ON Semiconductor MC33153 Technical data

ON Semiconductor

Single IGBT Gate Driver

The MC33153 is specifically designed as an IGBT driver for high
power applications that include ac induction motor control, brushless
dc motor control and uninterruptable power supplies. Although
designed for driving discrete and module IGBTs, this device offers a
cost effective solution for driving power MOSFETs and Bipolar
Transistors. Device protection features include the choice of
desaturation or overcurrent sensing and undervoltage detection. These
devices are available in dual–in–line and surface mount packages and
include the following features:

• High Current Output Stage: 1.0 A Source/2.0 A Sink

• Protection Circuits for Both Conventional and Sense IGBTs

• Programmable Fault Blanking Time

• Protection against Overcurrent and Short Circuit

• Undervoltage Lockout Optimized for IGBT’s

• Negative Gate Drive Capability

• Cost Effectively Drives Power MOSFETs and Bipolar Transistors

MC33153

SINGLE IGBT

GATE DRIVER

SEMICONDUCTOR

TECHNICAL DATA

8

1

P SUFFIX

PLASTIC PACKAGE

CASE 626

Representative Block Diagram

V

CC

6

V

CC

Short Circuit

Fault

Output

7

Input

4 5

Latch

Q

Overcurrent
Latch

V

EE

V

CC

V

EE

Q

V

CC

S

R

S

R

V

CC

This device contains 133 active transistors.

Short Circuit
Comparator

Overcurrent
Comparator

Fault Blanking/

Desaturation

Comparator

Under
Voltage
Lockout

12 V/
11 V

130 mV

65 mV

V

CC

270 µA

6.5 V

3

V

EE

Output

Stage

100 k

V

EE

V

V

V

V

V

CC

EE

CC

EE

CC

Current
Sense

1

Input

Kelvin
Gnd

2

Fault
Blanking/

8

Desaturation
Input

Drive
Output

Current Sense

Kelvin Gnd

ORDERING INFORMATION

Device

MC33153D
MC33153P

8

1

D SUFFIX

PLASTIC PACKAGE

CASE 751

(SO–8)

PIN CONNECTIONS

18

Input

2

3

V

EE

4

Input

(Top View)

Operating

Temperature Range

= –40° to +105°C

T

A

7

6

5

Fault Blanking/
Desaturation Input

Fault Output

V

CC

Drive Output

Package

SO–8

DIP–8

 Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 3

1 Publication Order Number:

MC33153/D

MC33153

MAXIMUM RATINGS

Rating Symbol Value Unit

Power Supply Voltage V

VCC to V

EE

Kelvin Ground to VEE (Note 1) KGnd – V

Logic Input V
Current Sense Input V
Blanking/Desaturation Input V
Gate Drive Output

Source Current
Sink Current
Diode Clamp Current

Fault Output

Source Current
Sink Current

Power Dissipation and Thermal Characteristics

D Suffix SO–8 Package, Case 751

Maximum Power Dissipation @ T

= 50°C

A

Thermal Resistance, Junction–to–Air

P Suffix DIP–8 Package, Case 626

Maximum Power Dissipation @ T

= 50°C

A

Thermal Resistance, Junction–to–Air
Operating Junction Temperature T
Operating Ambient Temperature T
Storage Temperature Range T

NOTE: ESD data available upon request.

VCC – V

in
S

BD

I

O

I

FO

P

D

R

θ

JA

P

D

R

θ

JA
J

A

stg

EE

EE

20
20

VEE –0.3 to V

–0.3 to V
–0.3 to V

CC
CC
CC

1.0

2.0

1.0

25
10

0.56
180

1.0

100

+150 °C
–40 to +105 °C
–65 to +150 °C

V
V
V
A

mA

W

°C/W

W

°C/W

ELECTRICAL CHARACTERISTICS (V

= 25°C, for min/max values TA is the operating ambient temperature range that applies (Note 2), unless otherwise noted.)

