ON Semiconductor MBRB20200CTG, SBRB20200CTT4G User Manual
MBRB20200CTG,
SBRB20200CTT4G
S
witch-mode
Power Rectifier
Dual Schottky Rectifier
This device uses the Schottky Barrier technology with a platinum
barrier metal. This state−of−the−art device is designed for use in high
frequency switching power supplies and converters with up to 48 V
outputs. They block up to 200 V and offer improved Schottky
performance at frequencies from 250 kHz to 5.0 MHz.
Features
200 V Blocking Voltage
Low Forward Voltage Drop
Guardring for Stress Protection and High dv/dt Capability
(10,000 V/ms)
Dual Diode Construction − Terminals 1 and 3 Must be Connected for
Parallel Operation at Full Rating
AEC−Q101 Qualified and PPAP Capable
SBRB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 200 V
D2PAK
CASE 418B
1
4
3
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering
Purposes: 260C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Rating:
Human Body Model = 3B
Machine Model = C
MARKING DIAGRAM
AY WW
B20200G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B20200 = Device Code
G = Pb−Free Package
AKA = Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1 Publication Order Number:
MBRB20200CT/D
MBRB20200CTG, SBRB20200CTT4G
MAXIMUM RATINGS (Per Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
Per Leg
, TC = 134C)
R
Per Device
Peak Repetitive Forward Current
(At Rated V
Per Leg
, Square Wave, 20 kHz, TC = +137C)
R
Nonrepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range T
Operating Junction Temperature T
Voltage Rate of Change (Rated VR) dv/dt 10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Thermal Resistance, Junction−to−Case
Symbol Value Unit
V
V
I
F(AV)
RRM
RWM
V
R
200 V
A
10
20
I
FRM
A
20
I
FSM
I
RRM
stg
150
1.0 A
−65 to +175 C
J
−65 to +150 C
A
V/ms
Symbol Value Unit
R
q
JC
2.0 C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 10 A, TC = 25C)
(IF = 10 A, TC = 125C)
(IF = 20 A, TC = 25C)
(IF = 20 A, TC = 125C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
(Rated dc Voltage, TC = 125C)
= 25C)
C
Symbol Value Unit
V
F
0.9
V
0.8
1.0
0.9
I
R
1.0
mA
50
DYNAMIC CHARACTERISTICS (Per Leg)
Capacitance
(V
= −5.0 V, TC = 25C, Frequency = 1.0 MHz)
R
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
C
T
pF
500
ORDERING INFORMATION
Device Package Shipping
MBRB20200CTG D2PAK
50 Units / Rail
(Pb−Free)
MBRB20200CTT4G D2PAK
800 Units / Tape & Reel
(Pb−Free)
SBRB20200CTT4G D2PAK
800 Units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
http://onsemi.com
2
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