ON Semiconductor MBR120VLSFT1 Technical data

MBR120VLSFT1

Surface Mount

Schottky Power Rectifier

Plastic SOD−123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.

Features

•Guardring for Stress Protection

•Optimized for Very Low Forward Voltage

•125°C Operating Junction Temperature

•Epoxy Meets UL 94 V−0 @ 0.125 in

•Package Designed for Optimal Automated Board Assembly

•ESD Ratings: Machine Model, C;

Human Body Model, 3B

• Pb−Free Packages are Available

Mechanical Characteristics

• Reel Options: MBR120VLSFT1 = 3,000 per 7″ reel/8 mm tape MBR120VLSFT3 = 10,000 per 13″ reel/8 mm tape

•Device Marking: L2V

•Polarity Designator: Cathode Band

•Weight: 11.7 mg (approximately)

•Case: Epoxy, Molded

•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

•Device Meets MSL 1 Requirements

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES

20 VOLTS

SOD−123FL

CASE 498

PLASTIC

MARKING DIAGRAM

L2VMG

G

L2V = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device	Package	Shipping†
MBR120VLSFT1	SOD−123FL	3000/Tape & Reel
MBR120VLSFT1G	SOD−123FL	3000/Tape & Reel
	(Pb−Free)
MBR120VLSFT3	SOD−123FL	10000/Tape & Reel
MBR120VLSFT3G	SOD−123FL	10000/Tape & Reel
	(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

♥ Semiconductor Components Industries, LLC, 2005	1	Publication Order Number:
July, 2005 − Rev. 2		MBR120VLSFT1/D

MBR120VLSFT1

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Peak Repetitive Reverse Voltage	VRRM	20	V
Working Peak Reverse Voltage	VRWM
DC Blocking Voltage	VR
Average Rectified Forward Current	IF(AV)	1.0	A
(Rated VR) TL = 119°C
Non−Repetitive Peak Surge Current	IFSM	45	A
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
Storage Temperature Range	Tstg	−65 to +125	°C
Operating Junction Temperature	TJ	−65 to +125	°C
Voltage Rate of Change (Rated VR)	dv/dt	1000	V/ms

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic	Symbol	Value	Unit
Thermal Resistance − Junction−to−Lead (Note 1)	Rtjl	26	°C/W
Thermal Resistance − Junction−to−Lead (Note 2)	Rtjl	21
Thermal Resistance − Junction−to−Ambient (Note 1)	Rtja	325
Thermal Resistance − Junction−to−Ambient (Note 2)	Rtja	82

1.Mounted with minimum recommended pad size, PC Board FR4.

2.Mounted with 1 in. copper pad (Cu area 700 mm2).

ELECTRICAL CHARACTERISTICS

Characteristic	Symbol	TJ = 255C	TJ = 855C	Unit
Maximum Instantaneous Forward Voltage (Note 3)	VF	0.275	0.205	V
(IF = 0.1 A)
(IF = 0.5 A)		0.315	0.270
(IF = 1.0 A)		0.340	0.300
Maximum Instantaneous Reverse Current (Note 3)	IR	0.60	15	mA
(Rated DC Voltage)

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

http://onsemi.com

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