T

A

Characteristic

= 15 V, VEE = 0 V, Kelvin Gnd connected to VEE. For typical values

CC

Symbol Min Typ Max Unit

LOGIC INPUT

Input Threshold Voltage

High State (Logic 1)
Low State (Logic 0)

V

IH

V

IL

1.2

–

2.70

2.30

Input Current

High State (V
Low State (V

= 3.0 V)

IH

= 1.2 V)

IL

I

IH

I

IL

–
–

130

50

DRIVE OUTPUT

Output Voltage

Low State (I
High State (I

Sink

Source

= 1.0 A)

= 500 mA)

Output Pull–Down Resistor R

V

OL

V

OH
PD

–

12

2.0

13.9

– 100 200 kΩ

FAULT OUTPUT

Output voltage

Low State (I
High State (I

= 5.0 mA)

Sink

Source

= 20 mA)

V

FL

V

FH

12

–

0.2

13.3

SWITCHING CHARACTERISTICS

Propagation Delay (50% Input to 50% Output CL = 1.0 nF)

Logic Input to Drive Output Rise

Logic Input to Drive Output Fall
Drive Output Rise Time (10% to 90%) CL = 1.0 nF t
Drive Output Fall Time (90% to 10%) CL = 1.0 nF t

NOTES: 1.Kelvin Ground must always be between VEE and VCC.

2.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
= –40°C for MC33153 T

T

low

= +105°C for MC33153

high

t

PLH(in/out)

t

PHL (in/out)

r

f

–
–

80

120
– 17 55 ns
– 17 55 ns

3.2

V

–

µA
500
100

V

2.5
–

V

1.0
–

ns
300
300

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MC33153

ELECTRICAL CHARACTERISTICS (continued) (V

= 25°C, for min/max values TA is the operating ambient temperature range that applies (Note 2), unless otherwise noted.)

T

A

= 15 V, VEE = 0 V, Kelvin Gnd connected to VEE. For typical values

CC

Characteristic UnitMaxTypMinSymbol

SWITCHING CHARACTERISTICS (continued)

Propagation Delay µs

Current Sense Input to Drive Output t
Fault Blanking/Desaturation Input to Drive Output t

P(OC)
P(FLT)

– 0.3 1.0
– 0.3 1.0

UVLO

Startup Voltage
Disable Voltage V

V

CC start

CC dis

11.3 12 12.6 V

10.4 11 11.7 V

COMPARATORS

Overcurrent Threshold Voltage (V
Short Circuit Threshold Voltage (V
Fault Blanking/Desaturation Threshold (V

> 7.0 V) V

Pin8

> 7.0 V) V

Pin8

> 100 mV) V

Pin1

Current Sense Input Current (VSI = 0 V) I

SOC
SSC

th(FLT)

SI

50 65 80 mV

100 130 160 mV

6.0 6.5 7.0 V
– –1.4 –10 µA

FAULT BLANKING/DESATURATION INPUT

Current Source (V
Discharge Current (V

Pin8

= 0 V, V

= 15 V, V

Pin8

= 0 V) I

Pin4

= 5.0 V) I

Pin4

chg

dschg

–200 –270 –300 µA

1.0 2.5 – mA

TOTAL DEVICE

Power Supply Current

Standby (V
Operating (C

NOTES: 1.Kelvin Ground must always be between VEE and VCC.

2.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.

= VCC, Output Open)

Pin 4

= 1.0 nF, f = 20 kHz)

L

T

= –40°C for MC33153 T

low

= +105°C for MC33153

high

I

CC

–
–

7.2

7.9

14
20

mA

1.5

1.0

0.5

, INPUT CURRENT (mA)

in

I

0

0

2.0 4.0 6.0 8.0 10 12 14 16

Vin, INPUT VOLTAGE (V)

Figure 1. Input Current versus Input Voltage

VCC = 15 V
T

= 25°C

A

16

14

12

10

8.0

6.0

, OUTPUT VOLTAGE (V)

4.0

O

V

2.0

0

0

1.0 2.0 3.0 4.0

Vin, INPUT VOLTAGE (V)

Figure 2. Output Voltage versus Input Voltage

VCC = 15 V
T

= 25°C

A

5.0

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MC33153

, INPUT THRESHOLD VOLTAGE (V)V

- V

3.2
VCC = 15 V

3.0

2.8

V

IH

2.6

2.4

2.2

IL

IH

2.0

-60

-40 -20 0 20 40 60 80 100 120 140

V

IL

T

, AMBIENT TEMPERATURE (°C)

