MBRM140T1G,
NRVBM140T1G,
MBRM140T3G,
NRVBM140T3G
Schottky Power Rectifier,
Surface Mount, 1.0 A, 40 V
The Schottky POWERMITE employs the Schottk
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITE has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and DC
−DC converters, reverse battery protection, and “ORing” of multiple
supply voltages and any other application where performance and size
are critical.
Features
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm
Low V
Provides Higher Efficiency and Extends Battery Life
F
2
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model = 3B (> 16000 V)
Machine Model = C (> 400 V)
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
POWERMITE
is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
y Barrier
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 40 VOLTS
CATHODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
12
M = Date Code
BCJ = Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MBRM140T1G POWERMITE
NRVBM140T1G POWERMITE
MBRM140T3G POWERMITE
NRVBM140T3G POWERMITE
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
M
BCJG
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
ANODE
3,000 /
Tape & Reel
3,000 /
Tape & Reel
12,000 /
Tape & Reel
12,000 /
Tape & Reel
†
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 4
1 Publication Order Number:
MBRM140/D
MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
, TC = 110C)
R
Peak Repetitive Forward Current
(At Rated V
, Square Wave, 100 kHz, TC = 110C)
R
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage Temperature T
Operating Junction Temperature T
Voltage Rate of Change
(Rated V
, TJ = 25C)
R
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
V
RRM
V
RWM
V
I
I
FRM
I
FSM
dv/dt
R
R
tjtab
R
stg
40 V
R
O
1.0
A
A
2.0
A
50
−55 to 150 C
J
−55 to 125 C
V/ms
10,000
tjl
35
C/W
23
tja
277
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(IF = 0.1 A)
(I
= 1.0 A)
F
(IF = 3.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 40 V)
(V
= 20 V)
R
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%
10
1.0
TJ = 125C
TJ = 85C
TJ = 25C
TJ = −40C
100
10
1.0
V
F
I
R
TJ = 85C
TJ = 25C TJ = 85C
0.36
0.55
0.85
TJ = 25C TJ = 85C
0.5
0.15
TJ = 125C
TJ = 25C
V
0.30
0.515
0.88
mA
25
18
0.1
0.1
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
v
, INSTANTANEOUS FORWARD CURRENT (AMPS)
i
F
F
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.70.3 0.5 0.9
http://onsemi.com
0.1
0.1
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
V
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
I
2
0.70.3 0.5 0.9
(VOLTS)
MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G
10E−3
1.0E−3
100E−6
10E−6
, REVERSE CURRENT (AMPS)
R
I
1.0E−6
10 20 30 400
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
1.8
1.6
dc
1.4
1.2
1.0
0.8
SQUARE WAVE
Ipk/Io = p
Ipk/Io = 5
0.6
0.4
Ipk/Io = 10
Ipk/Io = 20
0.2
0
, AVERAGE FORWARD CURRENT (AMPS)
O
I
45 7525
35 65 85 95
55 115105
TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
TJ = 85C
TJ = 25C
FREQ = 20 kHz
100E−3
10E−3
1.0E−3
100E−6
10E−6
, MAXIMUM REVERSE CURRENT (AMPS)
R
I
400
10 20 30
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
Ipk/Io = 20
Ipk/Io = 10
0.5
0.4
0.3
0.2
0.1
, AVERAGE POWER DISSIPATION (WATTS)
FO
P
0
0.20
125
TJ = 85C
TJ = 25C
Ipk/Io = p
Ipk/Io = 5
0.6 1.4
SQUARE
WAVE
1.00.4 0.8 1.2 1.6
dc
1000
125
115
TJ = 25C
105
100
C, CAPACITANCE (pF)
10
95
51C/W
69C/W
85
, DERATED OPERATING TEMPERATURE (_C)
T
75
J
155.0 10 20 25 20 255.0 10
, REVERSE VOLTAGE (VOLTS)
V
R
300
4035 30 35
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
83.53C/W
VR, DC REVERSE VOLTAGE (VOLTS)
R
15 400
= 33.72C/W
tja
96C/W
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of T
may be calculated from the equation: TJ = T
T
J
therefore must include forward and reverse power effects. The allowable operating
J
− r(t)(Pf + Pr) where
Jmax
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
due to reverse bias under DC conditions only and is calculated as TJ = T
J
where r(t) = Rthja. For other power applications further calculations must be performed.
http://onsemi.com
3
Jmax
− r(t)Pr,
1.0
0.1
0.01
MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G
50%
20%
10%
5.0%
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
(T)
1.0
50%
20%
0.1
10%
5.0%
0.01
2.0%
0.001
, TRANSIENT THERMAL RESISTANCE (NORMALIZED) R
(T)
R
1.0%
0.0001 0.001 0.01 1.0 10
T, TIME (s)
Figure 9. Thermal Response Junction to Lead
Rtjl(t) = Rtjl*r(t)
T, TIME (s)
Figure 10. Thermal Response Junction to Ambient
1000.10.00001
1000.10.00001 1,0000.0001 0.001 0.01 1.0 10
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
http://onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 4:1
−A−
S
−B−
K
R
C
J
L
J
H
−T−
0.08 (0.003) C
POWERMITE
CASE 457−04
ISSUE F
F
0.08 (0.003) C
PIN 1
D
M
S
B
T
M
PIN 2
S
DATE 14 MAY 2013
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
S
B
T
S
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.15 (0.006) PER SIDE.
DIM MIN MAX MIN MAX
A 1.75 2.05 0.069 0.081
B 1.75 2.18 0.069 0.086
C 0.85 1.15 0.033 0.045
D 0.40 0.69 0.016 0.027
F 0.70 1.00 0.028 0.039
H -0.05 +0.10 -0.002 +0.004
J 0.10 0.25 0.004 0.010
K 3.60 3.90 0.142 0.154
L 0.50 0.80 0.020 0.031
R 1.20 1.50 0.047 0.059
S
0.50 REF 0.019 REF
INCHESMILLIMETERS
GENERIC
MARKING DIAGRAMS*
STYLE 1:
PIN 1. CATHODE
2. ANODE
STYLE 2:
PIN 1. ANODE OR CATHODE
2. CATHODE OR ANODE
(BI−DIRECTIONAL)
STYLE 3:
PIN 1. ANODE
2. CATHODE
SOLDERING FOOTPRINT*
0.635
2.67
0.105
2.54
0.100
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.025
SCALE 10:1
0.762
0.030
0.050
ǒ
inches
1.27
mm
Ǔ
12
M
XXXG
12
STYLE 1
12
M
XXXG
M
XXXG
STYLE 2
STYLE 3
XXX = Specific Device Code
M = Date Code
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
98ASB14853C
POWERMITE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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