ON Semiconductor MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G User Manual

MBRM140T1G,
NRVBM140T1G,
MBRM140T3G,
NRVBM140T3G

Schottky Power Rectifier,
Surface Mount, 1.0 A, 40 V

The Schottky POWERMITE employs the Schottk

principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,

the POWERMITE has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the

lowest height profiles,  1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and DC

−DC converters, reverse battery protection, and “ORing” of multiple
supply voltages and any other application where performance and size
are critical.

Features

 Low Profile − Maximum Height of 1.1 mm
 Small Footprint − Footprint Area of 8.45 mm
 Low V

Provides Higher Efficiency and Extends Battery Life

F

2

 Supplied in 12 mm Tape and Reel
 Low Thermal Resistance with Direct Thermal Path of Die on

Exposed Cathode Heat Sink

 ESD Ratings:

 Human Body Model = 3B (> 16000 V)
 Machine Model = C (> 400 V)

 AEC−Q101 Qualified and PPAP Capable
 NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 All Packages are Pb−Free*

Mechanical Characteristics:

 POWERMITE



is JEDEC Registered as D0−216AA

 Case: Molded Epoxy
 Epoxy Meets UL 94 V−0 @ 0.125 in
 Weight: 16.3 mg (Approximately)
 Lead and Mounting Surface Temperature for Soldering Purposes:

260C Maximum for 10 Seconds

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

y Barrier

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES, 40 VOLTS

CATHODE

POWERMITE

CASE 457

PLASTIC

MARKING DIAGRAM

12

M = Date Code
BCJ = Device Code
G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

MBRM140T1G POWERMITE

NRVBM140T1G POWERMITE

MBRM140T3G POWERMITE

NRVBM140T3G POWERMITE

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

M

BCJG

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

ANODE

3,000 /

Tape & Reel

3,000 /

Tape & Reel

12,000 /

Tape & Reel

12,000 /

Tape & Reel

†

 Semiconductor Components Industries, LLC, 2012

January, 2012 − Rev. 4

1 Publication Order Number:

MBRM140/D

MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Average Rectified Forward Current

(At Rated V

, TC = 110C)

R

Peak Repetitive Forward Current

(At Rated V

, Square Wave, 100 kHz, TC = 110C)

R

Non−Repetitive Peak Surge Current

(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)

Storage Temperature T

Operating Junction Temperature T

Voltage Rate of Change

(Rated V

, TJ = 25C)

R

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)

1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10

V

RRM

V

RWM

V

I

I

FRM

I

FSM

dv/dt

R

R

tjtab

R

stg

40 V

R

O

1.0

A

A

2.0

A

50

−55 to 150 C

J

−55 to 125 C

V/ms

10,000

tjl

35

C/W

23

tja

277

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 2), See Figure 2

(IF = 0.1 A)
(I

= 1.0 A)

F

(IF = 3.0 A)

Maximum Instantaneous Reverse Current (Note 2), See Figure 4

(VR = 40 V)
(V

= 20 V)

R

2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%

10

1.0

TJ = 125C

TJ = 85C

TJ = 25C

TJ = −40C

100

10

1.0

V

F

I

R

TJ = 85C

TJ = 25C TJ = 85C

0.36

0.55

0.85

TJ = 25C TJ = 85C

0.5

0.15

TJ = 125C

TJ = 25C

V

0.30

0.515

0.88

mA

25
18

0.1

0.1

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

v

, INSTANTANEOUS FORWARD CURRENT (AMPS)
i

F

F

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

0.70.3 0.5 0.9

http://onsemi.com

0.1

0.1

, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE

V

F

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

I

2

0.70.3 0.5 0.9

(VOLTS)