ON Semiconductor MBR140SFT1 Technical data

MBR140SFT1

Surface Mount

Schottky Power Rectifier

Plastic SOD−123 Package

. . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc−dc converters, reverse battery protection, and ªOringº of multiple supply voltages and any other application where performance and size are critical. These state−of−the−art devices have the following features:

•Guardring for Stress Protection

•Low Forward Voltage

•125°C Operating Junction Temperature

•Epoxy Meets UL94, V0 at 1/8″

•Package Designed for Optimal Automated Board Assembly

•ESD Ratings: Machine Model, C

Human Body Model, 3B

Mechanical Characteristics

• Reel Options: MBR140SFT1 = 3,000 per 7″ reel/8 mm tape MBR140SFT3 = 10,000 per 13″ reel/8 mm tape

•Device Marking: L4F

•Polarity Designator: Cathode Band

•Weight: 11.7 mg (approximately)

•Case: Epoxy, Molded

•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES

40 VOLTS

SOD−123FL

CASE 498

PLASTIC

DEVICE MARKING

L4FD

L4F	= Specific Device Code
D	= Date Code

ORDERING INFORMATION

Device	Package	Shipping²
MBR140SFT1	SOD−123FL	3000/Tape & Reel
MBR140SFT3	SOD−123FL	10,000/Tape & Reel

²For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2003	1	Publication Order Number:
September, 2003 − Rev. 2		MBR140SFT1/D

MBR140SFT1

MAXIMUM RATINGS

Rating	Symbol		Value			Unit
Peak Repetitive Reverse Voltage	VRRM			40		V
Working Peak Reverse Voltage	VRWM
DC Blocking Voltage	VR
Average Rectified Forward Current (At Rated VR, TL = 112°C)	IO			1.0		A
Peak Repetitive Forward Current	IFRM			2.0		A
(At Rated VR, Square Wave, 100 kHz, TL = 95°C)
Non−Repetitive Peak Surge Current	IFSM			30		A
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage Temperature	Tstg	−55 to 150				°C
Operating Junction Temperature	TJ	−55 to 125				°C
Voltage Rate of Change (Rated VR, TJ = 25°C)	dv/dt		10,000			V/ s
THERMAL CHARACTERISTICS
Thermal Resistance − Junction−to−Lead (Note 1)	Rtjl			26		°C/W
Thermal Resistance − Junction−to−Lead (Note 2)	Rtjl			21
Thermal Resistance − Junction−to−Ambient (Note 1)	Rtja			325
Thermal Resistance − Junction−to−Ambient (Note 2)	Rtja			82
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2	VF	TJ = 25°C			TJ = 85°C	V
(IF = 0.1 A)		0.36			0.30
(IF = 1.0 A)		0.55			0.515
(IF = 3.0 A)		0.85			0.88
Maximum Instantaneous Reverse Current (Note 3), See Figure 4	IR	TJ = 25°C			TJ = 85°C	mA
(VR = 40 V)		0.5			25
(VR = 20 V)		0.15			18

3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2%.

http://onsemi.com

2

						MBR140SFT1
CURRENT (AMPS)	10						CURRENT (AMPS)	10
FORWARD	1.0		TJ = 125°C				FORWARD	1.0
		TJ = 85°C							TJ = 125°C
					TJ = 25°C
, INSTANTANEOUS							,INSTANTANEOUS	TJ = 85°C		T = 25°C
				TJ = −40 °C						J
	0.1		0.3	0.5	0.7	0.9		0.1
		0.1						0.1	0.3	0.5	0.7	0.9
		vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)						VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
F							F			(VOLTS)
i							I

Figure 1. Typical Forward Voltage

Figure 2. Maximum Forward Voltage

(AMPS)CURRENTREVERSE

100E−3

CURRENTREVERSE(AMPS)

1.0E+0

10E−3

TJ = 125°C

100E−3

TJ = 85°C

TJ = 85°C

1.0E−3

10E−3

100E−6

1.0E−3

TJ = 25°C

°

MAXIMUM

TJ = 25 C

I

10E−6

100E−6

,

R

1.0E−6

,

10E−6

0

10

20

30

40

R

0

10

20

30

40

I

VR, REVERSE VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current

Figure 4. Maximum Reverse Current

IO, AVERAGE FORWARD CURRENT (AMPS)

1.8								freq = 20 kHz			(WATTS)	1.0				Ipk/Io = SQUARE
1.6			dc									0.9
1.4			SQUARE								DISSIPATION	0.8		Ipk/Io = 10		Ipk/Io = 5		WAVE		dc
1.2												0.7
			WAVE
													Ipk/Io = 20
1												0.6
			Ipk/Io	=								0.5
0.8
			Ipk/Io = 10								POWER	0.4
			Ipk/Io	= 5
0.6												0.3
0.4			Ipk/Io = 20								AVERAGE	0.2
0.2
												0.1
0												0			0.6				1.4
25	35	45	55	65	75	85	95	105	115	125	,	0	0.2	0.4		0.8	1.0	1.2		1.6
			TL, LEAD TEMPERATURE (°C)								FO		IO, AVERAGE FORWARD CURRENT (AMPS)
											P

Figure 5. Current Derating

Figure 6. Forward Power Dissipation

http://onsemi.com

3