ON Semiconductor MAC228A Technical data
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MAC228A Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for industrial and consumer applications for full
wave control of ac loads such as appliance controls, heater controls,
motor controls, and other power switching applications.
• Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking
Current Sources
• Four Mode Triggering for Drive Circuits that Source Current
• All Diffused and Glass–Passivated Junctions for Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance and High Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading
• Device Marking: Logo, Device T ype, e.g., MAC228A4, Date Code
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TRIACS
8 AMPERES RMS
200 thru 800 VOLTS
MT2
MT1
G
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Peak Repetitive Off–State V oltage
(TJ = –40 to 110°C, Sine Wave, 50 to
60 Hz, Gate Open) MAC228A4
On-State RMS Current (TC = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non–Repetitive Surge Current
(One Full Cycle Sine Wave,
60 Hz, TJ = 110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
Peak Gate Current
(t v 2 µs, TC = 80°C)
Peak Gate Voltage
(t v 2 µs, TC = 80°C)
Peak Gate Power
(t v 2 µs, TC = 80°C)
Average Gate Power
(t v 8.3 ms, TC = 80°C)
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque — 8.0 in. lb.
(1) V
and V
DRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
RRM
= 25°C unless otherwise noted)
J
(1)
MAC228A6
MAC228A8
MAC228A10
for all types can be applied on a continuous basis. Blocking
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I2t 26 A2s
I
GM
V
GM
P
GM
P
G(AV)
J
stg
200
400
600
800
8.0 Amps
80 Amps
"
2.0 Amps
"
10 Volts
20 Watts
0.5 Watt
–40 to 110 °C
–40 to 150 °C
Volts
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
2
3 Gate
4
Main Terminal 1
Main Terminal 2
Main Terminal 2
ORDERING INFORMATION
Device Package Shipping
MAC228A4 TO220AB 500/Box
MAC228A6 TO220AB
MAC228A8 TO220AB 500/Box
MAC228A10 TO220AB 500/Box
Preferred devices are recommended choices for future use
and best overall value.
500/Box
Semiconductor Components Industries, LLC, 1999
February , 2000 – Rev. 1
1 Publication Order Number:
MAC228A/D
MAC228A Series
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
R
R
θJC
θJA
L
2.0
62.5
260 °C
°C/W
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted; Electricals apply in both directions)
C
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated V
DRM
, V
; Gate Open) TJ = 25°C
RRM
ON CHARACTERISTICS
Peak On-State Voltage
(ITM = "11 A Peak, Pulse Width v2 ms, Duty Cycle v2%)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
Gate Non–Trigger Voltage (Continuous dc)
(VD = 12 V, TC = 110°C, RL = 100 Ω)
All Four Quadrants
Holding Current
(VD = 12 Vdc, Initiating Current = "200 mA, Gate Open)
Gate–Controlled Turn–On Time
(VD = Rated V
, ITM = 16 A Peak, IG = 30 mA)
DRM
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(VD = Rated V
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
, Exponential Waveform, TC = 110°C)
DRM
, ITM = 11.3 A,
DRM
TJ = 110°C
Symbol Min Typ Max Unit
I
,
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
dv/dt — 25 — V/µs
dv/dt(c) — 5.0 — V/µs
—
—
— — 1.8 Volts
—
—
—
—
0.2 — — Volts
— — 15 mA
— 1.5 — µs
—
—
—
—
—
—
10
2.0
5.0
10
2.0
2.5
µA
mA
mA
Volts
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Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
MAC228A Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
on state
I
at V
RRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
RRM
Quadrant 3
MainTerminal 2 –
V
TM
+ Current
I
H
V
I
H
off state
TM
Quadrant 1
MainTerminal 2 +
I
at V
DRM
DRM
+ Voltage
(+) MT2
Quadrant II Quadrant I
IGT – + I
Quadrant III Quadrant IV
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
(–) I
GATE
(–) I
GATE
GT
MT1
REF
(–) MT2
GT
MT1
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
(+) I
GATE
(+) I
GATE
(+) MT2
GT
MT1
REF
(–) MT2
GT
MT1
REF
GT
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