A

Figure 3. Input Threshold Voltage

versus Temperature

2.5

I

= 1.0 A

2.0

Sink

, INPUT THRESHOLD VOLTAGE (V)V

- V

2.8
T

V

IH

= 25°C

A

2.7

2.6

2.5

2.4

V

2.3

IL

IH

2.2

12

13 14 15 16 17 18 19 20

IL

V

, SUPPLY VOLTAGE (V)

CC

Figure 4. Input Threshold Voltage

versus Supply V oltage

2.0

1.6

= 500 mA

1.5

1.2

1.0

0.5

, OUTPUT LOW STATE VOLTAGE (V)

OL

V

0

-60

14.0

13.9

13.8

13.7

13.6

, DRIVE OUTPUT HIGH STATE VOLTAGE (V)

13.5

OH

-60

V

= 250 mA

VCC = 15 V

-40 -20 0 20 40 60 80 100 120 140

T

, AMBIENT TEMPERATURE (°C)

A

Figure 5. Drive Output Low State Voltage

versus Temperature

VCC = 15 V
I

= 500 mA

Source

-40 -20 0 20 40 60 80 100 120 140

T

, AMBIENT TEMPERATURE (°C)

A

Figure 7. Drive Output High State Voltage

versus Temperature

0.8

0.4

, OUTPUT LOW STATE VOLTAGE (V)

OL

V

0

15.0

14.6

14.2

13.8

13.4

, DRIVE OUTPUT HIGH STATE VOLTAGE (V)

13.0

OH

V

0

0.2 0.4 0.6 0.8 1.0

, OUTPUT SINK CURRENT (A)

I

Sink

Figure 6. Drive Output Low State Voltage

versus Sink Current

VCC = 15 V
T

= 25°C

A

0

0.1 0.2 0.3 0.4 0.5

I

, OUTPUT SOURCE CURRENT (A)

Source

Figure 8. Drive Output High State Voltage

versus Source Current

T

= 25°C

A

VCC = 15 V

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MC33153

0

16

14

12

10

8.0

6.0

4.0

, DRIVE OUTPUT VOLTAGE (V)

O

2.0

V

0

70

68

66

50

55 60 65 70 75 80

V

, CURRENT SENSE INPUT VOLTAGE (mV)

Pin 1

Figure 9. Drive Output Voltage

versus Current Sense Input Voltage

VCC = 15 V
V

= 0 V

Pin 4

V

> 7.0 V

Pin 8

T

= 25°C

A

VCC = 15 V

14

12

10

8.0

6.0

4.0

, FAULT OUTPUT VOLTAGE (V)

2.0

Pin 7

V

0
100

70

68

66

VCC = 15 V
V

= 0 V

Pin 4

V

> 7.0 V

Pin 8

T

= 25°C

A

110 120 130 140 150 16

V

, CURRENT SENSE INPUT VOLTAGE (mV)

Pin 1

Figure 10. Fault Output Voltage

versus Current Sense Input Voltage

T

= 25°C

A

64

62

, OVERCURRENT THRESHOLD VOLTAGE (mV)

60

-60

V

SOC

-40 -20 0 20 40 60 80 100 120 140

T

, AMBIENT TEMPERATURE (°C)

A

Figure 11. Overcurrent Protection Threshold

Voltage versus Temperature

135

130

, SHORT CIRCUIT THRESHOLD VOLTAGE (mV)

125

V

SSC

-40 -20 0 20 40 60 80 100 120 140 14 16 18 20

-60

T

, AMBIENT TEMPERATURE (°C)

A

Figure 13. Short Circuit Comparator Threshold

Voltage versus Temperature

VCC = 15 V

64

62

, OVERCURRENT THRESHOLD VOLTAGE (mV)

SOC

V

60

12

14 16 18 20

VCC, SUPPLY VOLTAGE (V)

Figure 12. Overcurrent Protection Threshold

Voltage versus Supply Voltage

135

130

, SHORT CIRCUIT THRESHOLD VOLTAGE (mV)

