ON Semiconductor MBR120LSFT1 Technical data

MBR120LSFT1

Surface Mount
Schottky Power Rectifier

Plastic SOD–123 Package

...using the Schottky Barrier principle with a large area
metal–to–silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ac/dc and dc–dc
converters, reverse battery protection, and “Oring” of multiple supply
voltages and any other application where performance and size are
critical. These state–of–the–art devices have the following features:

• Guardring for Stress Protection

• Low Forward Voltage

• 125°C Operating Junction Temperature

• Epoxy Meets UL94, V0 at 1/8″

• Package Designed for Optimal Automated Board Assembly

• ESD Ratings: Machine Model, C

ESD Ratings: Human Body Model, 3B

Mechanical Characteristics

• Reel Options: MBR120LSFT1 = 3,000 per 7″ reel/8 mm tape

Reel Options: MBR120LSFT3 = 10,000 per 13″ reel/8 mm tape

• Device Marking: L2L

• Polarity Designator: Cathode Band

• Weight: 11.7 mg (approximately)

• Case: Epoxy, Molded

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

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SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES
20 VOLTS

SOD–123FL

CASE 498

PLASTIC

DEVICE MARKING

D

L2L

L2L = Specific Device Code
D = Date Code

ORDERING INFORMATION

Device Package Shipping

MBR120LSFT1 SOD–123FL

3000/Tape & Reel

 Semiconductor Components Industries, LLC, 2002

October, 2002 – Rev. 1

MBR120LSFT3 SOD–123FL 10,000/Tape & Reel

1 Publication Order Number:

MBR120LSFT1/D

MBR120LSFT1

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TL = 115°C) I
Peak Repetitive Forward Current

(At Rated V

, Square Wave, 100 kHz, TL = 110°C)

R

Non–Repetitive Peak Surge Current

(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage Temperature T
Operating Junction Temperature T
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/s

THERMAL CHARACTERISTICS

Thermal Resistance – Junction–to–Lead (Note 1)
Thermal Resistance – Junction–to–Lead (Note 2)
Thermal Resistance – Junction–to–Ambient (Note 1)
Thermal Resistance – Junction–to–Ambient (Note 2)

1. Mounted with minimum recommended pad size, PC Board FR4.

2. Mounted with 1 in. copper pad (Cu area 700 mm

2

).

V

V

I

I

RRM

RWM

V

R

O

FRM

FSM

stg

J

R

tjl

R

tjl

R

tja

R

tja

20 V

1.0 A

2.0 A

50 A

–55 to 150 °C
–55 to 125 °C

26
21

325

82

°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
(IF = 0.1 A)

(I

= 1.0 A)

F

= 3.0 A)

(I

F

Maximum Instantaneous Reverse Current (Note 3), See Figure 4
(VR = 20 V)

(V

= 10 V)

R

3. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤2%.

10

TJ = 85°C

1.0

TJ = 125°C

TJ = 25°C

10

1.0
TJ = 85°C

V

F

I

R

TJ = 125°C

TJ = 25°C TJ = 85°C

0.34

0.45

0.65

0.26

0.415

0.67

TJ = 25°C TJ = 85°C

0.40

0.10

25
18

V

mA

0.1

0.1

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

i

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

v

F

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

TJ = –40°C

0.70.3 0.5 0.9

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0.1

0.1

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE

V

I

F

2

TJ = 25°C

0.70.3 0.5 0.9

(VOLTS)

MBR120LSFT1

100E–3

10E–3

1.0E–3

100E–6

10E–6

, REVERSE CURRENT (AMPS)

R

I

1.0E–6

5.0 10 15

V

, REVERSE VOLTAGE (VOLTS)

R

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

, AVERAGE FORWARD CURRENT (AMPS)

O

I

4525

65 125

TL, LEAD TEMPERATURE (°C)

