ON Semiconductor MAC15 Technical data
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MAC15 Series
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid–state relays, motor controls, heating controls and power
supplies; or wherever full–wave silicon gate controlled solid–state
devices are needed. Triac type thyristors switch from a blocking to a
conducting state for either polarity of applied main terminal voltage
with positive or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC15 Series) or
Four Modes (MAC15A Series)
• Device Marking: Logo, Device T ype, e.g., MAC15A6, Date Code
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TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MAXIMUM RATINGS (T
Rating
Peak Repetitive Off–State V oltage
(TJ = –40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open)
Peak Gate Voltage
(Pulse Width v 1.0 µsec; TC = 90°C)
On–State Current RMS
Full Cycle Sine Wave 50 to 60 Hz
(TC = +90°C)
Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A2s
Peak Non–repetitive Surge Current
(One Full Cycle Sine Wave,
60 Hz, TC = +80°C)
Preceded and followed by rated current
Peak Gate Power (TC = +80°C,
Pulse Width = 1.0 µs)
Average Gate Power
(TC = +80°C, t = 8.3 ms)
Peak Gate Current
(Pulse Width v 1.0 µsec; TC = 90°C)
Operating Junction Temperature Range T
Storage Temperature Range T
(1) V
DRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
MAC15A6
MAC15–8, MAC15A8
MAC15–10, MAC15A10
and V
RRM
= 25°C unless otherwise noted)
J
Symbol Value Unit
(1)
for all types can be applied on a continuous basis. Blocking
V
DRM,
V
RRM
V
GM
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
J
stg
400
600
800
10 Volts
15 A
150 A
20 Watts
0.5 Watts
2.0 A
–40 to
+125
–40 to
+150
Volts
°C
°C
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
2
3 Gate
4
Main Terminal 1
Main Terminal 2
Main Terminal 2
ORDERING INFORMATION
Device Package Shipping
MAC15–8 TO220AB 500/Box
MAC15–10 TO220AB
MAC15A6 TO220AB
MAC15A8 TO220AB 500/Box
MAC15A10 TO220AB 500/Box
Preferred devices are recommended choices for future use
and best overall value.
500/Box
500/Box
Semiconductor Components Industries, LLC, 1999
February , 2000 – Rev. 1
1 Publication Order Number:
MAC15A4/D
MAC15 Series
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
R
R
θJC
θJA
L
2.0
62.5
260 °C
°C/W
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted; Electricals apply in both directions)
C
OFF CHARACTERISTICS
Peak Blocking Current TJ = 25°C
(VD = Rated V
DRM
, V
; Gate Open) TJ = 125°C
RRM
ON CHARACTERISTICS
, ITM = 17 A)
DRM
(1)
(ITM = "21 A Peak) V
Peak On–State Voltage
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A’’ SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A’’ SUFFIX ONLY
Gate Non–Trigger Voltage
(VD = 12 V, RL = 100 Ohms, TJ = 110°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A’’ SUFFIX ONLY
Holding Current
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
Turn-On Time
(VD = Rated V
(IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
Gate Unenergized, TC = 80°C)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
DRM
Symbol Min Typ Max Unit
I
DRM,
I
RRM
TM
I
GT
V
GT
V
GD
I
H
t
gt
dv/dt(c) — 5.0 — V/µs
—
—
— 1.3 1.6 Volts
—
—
—
—
—
—
—
—
0.2
0.2
— 6.0 40
— 1.5 — µs
—
—
—
—
—
—
0.9
0.9
1.1
1.4
—
—
10
2.0
50
50
50
75
2.5
—
—
µA
mA
mA
Volts
2
2
2
Volts
mA
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Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
MAC15 Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
on state
I
at V
RRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
RRM
Quadrant 3
MainTerminal 2 –
V
TM
+ Current
I
H
V
I
H
off state
TM
Quadrant 1
MainTerminal 2 +
I
at V
DRM
DRM
+ Voltage
(+) MT2
Quadrant II Quadrant I
IGT – + I
Quadrant III Quadrant IV
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
(–) I
GATE
(–) I
GATE
GT
MT1
REF
(–) MT2
GT
MT1
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
(+) I
GATE
(+) I
GATE
(+) MT2
GT
MT1
REF
(–) MT2
GT
MT1
REF
GT
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