125

SSC

12

V

V

, SUPPLY VOLTAGE (V)

CC

Figure 14. Short Circuit Comparator Threshold

Voltage versus Supply Voltage

T

= 25°C

A

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MC33153

)

0

µ

VCC = 15 V
T

= 25°C

A

-0.5

16

14

12

10

VCC = 15 V
V

= 0 V

Pin 4

V

> 100 mV

Pin 1

T

= 25°C

A

8.0

-1.0

6.0

4.0

, DRIVE OUTPUT VOLTAGE (V)

O

2.0

, CURRENT SENSE INPUT CURRENT ( A

SI

I

-1.5
0

4.0 6.0 8.0 10 12 14 162.0

V

, CURRENT SENSE INPUT VOLTAGE (V)

Pin 1

Figure 15. Current Sense Input Current

versus V oltage

6.6

VCC = 15 V
V

= 0 V

Pin 4

V

> 100 mV

Pin 1

V

0

6.0

6.2 6.4 6.6 6.8 7.0

V

, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)

Pin 8

Figure 16. Drive Output Voltage versus Fault

Blanking/Desaturation Input Voltage

6.6

V

Pin 4

V

Pin 1

T

= 25°C

A

= 0 V
> 100 mV

6.5

THRESHOLD VOLTAGE (V)

, FAULT BLANKING/DESATURATION

BDT

V

6.4

-60

-20 0 20 40 60 80 100 120 140-40

T

, AMBIENT TEMPERATURE (°C)

A

Figure 17. Fault Blanking/Desaturation Comparator

Threshold Voltage versus Temperature

-200

µ

, CURRENT SOURCE ( A)

I

-220

-240

-260

-280

chg

VCC = 15 V
V

Pin 8

= 0 V

6.5

THRESHOLD VOLTAGE (V)

, FAULT BLANKING/DESATURATION

BDT

V

6.4
12

14 16 18 20

V

, SUPPLY VOLTAGE (V)

CC

Figure 18. Fault Blanking/Desaturation Comparator

Threshold Voltage versus Supply Voltage

-200

V

= 0 V

µ

, CURRENT SOURCE ( A)I

-220

-240

-260

-280

chg

Pin 4

V

Pin 8

T

= 25°C

A

= 0 V

-300

-60

-20 0 20 40 60 80 100 120 140-40 15 2010

T

, AMBIENT TEMPERATURE (°C)

A

Figure 19. Fault Blanking/Desaturation Current

Source versus T emperature

-300

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5.0

V

, SUPPLY VOLTAGE (V)

CC

Figure 20. Fault Blanking/Desaturation Current

Source versus Supply Voltage

MC33153

µ

, CURRENT SOURCE ( A)I

-200

-220

-240

-260

-280

chg

-300

1.0

0.8

0.6

VCC = 15 V
V

= 0 V

Pin 4

T

= 25°C

A

0

V

Pin 8

4.0 6.0 8.0 10 12 14 162.0 4.0 8.0 12 16

, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)

Figure 21. Fault Blanking/Desaturation

Current Source versus Input Voltage

VCC = 15 V
V

= 5.0 V

Pin 4

T

= 25°C

A

2.5

2.0

1.5

1.0

0.5

, DISCHARGE CURRENT (mA)I

dscg

-0.5

0

0

V

, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)

Pin 8

VCC = 15 V
V

Pin 4

T

= 25°C

A

Figure 22. Fault Blanking/Desaturation Discharge

Current versus Input Voltage

14.0

13.8

13.6

VCC = 15 V
V

= 0 V

Pin 4

V

= 1.0 V

Pin 1

Pin 8 = Open
T

= 25°C

A

= 5.0 V

0.4

, FAULT OUTPUT VOLTAGE (V)

0.2

Pin 7

V

0

16

14

12

10

8.0

6.0

4.0

, DRIVE OUTPUT VOLTAGE (V)

O

2.0

V

0

0

2.0 4.0 6.0 8.0 10

I

, OUTPUT SINK CURRENT (mA)

Sink

Figure 23. Fault Output Low State Voltage

versus Sink Current

Turn-Off
Threshold

Startup
Threshold

10

11 12 13 14 15

VCC, SUPPLY VOLTAGE (V)

