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MBR120VLSFT1
Technical data
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ON Semiconductor MBR120VLSFT1 Technical data

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MBR120VLSFT1
l l
Surface Mount Schottky Power Rectifier
Plastic SOD−123 Package
Features
• Guardring for Stress Protection
• Optimized for Very Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• ESD Ratings: Machine Model, C;
Human Body Model, 3B
• Pb−Free Packages are Available
Mechanical Characteristics
• Reel Options: MBR120VLSFT1 = 3,000 per 7″ reel/8 mm tape
MBR120VLSFT3 = 10,000 per 13″ reel/8 mm tape
• Device Marking: L2V
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES 20 VOLTS
SOD−123FL
CASE 498
PLASTIC
MARKING DIAGRAM
M
L2V
G
G
L2V = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
MBR120VLSFT1 SOD−123FL 3000/Tape & Reel MBR120VLSFT1G SOD−123FL
(Pb−Free) MBR120VLSFT3 SOD−123FL 10000/Tape & Ree MBR120VLSFT3G SOD−123FL
(Pb−Free) †For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
3000/Tape & Reel
10000/Tape & Ree
†
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 2
1 Publication Order Number:
MBR120VLSFT1/D
MBR120VLSFT1
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (Rated VR) TL = 119°C
Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
Storage Temperature Range T Operating Junction Temperature T Voltage Rate of Change (Rated VR) dv/dt 1000
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
V
RRM
V
RWM
V
I
F(AV)
I
FSM
R
R R R
stg
20 V
R
1.0 A
45 A
−65 to +125 °C
J
−65 to +125 °C V/ms
tjl
tjl tja tja
26 21
325
82
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol TJ = 255C TJ = 855C Unit
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 0.1 A) (IF = 0.5 A) (IF = 1.0 A)
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
V
F
I
R
0.275
0.315
0.340
0.205
0.270
0.300
V
mA
0.60 15
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2
MBR120VLSFT1
I
, INSTANTANEOUS FORWARD CURRENT (AMPS)
5
I
, REVERSE CURRENT (AMPS)
0
10
TJ = 125°C
TJ = 85°C
1
TJ = −55°C
0.1 0
F
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.30.1 0.2 0.6
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
100E−3
TJ = 125°C
10E−3
TJ = 85°C
TJ = 25°C
0.50.4
10
TJ = 125°C
1
TJ = 85°C
TJ = 25°C
0.1
0.1
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
I
100E−3
10E−3
(VOLTS)
TJ = 125°C
TJ = 85°C
0.40.2 0.3 0.
1E−3
100E−6
R
10E−6
51015 2
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
, AVERAGE FORWARD CURRENT (AMPS)
O
I
4525
TL, LEAD TEMPERATURE (°C)
TJ = 25°C
dc
SQUARE
WAVE
Ipk/Io = p Ipk/Io = 5
Ipk/Io = 10 Ipk/Io = 20
65 125
85 105
freq = 20 kHz
1E−3
100E−6
10E−6
, MAXIMUM REVERSE CURRENT (AMPS)
R
200
I
0.5
0.4
0.3
0.2
0.1
, AVERAGE POWER DISSIPATION (WATTS)
FO
P
0
Ipk/Io = 10
Ipk/Io = 20
0
0.20 IO, AVERAGE FORWARD CURRENT (AMPS)
TJ = 25°C
51015
VR, REVERSE VOLTAGE (VOLTS)
Ipk/Io = 5
0.6 1.4
SQUARE
Ipk/Io = p
WAVE
1.00.4 0.8 1.2 1.6
dc
Figure 5. Current Derating
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3
Figure 6. Forward Power Dissipation
MBR120VLSFT1
r(t), TRANSIENT THERMAL RESISTANCE
0
500
TJ = 25°C
400
125 120 115 110
R
q
JA
105
300
100
130°C/W
95
200
90
235°C/W
85
TEMPERATURE (°C)
80
C, CAPACITANCE (pF)
100
0
48
120
1026 1814
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
, DERATED OPERATING
J
T
2016
75 70
65
324.9°C/W 400°C/W
6.02.0 4.0 8.0 10 2014 16 18
120
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re­verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = T
r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and
Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = T where r(t) = Rthja. For other power applications further calculations must be performed.
− r(t)(Pf + Pr) where
Jmax
= 25.6°C/W
− r(t)Pr,
Jmax
1000
100
10
0.1
D = 0.5
0.2
0.1
0.05
P
0.01
1
SINGLE PULSE
0.0001 0.001 0.01 1 10 1000.000001
Test Type > Min Pad < Die Size 38x38 @ 75% mils
0.10.00001
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
qJA = 321.8 °C/W
2
100
t1, TIME (sec)
Figure 9. Thermal Response
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4
MBR120VLSFT1
PACKAGE DIMENSIONS
SOD−123LF
CASE 498−01
ISSUE A
E
q
D
POLARITY INDICATOR OPTIONAL AS NEEDED
A1
A
L
b
H
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
DIMAMIN NOM MAX MIN
A1 0.00 0.05 0.10 0.000
b 0.70 0.90 1.10 0.028 c 0.10 0.15 0.20 0.004 D 1.50 1.65 1.80 0.059 E 2.50 2.70 2.90 0.098 L 0.55 0.75 0.95 0.022
H
E
q
MILLIMETERS
0.90 0.95 1.00 0.035
3.40 3.60 3.80 0.134 0.142 0.150
0° 8° 0° 8°
− −
INCHES
NOM MAX
0.037 0.039
0.002 0.004
0.035 0.043
0.006 0.008
0.065 0.071
0.106 0.114
0.030 0.037
q
c
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MBR120VLSFT1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your local Sales Representative.
MBR120VLSFT1/D
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