 +14

200

−

500 600

50 60

−

+13

−

(VCC = +15 V, VEE = −15 V)

RL = 300 W RL = 300 W RL = 600 W RL = 600 W RL = 2.0 kW RL = 2.0 kW

VO+ VO− VO+ VO− VO+ VO−

−

+12

−

+13

−

+12

−12

+13.6

−13 +14

−13.8

−

−12

−

−13

(VCC = +2.5 V, VEE = −2.5 V)

RL = 600 W RL = 600 W

VO+ VO−

1.1

−

1.6

−1.6

−

−1.1 Common Mode Rejection (Vin = ±13 V) 12 CMR 80 110 − dB Power Supply Rejection

VCC/VEE = +15 V/ −15 V, +5.0 V/ −15 V, +15 V/ −5.0 V

Output Short Circuit Current (VID = ±1.0 V, Output to Ground)

Source (VCC = 2.5 V to 15 V) Sink (VEE = −2.5 V to −15 V)

Power Supply Current (VO = 0 V)

13 PSR

14, 15 I

16 I

80 110 −

+50

−50

+80

−100

−

(VCC = 2.5 V, VEE = −2.5 V to VCC = +15 V, VEE = −15 V)

MC33178 (Dual)

TA = +25°C TA = −40° to +85°C

−

1.4

1.6

MC33179 (Quad)

TA = +25°C TA = −40° to +85°C

−

1.7

−

2.4

2.6

mV/°C

kV/V

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MC33178, MC33179

AC ELECTRICAL CHARACTERISTICS (V

Characteristics

Slew Rate

(Vin = −10 V to +10 V, RL = 2.0 kW, CL = 100 pF, AV = +1.0 V)

= +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.)

Figure Symbol Min Typ Max Unit

17, 32 SR

1.2 2.0 −

V/ms

Gain Bandwidth Product (f = 100 kHz) 18 GBW 2.5 5.0 − MHz AC Voltage Gain (RL = 600 W, VO = 0 V, f = 20 kHz) Unity Gain Bandwidth (Open−Loop) (RL = 600 W, CL = 0 pF) Gain Margin (RL = 600 W, CL = 0 pF) Phase Margin (RL = 600 W, CL = 0 pF)

19, 20 A

21, 23, 24 A 22, 23, 24

BW − 3.0 − MHz

− 50 − dB

− 15 − dB

− 60 − Deg Channel Separation (f = 100 Hz to 20 kHz) 25 CS − −120 − dB Power Bandwidth (VO = 20 V

= 600 W, THD ≤ 1.0%)

pp, RL

Total Harmonic Distortion (RL = 600 W,, VO = 2.0 Vpp, AV = +1.0 V)

26 THD

(f = 1.0 kHz) (f = 10 kHz) (f = 20 kHz)

Open Loop Output Impedance

27 |ZO|

(VO = 0 V, f = 3.0 MHz, AV = 10 V) Differential Input Resistance (VCM = 0 V) R Differential Input Capacitance (VCM = 0 V) C Equivalent Input Noise Voltage (RS = 100 W,)

28 e f = 10 Hz f = 1.0 kHz

Equivalent Input Noise Current

29 i f = 10 Hz f = 1.0 kHz

in in n

− 32 − kHz

−

0.0024

−

0.014

−

0.024

−

− 150 −

− 200 −

− 10 − pF nV/ Hz√

−

8.0

7.5

−

− pA/ Hz√

−

0.33

0.15

−

2400

2000

MC33178P/9P

1600

MC33179D

1200

800

MC33178D

400

P(MAX), MAXIMUM POWER DISSIPATION (mW)

−60 −40 −20 0 20 40 60 80 100 120 180160140 TA, AMBIENT TEMPERATURE (°C)

Figure 2. Maximum Power Dissipation

versus Temperature

4.0

3.0

2.0 Unit 1

VCC = +15 V VEE = −15 V RS = 10 W VCM = 0 V

1.0

Unit 2

Unit 3

−1.0

−2.0

−3.0

V, INPUT OFFSET VOLTAGE (mV)

−4.0

−55 −25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C)

Figure 3. Input Offset Voltage versus

Temperature for 3 Typical Units

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