ON Semiconductor MBRB20200CTG, SBRB20200CTT4G User Manual

MBRB20200CTG, SBRB20200CTT4G

witch-mode

Power Rectifier

Dual Schottky Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz.

Features

 200 V Blocking Voltage  Low Forward Voltage Drop  Guardring for Stress Protection and High dv/dt Capability

(10,000 V/ms)

 Dual Diode Construction − Terminals 1 and 3 Must be Connected for

Parallel Operation at Full Rating

 AEC−Q101 Qualified and PPAP Capable  SBRB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 All Packages are Pb−Free*

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SCHOTTKY BARRIER

RECTIFIER

20 AMPERES, 200 V

D2PAK

CASE 418B

Mechanical Characteristics:

 Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  Weight: 1.7 Grams (Approximately)  Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

 Lead and Mounting Surface Temperature for Soldering

Purposes: 260C Max. for 10 Seconds

 Device Meets MSL1 Requirements  ESD Rating:

 Human Body Model = 3B  Machine Model = C

MARKING DIAGRAM

AY WW

B20200G AKA

A = Assembly Location Y = Year WW = Work Week B20200 = Device Code G = Pb−Free Package AKA = Diode Polarity

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2012

January, 2012 − Rev. 7

1 Publication Order Number:

MBRB20200CT/D

MBRB20200CTG, SBRB20200CTT4G

MAXIMUM RATINGS (Per Leg)

Rating

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

Average Rectified Forward Current

(At Rated V

Per Leg

, TC = 134C)

Per Device

Peak Repetitive Forward Current

(At Rated V

Per Leg

, Square Wave, 20 kHz, TC = +137C)

Nonrepetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

Storage Temperature Range T

Operating Junction Temperature T

Voltage Rate of Change (Rated VR) dv/dt 10,000

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS (Per Leg)

Characteristic

Thermal Resistance, Junction−to−Case

Symbol Value Unit

F(AV)

RRM

RWM

200 V

10 20

FRM

FSM

RRM

stg

150

1.0 A

−65 to +175 C

−65 to +150 C

V/ms

Symbol Value Unit

2.0 C/W

ELECTRICAL CHARACTERISTICS (Per Leg)

Characteristic

Maximum Instantaneous Forward Voltage (Note 1)

(IF = 10 A, TC = 25C) (IF = 10 A, TC = 125C) (IF = 20 A, TC = 25C) (IF = 20 A, TC = 125C)

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, T (Rated dc Voltage, TC = 125C)

= 25C)

Symbol Value Unit

0.9

0.8

1.0

0.9

1.0

DYNAMIC CHARACTERISTICS (Per Leg)

Capacitance

= −5.0 V, TC = 25C, Frequency = 1.0 MHz)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.

500

ORDERING INFORMATION

Device Package Shipping

MBRB20200CTG D2PAK

50 Units / Rail

(Pb−Free)

MBRB20200CTT4G D2PAK

800 Units / Tape & Reel

(Pb−Free)

SBRB20200CTT4G D2PAK

800 Units / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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MBRB20200CTG, SBRB20200CTT4G

100

70 50

TJ = 150C

TJ = 125C

TJ = 100C

TJ = 25C

I , INSTANEOUS FORWARD CURRENT (AMP)

0.2 0.4 0.6 0.8 1 vF, INSTANTANEOUS VOLTAGE (V)

Figure 1. Typical Forward Voltage (Per Leg)

F(AV)

P , AVERAGE POWER DISSIPATION (WATTS)

0 5 10 15 20 25 30 35

TJ = 125C

= 20

, AVERAGE FORWARD CURRENT (A)

F(AV)

SQUARE

Figure 3. Forward Power Dissipation

WAVE

10,000

TJ = 150C

1,000

TJ = 125C



100

TJ = 100C

I , REVERSE CURRENT ( A)

0.1

TJ = 25C

0.01 20 40 60 80 100 120 140 160 180 200

VR, REVERSE CURRENT (V)

Figure 2. Typical Reverse Current (Per Leg)

SQUARE WAVE

F(AV)

I , AVERAGE FORWARD CURRENT (AMPS)

90 100 110 120 130 140 150 160

TC, CASE TEMPERATURE (C)

RATED VOLTAGE R

= 2C/W

Figure 4. Current Derating, Case

16C/W

JA =

RATED VOLTAGE

SQUARE WAVE

F(AV)

I , AVERAGE FORWARD CURRENT (AMPS)

0 25 50 75 100 125 150 175

, AMBIENT TEMPERATURE (C)

Figure 5. Current Derating, Ambient

500

400

300

200

C, CAPACITANCE (pF)

100

1 2 5 10 20 50 70 100

http://onsemi.com

TJ = 25C

VR, REVERSE VOLTAGE (V)

Figure 6. Typical Capacitance (Per Leg)

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

D2PAK 3

CASE 418B−04

ISSUE L

DATE 17 FEB 2015

SCALE 1:1

−T−

SEATING PLANE

−B−

NOTES:

231

3 PL

0.13 (0.005) T

VARIABLE CONFIGURATION ZONE

N P

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89

E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79

J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40

MILLIMETERSINCHES

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

VIEW W−W VIEW W−W VIEW W−W

123

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

STYLE 3:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

STYLE 4:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

STYLE 5:

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. ANODE

STYLE 6:

PIN 1. NO CONNECT

2. CATHODE

3. ANODE

4. CATHODE

MARKING INFORMATION AND FOOTPRINT ON PAGE 2

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98ASB42761B

D2PAK 3

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 2

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D2PAK 3

CASE 418B−04

ISSUE L

GENERIC

MARKING DIAGRAM*

DATE 17 FEB 2015

xxxxxxxxx

AWLYWWG

xxxxxxxxG

AYWW

IC Standard

xx = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package AKA = Polarity Indicator

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SOLDERING FOOTPRINT*

10.49

AYWW xxxxxxxxG AKA

Rectifier

8.38

16.155

3.504

1.016

5.080

PITCH

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98ASB42761B

D2PAK 3

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 2 OF 2

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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ON Semiconductor MBRB20200CTG, SBRB20200CTT4G User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual