ON Semiconductor MAC224A Technical data

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MAC224A Series

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications such as

lighting systems, heater controls, motor controls and power supplies.

• Blocking Voltage to 800 Volts

• All Diffused and Glass-Passivated Junctions for Parameter Uniformity

and Stability

• Gate Triggering Guaranteed in Four Modes

• High Current and Surge Ratings

• Device Marking: Logo, Device T ype, e.g., MAC224A4, Date Code

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TRIACS

40 AMPERES RMS

200 thru 800 VOLTS

MAXIMUM RATINGS (T

Rating

Peak Repetitive Off–State V oltage

(TJ = –40 to 125°C, Sine Wave 50 to
60 Hz, Gate Open)

On–State RMS Current (TC = 75°C)

(Full Cycle Sine Wave 50 to 60 Hz)

Peak Non–repetitive Surge Current

(One Full Cycle, 60 Hz, TJ = 125°C)

Circuit Fusing Considerations

(t = 8.3 ms)

Peak Gate Current

(Pulse Width v 2.0 µsec; TC = 75°C)

Peak Gate Voltage

(Pulse Width v 2.0 µsec; TC = 75°C)

Peak Gate Power

(Pulse Width v 2.0 µsec; TC = 75°C)

Average Gate Power

(TC = 75°C, t = 8.3 ms)
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque — 8.0 in. lb.

(1) V

(2) This device is rated for use in applications subject to high surge conditions.

, V

DRM

voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

Care must be taken to insure proper heat sinking when the device is to be
used at high sustained currents. (See Figure 1 for maximum case
temperatures.)

for all types can be applied on a continuous basis. Blocking

RRM

= 25°C unless otherwise noted)

J

Symbol Value Unit

(1)

MAC224A4
MAC224A6
MAC224A8
MAC224A10

(2)

V

DRM,

V

RRM

I

T(RMS)

I

TSM

I2t 500 A2s

I

GM

V

GM

P

GM

P

G(AV)

J

stg

Volts

200
400
600
800

40 A

350 A

"

2.0 A

"

10 Volts

20 Watts

0.5 Watts

–40 to 125 °C
–40 to 150 °C

MT2

1

2

3

TO–220AB

CASE 221A

STYLE 4

MT1

G

4

PIN ASSIGNMENT

1
2
3 Gate
4

Main Terminal 1
Main Terminal 2

Main Terminal 2

ORDERING INFORMATION

Device Package Shipping

MAC224A4 TO220AB 500/Box
MAC224A6 TO220AB
MAC224A8 TO220AB

MAC224A10 TO220AB 500/Box

Preferred devices are recommended choices for future use
and best overall value.

500/Box
500/Box

 Semiconductor Components Industries, LLC, 1999

February , 2000 – Rev. 1

1 Publication Order Number:

MAC224A/D

MAC224A Series

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

R
R

θJC
θJA

L

1.0
60

260 °C

°C/W

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted; Electricals apply in both directions)

C

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(Rated V

DRM

, V

; Gate Open) TJ = 25°C

RRM

ON CHARACTERISTICS

Peak On–State Voltage

(ITM = "56 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(+), G(–)
MT2(–), G(+)

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+)

Gate Non-Trigger Voltage

(VD = 12 V, TJ = 125°C, RL = 100 Ω)
All Quadrants

Holding Current

(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)

Gate Controlled Turn-On Time

(VD = Rated V

, ITM = 56 A Peak, IG = 200 mA)

DRM

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off-State Voltage

(VD = Rated V

Critical Rate of Rise of Commutation Voltage

(VD = Rated V
di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C)

, Exponential Waveform, TC = 125°C)

DRM

, ITM = 56 A Peak, Commutating

DRM

TJ = 125°C

Symbol Min Typ Max Unit

I

DRM,

I

RRM

V

TM

I

GT

V

GT

V

GD

I

H

t

gt

dv/dt — 50 — V/µs

dv/dt(c) — 5.0 — V/µs

—
—

— 1.4 1.85 Volts

—
—

—
—

0.2 — — Volts

— 30 75 mA

— 1.5 — µs

—
—

25
40

1.1

1.3

10

2.0

50
75

2.0

2.5

µA

mA

mA

Volts

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Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current

Maximum On State Voltage
Holding Current

MAC224A Series

Voltage Current Characteristic of Triacs

(Bidirectional Device)

on state

I

at V

RRM

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

+

RRM

Quadrant 3
MainTerminal 2 –

V

TM

+ Current

I

H

V

I

H

off state

TM

Quadrant 1
MainTerminal 2 +

I

at V

DRM

DRM

+ Voltage

(+) MT2

Quadrant II Quadrant I

IGT – + I

Quadrant III Quadrant IV

All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.

(–) I

GATE

(–) I

GATE

GT

MT1

REF

(–) MT2

GT

MT1

REF

–

MT2 NEGATIVE

(Negative Half Cycle)

(+) I

GATE

(+) I

GATE

(+) MT2

GT

MT1

REF

(–) MT2

GT

MT1

REF

GT

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