ON Semiconductor MBR120LSFT1 Technical data

MBR120LSFT1
Surface Mount Schottky Power Rectifier
Plastic SOD–123 Package
Guardring for Stress Protection
Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL94, V0 at 1/8
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C
ESD Ratings: Human Body Model, 3B
Mechanical Characteristics
Reel Options: MBR120LSFT1 = 3,000 per 7″ reel/8 mm tape
Reel Options: MBR120LSFT3 = 10,000 per 13 reel/8 mm tape
Device Marking: L2L
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES 20 VOLTS
SOD–123FL
CASE 498
PLASTIC
DEVICE MARKING
D
L2L
L2L = Specific Device Code D = Date Code
ORDERING INFORMATION
Device Package Shipping
MBR120LSFT1 SOD–123FL
3000/Tape & Reel
Semiconductor Components Industries, LLC, 2002
October, 2002 – Rev. 1
MBR120LSFT3 SOD–123FL 10,000/Tape & Reel
1 Publication Order Number:
MBR120LSFT1/D
MBR120LSFT1
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 115°C) I Peak Repetitive Forward Current
(At Rated V
, Square Wave, 100 kHz, TL = 110°C)
R
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz) Storage Temperature T Operating Junction Temperature T Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/s
THERMAL CHARACTERISTICS
Thermal Resistance – Junction–to–Lead (Note 1) Thermal Resistance – Junction–to–Lead (Note 2) Thermal Resistance – Junction–to–Ambient (Note 1) Thermal Resistance – Junction–to–Ambient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
V
V
I
I
RRM
RWM
V
R
O
FRM
FSM
stg
J
R
tjl
R
tjl
R
tja
R
tja
20 V
1.0 A
2.0 A
50 A
–55 to 150 °C –55 to 125 °C
26 21
325
82
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 (IF = 0.1 A)
(I
= 1.0 A)
F
= 3.0 A)
(I
F
Maximum Instantaneous Reverse Current (Note 3), See Figure 4 (VR = 20 V)
(V
= 10 V)
R
3. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤2%.
10
TJ = 85°C
1.0
TJ = 125°C
TJ = 25°C
10
1.0 TJ = 85°C
V
F
I
R
TJ = 125°C
TJ = 25°C TJ = 85°C
0.34
0.45
0.65
0.26
0.415
0.67
TJ = 25°C TJ = 85°C
0.40
0.10
25 18
V
mA
0.1
0.1
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
i
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
v
F
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
TJ = –40°C
0.70.3 0.5 0.9
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0.1
0.1
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
V
I
F
2
TJ = 25°C
0.70.3 0.5 0.9
(VOLTS)
MBR120LSFT1
100E–3
10E–3
1.0E–3
100E–6
10E–6
, REVERSE CURRENT (AMPS)
R
I
1.0E–6
5.0 10 15
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 0
, AVERAGE FORWARD CURRENT (AMPS)
O
I
4525
65 125
TL, LEAD TEMPERATURE (°C)
TJ = 125°C
TJ = 85°C
TJ = 25°C
dc
freq = 20 kHz
SQUARE
WAVE
Ipk/Io =
Ipk/Io = 5
= 10
I
pk/Io
Ipk/Io = 20
85 105 145
1.0E+0
100E–3
10E–3
1.0E–3
100E–6
10E–6
, MAXIMUM REVERSE CURRENT (AMPS)
R
200
I
5.0 10 15
VR, REVERSE VOLTAGE (VOLTS)
0.7
0.6
0.5
Ipk/Io = 5
Ipk/Io = 10
0.4 Ipk/Io = 20
0.3
0.2
0.1
0
, AVERAGE POWER DISSIPATION (WATTS)
FO
P
0.20
0.6 1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
TJ = 85°C
TJ = 25°C
Ipk/Io =
1.00.4 0.8 1.2 1.6
SQUARE
WAVE
200
dc
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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