ON Semiconductor MAC16HCD, MAC16HCM, MAC16HCN Technical data

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MAC16HCD, MAC16HCM,
MAC16HCN

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full–wave,
silicon gate–controlled devices are needed.

• High Commutating di/dt and High Immunity to dv/dt @ 125°C

• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3

• Blocking Voltage to 800 Volts

• On–State Current Rating of 16 Amperes RMS at 80°C

• High Surge Current Capability — 150 Amperes

• Industry Standard TO–220AB Package for Ease of Design

• Glass Passivated Junctions for Reliability and Uniformity

• Device Marking: Logo, Device T ype, e.g., MAC16HCD, Date Code

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TRIACS

16 AMPERES RMS

400 thru 800 VOLTS

MT2

MT1

G

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Peak Repetitive Off–State V oltage

(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)

On–State RMS Current

(Full Cycle Sine Wave 50 to 60 Hz;
TC = 80°C)

Peak Non-Repetitive Surge Current

(One Full Cycle, 60 Hz, TJ = 125°C)

Circuit Fusing Consideration

(t = 8.33 ms)

Peak Gate Power

(Pulse Width ≤ 1.0 µs, TC = 80°C)

Average Gate Power

(t = 8.3 ms, TC = 80°C)

Operating Junction Temperature Range T

Storage Temperature Range T

(1) V

and V

DRM

voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

RRM

= 25°C unless otherwise noted)

J

(1)

MAC16HCD
MAC16HCM
MAC16HCN

(2)

for all types can be applied on a continuous basis. Blocking

V

DRM,

V

RRM

400
600
800

I

T(RMS)

I

TSM

I2t 93 A2sec

P

GM

P

G(AV)

J

stg

16 A

150 A

20 Watts

0.5 Watts

–40 to

+125

–40 to

+150

Volts

°C

°C

4

1

2

3

TO–220AB

CASE 221A

STYLE 4

PIN ASSIGNMENT

1
2
3 Gate
4

Main Terminal 1
Main Terminal 2

Main Terminal 2

ORDERING INFORMATION

Device Package Shipping

MAC16HCD TO220AB 50 Units/Rail
MAC16HCM TO220AB
MAC16HCN TO220AB

50 Units/Rail
50 Units/Rail

 Semiconductor Components Industries, LLC, 1999

February , 2000 – Rev. 0

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

MAC16HC/D

MAC16HCD, MAC16HCM, MAC16HCN

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance

— Junction to Case
— Junction to Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Peak Repetitive Blocking Current TJ = 25°C

(VD = Rated V

DRM

, V

, Gate Open) TJ = 125°C

RRM

ON CHARACTERISTICS

Peak On–State Voltage
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)
MT2(+), G(–)

MT2(–), G(–)
Holding Current (VD = 12 V, Gate Open, Initiating Current = "150 mA) I
Latch Current (VD = 12 V, IG = 50 mA)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)
Gate Trigger V oltage (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

(1)

(ITM = "21 A Peak) V

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

(VD = 400 V, ITM = 6A, Commutating dv/dt = 20 V/µs, CL = 10 µF

Gate Open, TJ = 125°C, f = 250 Hz, with Snubber) LL = 40 mH
Critical Rate of Rise of Off–State V oltage

(VD = Rated V
Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz

(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

, Exponential Waveform, Gate Open, TJ = 125°C)

DRM

= 25°C unless otherwise noted; Electricals apply in both directions)

J

Symbol Min Typ Max Unit

I

,

DRM

I

RRM

TM

I

GT

H

I

L

V

GT

(di/dt)c 15 — — A/ms

dv/dt 750 — — V/µs

di/dt — — 10 A/µs

0.5

0.5

0.5

R

θJC

R

θJA

L

—
—

— — 1.6 Volts

10
10
10

— 20 50 mA

—
—
—

0.80

0.73

0.82

—
—

16
18
22

33
36
33

2.2

62.5
260 °C

0.01

2.0

50
50
50

60
80
60

1.5

1.5

1.5

°C/W

mA

mA

mA

Volts

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2

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current

Maximum On State Voltage
Holding Current

MAC16HCD, MAC16HCM, MAC16HCN

Voltage Current Characteristic of Triacs

(Bidirectional Device)

+ Current

on state

I

at V

RRM

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

+

RRM

Quadrant 3
MainTerminal 2 –

I

H

V

TM

V

I

H

off state

TM

Quadrant 1
MainTerminal 2 +

I

at V

DRM

DRM

+ Voltage

(+) MT2

Quadrant II Quadrant I

IGT – + I

Quadrant III Quadrant IV

All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.

(–) I

GATE

(–) I

GATE

GT

MT1

REF

(–) MT2

GT

MT1

REF

–

MT2 NEGATIVE

(Negative Half Cycle)

(+) I

GATE

(+) I

GATE

(+) MT2

GT

MT1

REF

(–) MT2

GT

MT1

REF

GT

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3

MAC16HCD, MAC16HCM, MAC16HCN

100

1.10

Q3

Q3

Q2

Q1

10

1.00

0.90

0.80

0.70

Q1

Q2

, GATE TRIGGER CURRENT (mA)

GT

I

1
–40 –10 20 50 80 110 125

–25 5 35 65 95

TJ, JUNCTION TEMPERATURE (°C)

Figure 1. T ypical Gate Trigger Current

versus Junction T emperature

100

MT2 NEGATIVE

10

MT2 POSITIVE

HOLDING CURRENT (mA)

1

–40 –10 20 50 80 110 125–25 5 35 65 95 –40 –10 20 50 80 110 125–25 5 35 65 95

TJ, JUNCTION TEMPERATURE (°C)

0.60

, GATE TRIGGER VOLTAGE (VOLT)

GT

0.50

V

0.40
–40 –10 20 50 80 110 125–25 5 35 65 95

TJ, JUNCTION TEMPERATURE (°C)

Figure 2. T ypical Gate Trigger Voltage

versus Junction T emperature

100

10

LATCHING CURRENT (mA)

1

TJ, JUNCTION TEMPERATURE (°C)

Q2
Q1
Q3

Figure 3. Typical Holding Current

versus Junction T emperature

, A VERAGE POWER DISSIPATION (WATTS)

(AV)

P

24
22
20
18
16
14
12
10

8
6
4
2

0

125
120

115

180°

121086420

60°, 30°

90°

DC

1614

110
105
100

95
90
85

, CASE TEMPERATURE (C)°

C

T

80
75

70

I

, RMS ON-STATE CURRENT (AMP)

T(RMS)

120°

Figure 5. Typical RMS Current Derating

Figure 4. T ypical Latching Current

versus Junction T emperature

180°

120°

30°

121086420

I

, AVERAGE ON-STATE CURRENT (AMP)

T(AV)

Figure 6. On-State Power Dissipation

DC

90°

60°

14 16

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4

100

1

TYPICAL @
TJ = 25°C

MAC16HCD, MAC16HCM, MAC16HCN

MAXIMUM @ TJ = 125°C

10

1

, INSTANTANEOUS ON-STATE CURRENT (AMP)

T

I

0.1

MAXIMUM @ TJ = 25°C

0.5 1 1.5 2 2.5 3 3.5

0

VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. T ypical On-State Characteristics

0.1

(NORMALIZED)

r(t), TRANSIENT THERMAL RESIST ANCE

0.01

1000010001001010.1

t, TIME (ms)

Figure 8. T ypical Thermal Response

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5

MAC16HCD, MAC16HCM, MAC16HCN

P ACKAGE DIMENSIONS

TO–220AB

CASE 221A–09

ISSUE Z

SEATING

–T–

PLANE

T

4

Q

123

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

MILLIMETERSINCHES

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6

Notes

MAC16HCD, MAC16HCM, MAC16HCN

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7

MAC16HCD, MAC16HCM, MAC16HCN

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability ,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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MAC16HC/D