ON Semiconductor MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Technical data

MBD110DWT1G,
MBD330DWT1G,
MBD770DWT1G

Preferred Device

Dual Schottky Barrier
Diodes

Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT−363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small
six−leaded package. The SOT−363 is ideal for low−power surface
mount applications where board space is at a premium, such as
portable products.

Surface Mount Comparisons:

SOT−363 SOT−23

Area (mm2) 4.6 7.6

Max Package PD (mW) 120 225

Device Count 2 1

Space Savings:

Package 1  SOT−23 2  SOT−23

SOT−363 40% 70%

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Anode 1 6 Cathode

N/C 2 5 N/C

Cathode 3 4 Anode

1

SC−88 / SOT−363

CASE 419B

STYLE 6

The MBD110DW, MBD330DW, and MBD770DW devices are
spin−offs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT−23 devices. They are designed for
high−efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.

Features

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage MBD110DWT1G

MBD330DWT1G
MBD770DWT1G

Forward Power Dissipation TA = 25°C P

Junction Temperature T

Storage Temperature Range T

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

V

R

F

J

stg

7.0
30
70

120 mW

−55 to +125 °C

−55 to +150 °C

V

MARKING DIAGRAM

6

xx M G

G

1

xx = Device Code

Refer to Ordering Table,

page 2
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

© Semiconductor Components Industries, LLC, 2009

October, 2009 − Rev. 6

1 Publication Order Number:

MBD110DWT1/D

MBD110DWT1G, MBD330DWT1G, MBD770DWT1G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

Reverse Breakdown Voltage

= 10 mA) MBD110DWT1G

(I

R

MBD330DWT1G
MBD770DWT1G

Diode Capacitance

(V

= 0, f = 1.0 MHz, Note 1) MBD110DWT1G

R

Total Capacitance

(V

= 15 Volts, f = 1.0 MHz) MBD330DWT1G

R

(VR = 20 Volts, f = 1.0 MHz) MBD770DWT1G

Reverse Leakage

(V

= 3.0 V) MBD110DWT1G

R

(VR = 25 V) MBD330DWT1G
(VR = 35 V) MBD770DWT1G

Noise Figure

(f = 1.0 GHz, Note 2) MBD110DWT1G

Forward Voltage

(I

= 10 mA) MBD110DWT1G

F

(I

= 1.0 mA) MBD330DWT1G

F

(I

= 10 mA)

F

(I

= 1.0 mA) MBD770DWT1G

F

(I

= 10 mA)

F

Symbol Min Typ Max Unit

V

(BR)R

C

D

C

T

I

R

NF

7.0
30
70

10

−

−

− 0.88 1.0

−

−

−

−

−

0.9

0.5

0.02
13

9.0

−

−

−

1.5

1.0

0.25
200
200

V

pF

pF

mA
nA
nA

dB

− 6.0 −

V

F

−

−

−

−

−

0.5

0.38

0.52

0.42

0.7

0.6

0.45

0.6

0.5

1.0

V

ORDERING INFORMATION

Device Marking Package Shipping

MBD110DWT1G

M4

MBD330DWT1G

T4

MBD770DWT1G

H5

SC−88 / SOT−363

(Pb−Free)

SC−88 / SOT−363

(Pb−Free)

SC−88 / SOT−363

(Pb−Free)

3000 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2