The MC100EP31 is a D flip-flop with set and reset. The device is
pin and functionally equivalent to the EL31 and LVEL31 devices.
With AC performance much faster than the EL31 and LVEL31
devices, the EP31 is ideal for applications requiring the fastest AC
performance available. Both set and reset inputs are asynchronous,
level triggered signals. Data enters the master portion of the flip-flop
when CLK is low and is transferred to the slave, and thus the outputs,
upon a positive transition of the CLK.
The 100 Series contains temperature compensation.
Features
• 340 ps Typical Propagation Delay
• Maximum Frequency = > 3 GHz Typical
• PECL Mode Operating Range:
= 3.0 V to 5.5 V with VEE = 0 V
V
CC
• NECL Mode Operating Range:
= 0 V with VEE = −3.0 V to −5.5 V
V
CC
• Open Input Default State
• Q Output Will Default LOW with Inputs Open or at V
• These Devices are Pb-Free, Halogen Free and are RoHS Compliant
EE
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8
1
SOIC−8 NB
D SUFFIX
CASE 751−07
MARKING DIAGRAMS*
8
KEP31
ALYW
G
1
SOIC−8 NBTSSOP−8
8
TSSOP−8
DT SUFFIX
CASE 948R−02
8
KP31
ALYWG
G
1
1
K= MC100
A= Assembly Location
L= Wafer Lot
Y= Year
W= Work Week
G= Pb-Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D
ORDERING INFORMATION
DevicePackageShipping
MC100EP31DG
MC100EP31DTG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
Human Body Model
Machine Model
Charged Device Model
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)Pb-Free Pkg
SOIC−8 NB
TSSOP−8
Flammability Rating
Oxygen Index: 28 to 34UL 94 V−0 @ 0.125 in
Transistor Count75 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
75 kW
> 4 kV
> 200 V
> 2 kV
Level 1
Level 3
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2
MC100EP31
Table 4. MAXIMUM RATINGS
SymbolParameterCondition 1Condition 2RatingUnit
V
V
I
T
T
q
q
q
q
T
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Input HIGH Voltage (Single-Ended)−1225−880−1225−880−1225−880mV
IH
Input LOW Voltage (Single-Ended)−1945−1625 −1945−1625 −1945−1625mV
IL
Input HIGH Current150150150
IH
Input LOW Current0.50.50.5
IL
mA
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC.
2. All loading with 50 W to V
− 2.0 V.
CC
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4
MC100EP31
Table 8. AC CHARACTERISTICS(V
= 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; V
CC
= 0 V (Note 1))
EE
−40°C25°C85°C
Symbol
f
max
Characteristic
Maximum Frequency
MinTy pMaxMinTy pMaxMinTy pMax
> 3> 3> 3GHz
Unit
(Figure 2)
t
,
PLH
t
PHL
t
RR
t
t
t
PW
t
JITTER
Propagation Delay to
Output Differential
CLK to Q, Q
S, R to Q, Q
250
300
330
380
400
450
270
330
340
400
410
470
300
360
370
430
Set/Reset Recovery225225225ps
S
H
Setup Time
Hold Time
100
150
100
150
100
150
Minimum Pulse width
SET, RESET
Cycle-to-Cycle Jitter
550450550450550450
0.2< 10.2< 10.2< 1ps
440
500
(Figure 2)
t
Output Rise/Fall Times
r
t
f
(20% − 80%)501201806013020070150220
Q, Q
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
CC
−2.0 V.
