ON Semiconductor MBR130, NRVB130 User Manual

MBR130, NRVB130

Schottky Power Rectifier,
Surface Mount

1.0 A, 30 V, SOD-123 Package

This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work

alternative to leadless 34 package style.

with

Features

• Guardring for Stress Protection

• Low Forward Voltage

• 125°C Operating Junction Temperature

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Package Designed for Optimal Automated Board Assembly

• ESD Rating:

♦ Human Body Model = 3
♦ Machine Model = C

• NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable

• These are Pb−Free Packages*

Mechanical Characteristics

• Device Marking: S3

• Polarity Designator: Cathode Band

• Weight: 11.7 mg (approximately)

• Case: Epoxy, Molded

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

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SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES
30 VOLTS

SOD−123

CASE 425

STYLE 1

MARKING DIAGRAM

1

S3 = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

MBR130T1G,
NRVB130T1G

MBR130T3G,
NRVB130T3G

** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

S3 MG

G

SOD−123
(Pb−Free)

SOD−123
(Pb−Free)

3,000 /

Tape & Reel **

10,000 /

Tape & Reel ***

†

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014

April, 2013 − Rev. 5

1 Publication Order Number:

MBR130T1/D

MBR130, NRVB130

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Average Rectified Forward Current

(Rated V

) TL = 65°C

R

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
Storage Temperature Range T
Operating Junction Temperature T
Voltage Rate of Change (Rated VR) dv/dt 1000

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Ambient (Note 1) R
Thermal Resistance, Junction to Lead (Note 1) R

1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad.

V

V

I

F(AV)

I

RRM

RWM

V

R

FSM

stg

J

θ

JA

θ

JL

30 V

A

1.0
A

5.5

−65 to +125 °C

−65 to +125 °C
V/ms

230 °C/W
108 °C/W

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Typ Max Unit

Instantaneous Forward Voltage (Note 2)

(I

= 0.1 A, TJ = 25°C)

F

(IF = 0.7 A, TJ = 25°C)
(IF = 1.0 A, TJ = 25°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, T
(VR = 5 V, TC = 25°C)

= 25°C)

C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

V

F

I

R

−

−

0.47

0.35

0.45

−

60

V

mA

10

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2

MBR130, NRVB130

10

10

5

I

, INSTANTANEOUS FORWARD

0.01

5

200

JL

8

I

, REVERSE CURRENT (AMPS)

I

, AVERAGE FORWARD CURRENT (AMPS)

1

TJ = 125°C

CURRENT (AMPS)

F

0.1

0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.6
V

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

F

75°C 25°C

Figure 1. Maximum Forward Voltage

TJ = 125°C

0.001

0.0001

0.00001

0.000001

R

0.0000001
VR, REVERSE VOLTAGE (VOLTS)

75°C

25°C

0.55 0.65

1

T

J

CURRENT (AMPS)

, INSTANTANEOUS FORWARD

F

I

0.1

0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.6
V

F

180
160
140
120
100

80
60

C, CAPACITANCE (pF)

40
20

0

302520151050

= 125°C

75°C 25°C

0.55 0.6

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 2. Typical Forward Voltage

302520151050

VR, REVERSE VOLTAGE (VOLTS)

3

1.8

1.6

1.4

1.2
1

SQUARE

WAVE

0.8

0.6

0.4

0.2
0

F(AV)

Figure 5. Current Derating, Lead, R

Figure 3. Typical Reverse Current

dc

TL, LEAD TEMPERATURE (°C)

RATED

VOLTAGE

APPLIED

= 1085C/W

q

0.9

0.8

0.7

0.6

0.5

0.4

0.3

DISSIPATION (WATTS)

0.2

, AVERAGE FORWARD POWER

0.1

120100806040200

F(AV)

P

0

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3

Figure 4. Typical Capacitance

SQUARE

WAVE

I

, AVERAGE FORWARD CURRENT (AMPS)

F(AV)

Figure 6. Forward Power Dissipation

dc

1.41.210.80.60.40.20

1.6

1.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 5:1

SOD−123

CASE 425−04

ISSUE G

DATE 07 OCT 2009

D

1

H

E

2

E

b

A

A1

q

L

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

MILLIMETERS INCHES

DIM MIN NOM MAX

A 0.94 1.17 1.35 0.037

A1 0.00 0.05 0.10 0.000

b 0.51 0.61 0.71 0.020

---

c

E 2.54 2.69 2.84 0.100

H

E

L 0.25

q 00

---

1.60

3.56

3.68 0.140

--- ---

--- ---

°°° °

MIN NOM MAX

0.046

0.002

0.024

--- ---

0.15

0.055D 1.40 1.80

0.063

0.010

0.106

0.145

3.86

10 10

GENERIC

MARKING DIAGRAM*

0.053

0.004

0.028

0.006

0.071

0.112

0.152

--- ---

C

SOLDERING FOOTPRINT*

0.91

0.036

1

XXX = Specific Device Code
M = Date Code

XXXMG

G

G = Pb−Free Package

2.36

0.093

4.19

0.165

SCALE 10:1

mm

ǒ

inches

1.22

0.048

Ǔ

(Note: Microdot may be in either location)

*This information is generic. Please refer to device data

sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present.

STYLE 1:

PIN 1. CATHODE

2. ANODE

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

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rights of others.

© Semiconductor Components Industries, LLC, 2019

98ASB42927B

SOD−123

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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