...using the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ac/dc and dc−dc
converters, reverse battery protection, and “Oring” of multiple supply
voltages and any other application where performance and size are
critical. These state−of−the−art devices have the following features:
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL94, V0 at 1/8″
• Package Designed for Optimal Automated Board Assembly
• ESD Ratings: Machine Model, C
ESD Ratings: Human Body Model, 3B
Mechanical Characteristics
• Reel Options: MBR140SFT1 = 3,000 per 7″ reel/8 mm tape
Reel Options: MBR140SFT3 = 10,000 per 13″ reel/8 mm tape
• Device Marking: L4F
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
Figure 1. Typical Forward VoltageFigure 2. Maximum Forward Voltage
100E−3
10E−3
1.0E−3
100E−6
10E−6
, REVERSE CURRENT (AMPS)
R
I
1.0E−6
102030
, REVERSE VOLTAGE (VOLTS)
V
R
TJ = 25°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
0.70.30.50.9
1.0
TJ = 125°C
TJ = 85°C
0.1
0.1
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
V
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
I
1.0E+0
100E−3
10E−3
1.0E−3
100E−6
, MAXIMUM REVERSE CURRENT (AMPS)
10E−6
R
I
400
102030
VR, REVERSE VOLTAGE (VOLTS)
TJ = 25°C
0.70.30.50.9
(VOLTS)
TJ = 85°C
TJ = 25°C
400
Figure 3. Typical Reverse CurrentFigure 4. Maximum Reverse Current
1.8
1.6
1.4
SQUARE
1.2
1
0.8
0.6
0.4
Ipk/Io = 10
Ipk/Io = 20
0.2
0
, AVERAGE FORWARD CURRENT (AMPS)
O
I
3525
T
, LEAD TEMPERATURE (°C)
L
Figure 5. Current Derating
dc
freq = 20 kHz
WAVE
Ipk/Io =
Ipk/Io = 5
55115
75456585125
95 105
http://onsemi.com
1.0
0.9
0.8
0.7
0.6
Ipk/Io = 10
Ipk/Io = 20
Ipk/Io = 5
Ipk/Io =
SQUARE
WAVE
dc
0.5
0.4
0.3
0.2
0.1
, AVERAGE POWER DISSIPATION (WATTS)
FO
P
0
0.20
IO, AVERAGE FORWARD CURRENT (AMPS)
0.61.4
1.00.40.81.21.6
Figure 6. Forward Power Dissipation
3
MBR140SFT1
1000
125
R
= 25.6°C/W
JA
115
130°C/W
TJ = 25°C
105
324.9°C/W
95
100
85
235°C/W
75
TEMPERATURE (°C)
, DERATED OPERATING
C, CAPACITANCE (pF)
10
155102025
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitance
300
J
T
65
55
4035
V
R
1551020254035
, DC REVERSE VOLTAGE (VOLTS)
300
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of T
T
may be calculated from the equation:TJ = T
J
This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.
therefore must include forward and reverse power effects. The allowable operating
J
− r(t)(Pf + Pr) where
Jmax
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
due to reverse bias under DC conditions only and is calculated as TJ = T
J
Jmax
− r(t)Pr,
1000
100
0.1
r(t), TRANSIENT THERMAL RESISTANCE
10
D = 0.5
0.2
0.1
0.05
P
0.01
1
SINGLE PULSE
Test Type > Min Pad < Die Size 38x38 @ 75% mils
0.00010.0010.011101000.000001
t
, TIME (sec)
1
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
JA = 321.8 °C/W
2
10000.10.00001
Figure 9. Thermal Response
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4
MBR140SFT1
PACKAGE DIMENSIONS
SOD−123LF
CASE 498−01
ISSUE O
B
L
A
POLARITY INDICATOR
OPTIONAL AS NEEDED
C
D
H
K
E
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED
ON FLAT SECTION OF THE LEAD: BETWEEN 0.10
AND 0.25 MM FROM THE LEAD TIP.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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