V

Pin 4

T

= 25°C

A

= 0 V

13.4

, FAULT OUTPUT VOLTAGE (V)

13.2

Pin 7

V

13.0

12.5

12.0

11.5

, UNDERVOLTAGE

11.0

th(UVLO)

LOCKOUT THRESHOLD (V)

V

10.5

0

4.0 6.0 8.0 10 12 14 16 18 202.0

I

, OUTPUT SOURCE CURRENT (mA)

Source

Figure 24. Fault Output High State Voltage

versus Source Current

Startup Threshold
VCC Increasing

Turn-Off Threshold
VCC Decreasing

-60

-20 20 60 100 140-40 0 40 80 120

T

, AMBIENT TEMPERATURE (°C)

A

Figure 25. Drive Output Voltage

versus Supply V oltage

Figure 26. UVLO Thresholds

versus Temperature

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MC33153

, SUPPLY CURRENT (mA)

CC

I

8.0

6.0

4.0

2.0

10

Output High

Output Low

T

= 25°C

A

0

5.0

VCC, SUPPLY VOLTAGE (V)

Figure 27. Supply Current versus

10

8.0

6.0

4.0

, SUPPLY CURRENT (mA)

CC

I

2.0

0

-60

-4010 15

0 20 40 60 80 100 120 14020 -20

T

, AMBIENT TEMPERATURE (°C)

A

VCC = 15 V
V

Pin 4

Drive Output Open

Figure 28. Supply Current versus Temperature

= V

CC

Supply Voltage

, SUPPLY CURRENT (mA)

CC

I

80

60

40

20

VCC = 15 V
T

= 25°C

A

CL = 10 nF

= 5.0 nF

= 2.0 nF

= 1.0 nF

0

1.0

f, INPUT FREQUENCY (kHz)

Figure 29. Supply Current versus Input Frequency

OPERATING DESCRIPTION

GATE DRIVE

Controlling Switching Times

The most important design aspect of an IGBT gate drive
is optimization of the switching characteristics. The
switching characteristics are especially important in motor
control applications in which PWM transistors are used in a
bridge configuration. In these applications, the gate drive
circuit components should be selected to optimize turn–on,
turn–off and off–state impedance. A single resistor may be
used to control both turn–on and turn–off as shown in
Figure 30. However, the resistor value selected must be a
compromise in turn–on abruptness and turn–off losses.
Using a single resistor is normally suitable only for very low
frequency PWM. An optimized gate drive output stage is
shown in Figure 31. This circuit allows turn–on and turn–off
to be optimized separately. The turn–on resistor, R

on

provides control over the IGBT turn–on speed. In motor
control circuits, the resistor sets the turn–on di/dt that
controls how fast the free–wheel diode is cleared. The
interaction of the IGBT and free–wheeling diode determines

100010 100

the turn–on dv/dt. Excessive turn–on dv/dt is a common
problem in half–bridge circuits. The turn–off resistor, R
controls the turn–off speed and ensures that the IGBT
remains off under commutation stresses. Turn–off is critical
to obtain low switching losses. While IGBTs exhibit a fixed
minimum loss due to minority carrier recombination, a slow
gate drive will dominate the turn–off losses. This is
particularly true for fast IGBT s. It is also possible to turn–of f
an IGBT too fast. Excessive turn–off speed will result in
large overshoot voltages. Normally, the turn–off resistor is
a small fraction of the turn–on resistor.

The MC33153 contains a bipolar totem pole output stage
that is capable of sourcing 1.0 amp and sinking 2.0 amps
peak. This output also contains a pull down resistor to ensure

,

that the IGBT is off whenever there is insufficient V
MC33153.

In a PWM inverter, IGBTs are used in a half–bridge
configuration. Thus, at least one device is always off. While

CC

off

to the

,

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MC33153

the IGBT is in the off–state, it will be subjected to changes
in voltage caused by the other devices. This is particularly
a problem when the opposite transistor turns on.

