ON Semiconductor MBR130, NRVB130 User Manual

MBR130, NRVB130

Schottky Power Rectifier, Surface Mount

1.0 A, 30 V, SOD-123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work

alternative to leadless 34 package style.

with

Features

• Guardring for Stress Protection

• Low Forward Voltage

• 125°C Operating Junction Temperature

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Package Designed for Optimal Automated Board Assembly

• ESD Rating:

♦ Human Body Model = 3 ♦ Machine Model = C

• NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These are Pb−Free Packages*

Mechanical Characteristics

• Device Marking: S3

• Polarity Designator: Cathode Band

• Weight: 11.7 mg (approximately)

• Case: Epoxy, Molded

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

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SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES 30 VOLTS

SOD−123

CASE 425

STYLE 1

MARKING DIAGRAM

S3 = Specific Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

MBR130T1G, NRVB130T1G

MBR130T3G, NRVB130T3G

** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

S3 MG

SOD−123 (Pb−Free)

3,000 /

Tape & Reel **

10,000 /

Tape & Reel ***

†

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

April, 2013 − Rev. 5

1 Publication Order Number:

MBR130T1/D

MBR130, NRVB130

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

Average Rectified Forward Current

(Rated V

) TL = 65°C

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Storage Temperature Range T Operating Junction Temperature T Voltage Rate of Change (Rated VR) dv/dt 1000

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Ambient (Note 1) R Thermal Resistance, Junction to Lead (Note 1) R

1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad.

F(AV)

RRM

RWM

FSM

stg

30 V

1.0 A

5.5

−65 to +125 °C

−65 to +125 °C V/ms

230 °C/W 108 °C/W

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Typ Max Unit

Instantaneous Forward Voltage (Note 2)

= 0.1 A, TJ = 25°C)

(IF = 0.7 A, TJ = 25°C) (IF = 1.0 A, TJ = 25°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, T (VR = 5 V, TC = 25°C)

= 25°C)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

−

0.47

0.35

0.45

−

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