ps
ps
ps
ps
1100
1000
(mV)
OUTpp
V
900
800
700
600
500
400
300
200
100
0
(JITTER)
0100020003000400050006000
FREQUENCY (MHz)
Figure 2. F
max
/Jitter
11
10
9
8
7
6
5
4
3
2
1
ps (RMS)
OUT
JITTER
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5
MC100EP31
QD
Driver
Device
QD
Figure 3. Typical Termination for Output Driver and Device Evaluation
(See Application Note AND8020/D
Resource Reference of Application Notes
AN1405/D− ECL Clock Distribution Techniques
AN1406/D− Designing with PECL (ECL at +5.0 V)
AN1503/D−
AN1504/D− Metastability and the ECLinPS Family
AN1568/D− Interfacing Between LVDS and ECL
AN1672/D− The ECL Translator Guide
AND8001/D − Odd Number Counters Design
AND8002/D − Marking and Date Codes
AND8020/D − Termination of ECL Logic Devices
AND8066/D − Interfacing with ECLinPS
AND8090/D − AC Characteristics of ECL Devices
ECLinPSt I/O SPiCE Modeling Kit
Zo = 50 W
Zo = 50 W
Receiver
Device
50 W50 W
V
VTT = VCC − 2.0 V
TT
− Termination of ECL Logic Devices)
ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
8
1
SCALE 1:1
−Y−
−Z−
−X−
A
58
B
1
4
G
H
D
0.25 (0.010)Z
M
SOLDERING FOOTPRINT*
7.0
0.275
S
Y
0.25 (0.010)
C
SEATING
PLANE
SXS
0.060
0.10 (0.004)
1.52
4.0
0.155
CASE 751−07
M
M
Y
N
SOIC−8 NB
ISSUE AK
K
X 45
_
M
J
MARKING DIAGRAM*
8
XXXXX
ALYWX
1
XXXXX = Specific Device Code
A= Assembly Location
L= Wafer Lot
Y= Year
W= Work Week
G= Pb−Free Package
8
XXXXX
ALYWX
G
1
IC
IC
(Pb−Free)
DATE 16 FEB 2011
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
XXXXXX = Specific Device Code
A= Assembly Location
Y= Year
WW= Work Week
G= Pb−Free Package
8
XXXXXX
AYWW
1
Discrete
(Pb−Free)
G
0.6
0.024
1.270
0.050
SCALE 6:1
ǒ
inches
mm
Ǔ
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
STYLE 5:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. DRAIN
5. GATE
6. GATE
7. SOURCE
8. SOURCE
STYLE 9:
PIN 1. EMITTER, COMMON
2. COLLECTOR, DIE #1
3. COLLECTOR, DIE #2
4. EMITTER, COMMON
5. EMITTER, COMMON
6. BASE, DIE #2
7. BASE, DIE #1
8. EMITTER, COMMON
STYLE 13:
PIN 1. N.C.
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 17:
PIN 1. VCC
2. V2OUT
3. V1OUT
4. TXE
5. RXE
6. VEE
7. GND
8. ACC
STYLE 21:
PIN 1. CATHODE 1
2. CATHODE 2
3. CATHODE 3
4. CATHODE 4
5. CATHODE 5
6. COMMON ANODE
7. COMMON ANODE
8. CATHODE 6
STYLE 25:
PIN 1. VIN
2. N/C
3. REXT
4. GND
5. IOUT
6. IOUT
7. IOUT
8. IOUT
STYLE 29:
PIN 1. BASE, DIE #1
2. EMITTER, #1
3. BASE, #2
4. EMITTER, #2
5. COLLECTOR, #2
6. COLLECTOR, #2
7. COLLECTOR, #1
8. COLLECTOR, #1
STYLE 2:
PIN 1. COLLECTOR, DIE, #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. BASE, #2
6. EMITTER, #2