When the lower device is turned on, clearing the upper
diode, the turn–on dv/dt of the lower device appears across
the collector emitter of the upper device. To eliminate
shoot–through currents, it is necessary to provide a low sink
impedance to the device that is in the off–state. In most
applications the turn–off resistor can be made small enough
to hold off the device that is under commutation without
causing excessively fast turn–off speeds.

V

CC

R

Output

5

V

V

EE

EE

3

V

EE

Figure 30. Using a Single Gate Resistor

V

CC

R

Output

5

R

D

off

IGBT

g

IGBT

on

off

that the opto’s dv/dt capability is not exceeded. Like most
optoisolators, the HCPL4053 has an active low
open–collector output. Thus, when the LED is on, the output
will be low. The MC33153 has an inverting input pin to
interface directly with an optoisolator using a pull up
resistor. The input may also be interfaced directly to 5.0 V
CMOS logic or a microcontroller.

Optoisolator Output Fault

The MC33153 has an active high fault output. The fault
output may be easily interfaced to an optoisolator. While it
is important that all faults are properly reported, it is equally
important that no false signals are propagated. Again, a high
dv/dt optoisolator should be used.

The LED drive provides a resistor programmable current
of 10 to 20 mA when on, and provides a low impedance path
when off. An active high output, resistor, and small signal
diode provide an excellent LED driver. This circuit is shown
in Figure 32.

Short Circuit
Latch Output

Figure 32. Output Fault Optoisolator

V

CC

Q

7

V

V

EE

EE

V

V

EE

EE

3

V

EE

Figure 31. Using Separate Resistors

for Turn–On and Turn–Off

A negative bias voltage can be used to drive the IGBT into
the off–state. This is a practice carried over from bipolar
Darlington drives and is generally not required for IGBTs.
However, a negative bias will reduce the possibility of
shoot–through. The MC33153 has separate pins for V

EE

and
Kelvin Ground. This permits operation using a +15/–5.0 V
supply.

INTERFACING WITH OPTOISOLATORS

Isolated Input

The MC33153 may be used with an optically isolated
input. The optoisolator can be used to provide level shifting,
and if desired, isolation from ac line voltages. An
optoisolator with a very high dv/dt capability should be
used, such as the Hewlett Packard HCPL4053. The IGBT
gate turn–on resistor should be set large enough to ensure

UNDERVOLTAGE LOCKOUT

It is desirable to protect an IGBT from insufficient gate
voltage. IGBTs require 15 V on the gate to achieve the rated
on–voltage. At gate voltages below 13 V, the on–voltage
increases dramatically , especially at higher currents. At very
low gate voltages, below 10 V, the IGBT may operate in the
linear region and quickly overheat. Many PWM motor
drives use a bootstrap supply for the upper gate drive. The
UVLO provides protection for the IGBT in case the
bootstrap capacitor discharges.

The MC33153 will typically start up at about 12 V. The
UVLO circuit has about 1.0 V of hysteresis and will disable
the output if the supply voltage falls below about 11 V.

PROTECTION CIRCUITRY

Desaturation Protection

Bipolar Power circuits have commonly used what is
known as “Desaturation Detection”. This involves
monitoring the collector voltage and turning off the device
if this voltage rises above a certain limit. A bipolar transistor
will only conduct a certain amount of current for a given
base drive. When the base is overdriven, the device is in

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MC33153

saturation. When the collector current rises above the knee,
the device pulls out of saturation. The maximum current the
device will conduct in the linear region is a function of the
base current and the dc current gain (hFE) of the transistor.

The output characteristics of an IGBT are similar to a
Bipolar device. However, the output current is a function of
gate voltage instead of current. The maximum current
depends on the gate voltage and the device type. IGBTs tend
to have a very high transconductance and a much higher
current density under a short circuit than a bipolar device.
Motor control IGBTs are designed for a lower current
density under shorted conditions and a longer short circuit
survival time.

The best method for detecting desaturation is the use of a
high voltage clamp diode and a comparator. The MC33153
has a Fault Blanking/Desaturation Comparator which
senses the collector voltage and provides an output
indicating when the device is not fully saturated. Diode D1
is an external high voltage diode with a rated voltage
comparable to the power device. When the IGBT is “on” and
saturated, D1 will pull down the voltage on the Fault
Blanking/Desaturation Input. When the IGBT pulls out of
saturation or is “off”, the c u r r e n t s o u r c e w ill pull up the input
and trip the comparator. The comparator threshold is 6.5 V,
allowing a maximum on–voltage of about 5.8 V.