TJ = 125°C

TJ = 85°C

TJ = 25°C

dc

freq = 20 kHz

SQUARE

WAVE

Ipk/Io = 

Ipk/Io = 5

= 10

I

pk/Io

Ipk/Io = 20

85 105 145

1.0E+0

100E–3

10E–3

1.0E–3

100E–6

10E–6

, MAXIMUM REVERSE CURRENT (AMPS)

R

200

I

5.0 10 15

VR, REVERSE VOLTAGE (VOLTS)

0.7

0.6

0.5

Ipk/Io = 5

Ipk/Io = 10

0.4
Ipk/Io = 20

0.3

0.2

0.1

0

, AVERAGE POWER DISSIPATION (WATTS)

FO

P

0.20

0.6 1.4

IO, AVERAGE FORWARD CURRENT (AMPS)

TJ = 85°C

TJ = 25°C

Ipk/Io = 

1.00.4 0.8 1.2 1.6

SQUARE

WAVE

200

dc

Figure 5. Current Derating

Figure 6. Forward Power Dissipation

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3

MBR120LSFT1

1000

125
120

TJ = 25°C

115
110

R



105
100

100

95
90
85

TEMPERATURE (°C)

80

, DERATED OPERATING

C, CAPACITANCE (pF)

10

6.02.0 4.0 8.0 10

, REVERSE VOLTAGE (VOLTS)

V

R

120

Figure 7. Capacitance

J

T

75
70

65

2014 16 18

V

Figure 8. Typical Operating Temperature

324.9°C/W
400°C/W

6.02.0 4.0 8.0 10 2014 16 18

, DC REVERSE VOLTAGE (VOLTS)

R

120

Derating*

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re­verse voltage conditions. Calculations of T

may be calculated from the equation: TJ = T

T

J

This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.

therefore must include forward and reverse power effects. The allowable operating

J

– r(t)(Pf + Pr) where

Jmax

r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation

due to reverse bias under DC conditions only and is calculated as TJ = T

J

= 25.6°C/W

JA

130°C/W

235°C/W

– r(t)Pr,

Jmax

1000

100

0.1

r(t), TRANSIENT THERMAL RESISTANCE

10

D = 0.5

0.2

0.1

0.05

P

0.01

1

SINGLE PULSE

Test Type > Min Pad < Die Size 38x38 @ 75% mils

0.0001 0.001 0.01 1 10 1000.000001
t

, TIME (sec)

1

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

JA = 321.8 °C/W

2

10000.10.00001

Figure 9. Thermal Response

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4

MBR120LSFT1

PACKAGE DIMENSIONS

SOD–123LF

CASE 498–01

ISSUE O

B

L

A

POLARITY INDICATOR
OPTIONAL AS NEEDED

C

D

H

K

E

L

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH.

4. DIMENSIONS D AND J ARE TO BE MEASURED
ON FLAT SECTION OF THE LEAD: BETWEEN 0.10
AND 0.25 MM FROM THE LEAD TIP.

DIM MIN MAX MIN MAX

A 1.50 1.80 0.059 0.071
B 2.50 2.90 0.098 0.114
C 0.90 1.00 0.039
D 0.70 1.10 0.028 0.043
E 0.55 0.95 0.022 0.037
H 0.00 0.10 0.000 0.004
J 0.10 0.20 0.004 0.008
K 3.40 3.80 0.134 0.150
L 0 8 °°0 8 °°

INCHESMILLIMETERS

0.035

J

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5

MBR120LSFT1

RECOMMENDED FOOTPRINT FOR SOD–123FL

0.91

0.036

1.22

0.048

2.36

0.093

4.19

0.165

SOD–123

mm

inches

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6

Notes

MBR120LSFT1

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7

MBR120LSFT1

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make

changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: [phone] or 800–344–3860 Toll Free USA/Canada
Fax: [phone] or 800–344–3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

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JAPAN: ON Semiconductor, Japan Customer Focus Center

2–9–1 Kamimeguro, Meguro–ku, Tokyo, Japan 153–0051

Phone: [phone]
Email: [e-mail]

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local
Sales Representative.

MBR120LSFT1/D

8

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