7. BASE, #1
8. EMITTER, #1
STYLE 6:
PIN 1. SOURCE
2. DRAIN
3. DRAIN
4. SOURCE
5. SOURCE
6. GATE
7. GATE
8. SOURCE
STYLE 10:
PIN 1. GROUND
2. BIAS 1
3. OUTPUT
4. GROUND
5. GROUND
6. BIAS 2
7. INPUT
8. GROUND
STYLE 14:
PIN 1. N−SOURCE
2. N−GATE
3. P−SOURCE
4. P−GATE
5. P−DRAIN
6. P−DRAIN
7. N−DRAIN
8. N−DRAIN
STYLE 18:
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
STYLE 22:
PIN 1. I/O LINE 1
2. COMMON CATHODE/VCC
3. COMMON CATHODE/VCC
4. I/O LINE 3
5. COMMON ANODE/GND
6. I/O LINE 4
7. I/O LINE 5
8. COMMON ANODE/GND
STYLE 26:
PIN 1. GND
2. dv/dt
3. ENABLE
4. ILIMIT
5. SOURCE
6. SOURCE
7. SOURCE
8. VCC
STYLE 30:
PIN 1. DRAIN 1
2. DRAIN 1
3. GATE 2
4. SOURCE 2
5. SOURCE 1/DRAIN 2
6. SOURCE 1/DRAIN 2
7. SOURCE 1/DRAIN 2
8. GATE 1
SOIC−8 NB
CASE 751−07
ISSUE AK
STYLE 3:
STYLE 7:
STYLE 11:
STYLE 15:
PIN 1. DRAIN, DIE #1
2. DRAIN, #1
3. DRAIN, #2
4. DRAIN, #2
5. GATE, #2
6. SOURCE, #2
7. GATE, #1
8. SOURCE, #1
PIN 1. INPUT
2. EXTERNAL BYPASS
3. THIRD STAGE SOURCE
4. GROUND
5. DRAIN
6. GATE 3
7. SECOND STAGE Vd
8. FIRST STAGE Vd
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
PIN 1. ANODE 1
2. ANODE 1
3. ANODE 1
4. ANODE 1
5. CATHODE, COMMON
6. CATHODE, COMMON
7. CATHODE, COMMON
8. CATHODE, COMMON
STYLE 19:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. MIRROR 2
7. DRAIN 1
8. MIRROR 1
STYLE 23:
PIN 1. LINE 1 IN
2. COMMON ANODE/GND
3. COMMON ANODE/GND
4. LINE 2 IN
5. LINE 2 OUT
6. COMMON ANODE/GND
7. COMMON ANODE/GND
8. LINE 1 OUT
STYLE 27:
PIN 1. ILIMIT
2. OVLO
3. UVLO
4. INPUT+
5. SOURCE
6. SOURCE
7. SOURCE
8. DRAIN
DATE 16 FEB 2011
STYLE 4:
PIN 1. ANODE
2. ANODE
3. ANODE
4. ANODE
5. ANODE
6. ANODE
7. ANODE
8. COMMON CATHODE
STYLE 8:
PIN 1. COLLECTOR, DIE #1
2. BASE, #1
3. BASE, #2
4. COLLECTOR, #2
5. COLLECTOR, #2
6. EMITTER, #2
7. EMITTER, #1
8. COLLECTOR, #1
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
STYLE 20:
PIN 1. SOURCE (N)
2. GATE (N)
3. SOURCE (P)
4. GATE (P)
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 24:
PIN 1. BASE
2. EMITTER
3. COLLECTOR/ANODE
4. COLLECTOR/ANODE
5. CATHODE
6. CATHODE
7. COLLECTOR/ANODE
8. COLLECTOR/ANODE
STYLE 28:
PIN 1. SW_TO_GND
2. DASIC_OFF
3. DASIC_SW_DET
4. GND
5. V_MON
6. VBULK
7. VBULK
8. VIN
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 2:1
TSSOP 8
CASE 948R−02
ISSUE ADATE 04/07/2000
0.10 (0.004)
−T−
SEATING
PLANE
8x REFK
S
U0.15 (0.006) T
2X L/2
85
L
PIN 1
IDENT
S
U0.15 (0.006) T
0.10 (0.004)V
1
−U−
4
A
M
B
−V−
S
U
T
S
0.25 (0.010)
M
F
DETAIL E
C
D
G
DETAIL E
−W−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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