A fault exists when the gate input is high and V
greater than the maximum allowable V

. The output of

CE(sat)

CE

is

the Desaturation Comparator is ANDed with the gate input
signal and fed into the Short Circuit and Overcurrent
Latches. The Overcurrent Latch will turn–off the IGBT for
the remainder of the cycle when a fault is detected. When
input goes high, both latches are reset. The reference voltage
is tied to the Kelvin Ground instead of the V

to make the

EE

threshold independent of negative gate bias. Note that for
proper operation of the Desaturation Comparator and the
Fault Output, the Current Sense Input must be biased above
the Overcurrent and Short Circuit Comparator thresholds.
This can be accomplished by connecting Pin 1 to V

V

Kelvin

Gnd

CC

V

ref

6.5 V

270 µA

V

CC

D1

8

V

EE

Desaturation
Comparator

Figure 33. Desaturation Detection

CC

.

The MC33153 also features a programmable fault
blanking time. During turn–on, the IGBT must clear the
opposing free–wheeling diode. The collector voltage will
remain high until the diode is cleared. Once the diode has

been cleared, the voltage will come down quickly to the
V
considerable ringing on the collector due to the C

of the device. Following turn–on, there is normally

CE(sat)

OSS

capacitance of the IGBTs and the parasitic wiring
inductance. The fault signal from the Desaturation
Comparator must be blanked sufficiently to allow the diode
to be cleared and the ringing to settle out.

The blanking function uses an NPN transistor to clamp the
comparator input when the gate input is low. When the input
is switched high, the clamp transistor will turn “off”,
allowing the internal current source to charge the blanking
capacitor. The time required for the blanking capacitor to
charge up from the on–voltage of the internal NPN transistor
to the trip voltage of the comparator is the blanking time.

If a short circuit occurs after the IGBT is turned on and
saturated, the delay time will be the time required for the
current source to charge up the blanking capacitor from the
V

level of the IGBT to the trip voltage of the

CE(sat)

comparator. Fault blanking can be disabled by leaving Pin 8
unconnected.

Sense IGBT Protection

Another approach to protecting the IGBT s is to sense the
emitter current using a current shunt or Sense IGBTs. This
method has the advantage of being able to use high gain
IGBTs which do not have any inherent short circuit
capability. Current sense IGBTs work as well as current
sense MOSFETs in most circumstances. However, the basic
problem of wo rking with very low sense voltages still exists.
Sense IGBTs sense current through the channel and are
therefore linear with respect to the collector current.
Because IGBTs have a very low incremental on–resistance,
sense IGBTs behave much like low–on resistance current
sense MOSFETs. The output voltage of a properly
terminated sense IGBT is very low, normally less than
100 mV.

The sense IGBT approach requires fault blanking to
prevent false tripping during turn–on. The sense IGBT also
requires that the sense signal is ignored while the gate is low.
This is because the mirror output normally produces large
transient voltages during both turn–on and turn–off due to
the collector to mirror capacitance. With non–sensing types
of IGBTs, a low resistance current shunt (5.0 to 50 mΩ) can
be used to sense the emitter current. When the output is an
actual short circuit, the inductance will be very low. Since
the blanking circuit provides a fixed minimum on–time, the
peak current under a short circuit can be very high. A short
circuit discern function is implemented by the second
comparator which has a higher trip voltage. The short circuit
signal is latched and appears at the Fault Output. When a
short circuit is detected, the IGBT should be turned–off for
several milliseconds allowing it to cool down before it is
turned back on. The sense circuit is very similar to the
desaturation circuit. It is possible to build a combination
circuit that provides protection for both Short Circuit
capable IGBTs and Sense IGBTs.

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10

MC33153

APPLICATION INFORMATION

Figure 34 shows a basic IGBT driver application. When
driven from an optoisolator, an input pull up resistor is
required. This resistor value should be set to bias the output
transistor at the desired current. A decoupling capacitor
should be placed close to the IC to minimize switching noise.

A bootstrap diode may be used for a floating supply. If the
protection features are not required, then both the Fault
Blanking/Desaturation and Current Sense Inputs should
both be connected to the Kelvin Ground (Pin 2). When used
with a single supply , the Kelvin Ground and V

pins should

EE

be connected together. Separate gate resistors are
recommended to optimize the turn–on and turn–off drive.

18 V

B+

7

Fault

4

Input

6

V

CC

MC33153

V

EE

3

Bootstrap

Desat/

Blank

Output

Sense

Gnd

8

5

1

2

blanking capacitor should be connected from the
Desaturation pin to the V

pin. If a dual supply is used, the

EE

blanking capacitor should be connected to the Kelvin
Ground. The Current Sense Input should be tied high
because the two comparator outputs are ANDed together.
Although the reverse voltage on collector of the IGBT is
clamped to the emitter by the free–wheeling diode, there is
normally considerable inductance within the package itself.
A small resistor in series with the diode can be used to
protect the IC from reverse voltage transients.

18 V

6

Fault

MC33153

Input

V

CC

V

EE

3

7

4

Figure 36. Desaturation Application

Desat/

Blank

Output

Sense

Gnd

8

C

Blank

5

1

2

Figure 34. Basic Application

15 V

6

-5.0 V

7

4

Fault

MC33153

Input

V

CC

V

EE

3

Desat/

Blank

Output

Sense

Gnd

8

5

1

2

Figure 35. Dual Supply Application

When used in a dual supply application as in Figure 35, the
Kelvin Ground should be connected to the emitter of the
IGBT. If the protection features are not used, then both the
Fault Blanking/Desaturation and the Current Sense Inputs
should be connected to Ground. The input optoisolator
should always be referenced to V

EE

.

If desaturation protection is desired, a high voltage diode
is connected to the Fault Blanking/Desaturation pin. The

When using sense IGBTs or a sense resistor, the sense
voltage is applied to the Current Sense Input. The sense trip
voltages are referenced to the Kelvin Ground pin. The sense
voltage is very small, typically about 65 mV, and sensitive
to noise. Therefore, the sense and ground return conductors
should be routed as a differential pair. An RC filter is useful
in filtering any high frequency noise. A blanking capacitor
is connected from the blanking pin to V

. The stray

EE

capacitance on the blanking pin provides a very small level
of blanking if left open. The blanking pin should not be
grounded when using current sensing, that would disable the
sense. The blanking pin should never be tied high, that
would short out the clamp transistor.

18 V

6

Fault

MC33153

Input

V

CC

V

EE

3

7

4

Figure 37. Sense IGBT Application

Desat/

Blank

Output

Sense

Gnd

8

5

1

2

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11

NOTE 2

–T–

SEATING
PLANE

H

58

–B–

14

F

–A–

C

N

D

G

0.13 (0.005) B

MC33153

PACKAGE DIMENSIONS

P SUFFIX

PLASTIC PACKAGE

CASE 626–05

ISSUE L

K

M

M

A

T

M

NOTES:

1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.

2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).

3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

DIM MIN MAX MIN MAX

A 9.40 10.16 0.370 0.400
B 6.10 6.60 0.240 0.260
C 3.94 4.45 0.155 0.175
D 0.38 0.51 0.015 0.020

L

J

F 1.02 1.78 0.040 0.070

G 2.54 BSC 0.100 BSC

H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012
K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC

M --- 10 --- 10

N 0.76 1.01 0.030 0.040

INCHESMILLIMETERS



M

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12

–Y–

–Z–

MC33153

PACKAGE DIMENSIONS

D SUFFIX

PLASTIC PACKAGE

CASE 751–07

(SO–8)

ISSUE W

–X–

A

58

B

1

S

0.25 (0.010)

4

M

M

Y

K

G

C

SEATING
PLANE

0.10 (0.004)

H

D

0.25 (0.010) Z

M

Y

SXS

N

X 45



M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010

J

J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8



N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244

INCHES

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13

Notes

MC33153

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14

Notes

MC33153

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15

MC33153

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

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MC33153/D