ON Semiconductor MAC12SM, MAC12SN Technical data

查询MAC12供应商

MAC12SM, MAC12SN

Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.

• Sensitive Gate Allows Triggering by Microcontrollers and other

Logic Circuits

• Blocking Voltage to 800 Volts

• On-State Current Rating of 12 Amperes RMS at 70°C

• High Surge Current Capability - 90 Amperes

• Rugged, Economical TO220AB Package

• Glass Passivated Junctions for Reliability and Uniformity

• Maximum Values of I

• High Commutating di/dt - 8.0 A/ms Minimum at 110°C

• Immunity to dV/dt - 15 V/sec Minimum at 110°C

• Operational in Three Quadrants: Q1, Q2, and Q3

• Device Marking: Logo, Device Type, e.g., MAC12SM, Date Code

, VGT and IH Specified for Ease of Design

GT

http://onsemi.com

TRIACS

12 AMPERES RMS

600 thru 800 VOLTS

MT2

4

MT1

G

MARKING
DIAGRAM

MAXIMUM RATINGS (T

Peak Repetitive Off-State Voltage (Note 1)

(T

= -40 to 110°C, Sine Wave,

J

50 to 60 Hz, Gate Open)

On-State RMS Current

(All Conduction Angles; T

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,
T

= 110°C)

J

Circuit Fusing Consideration

(t = 8.33 ms)

Peak Gate Power

(Pulse Width = 1.0 sec, T

Average Gate Power

(t = 8.3 msec, T

Operating Junction Temperature Range T

Storage Temperature Range T

1. (V

and V

DRM

voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

RRM

= 25°C unless otherwise noted)

J

Rating

MAC12SM
MAC12SN

= 70°C)

C

= 70°C)

C

= 70°C)

C

for all types can be applied on a continuous basis. Blocking

Symbol Value Unit

V

DRM,

V

RRM

600
800

I

T(RMS)

I

TSM

I2t 33 A2sec

P

GM

P

G(AV)

J

stg

12 A

90 A

16 W

0.35 W

- 40 to
110

- 40 to
150

°C

°C

MAC12xx

ALYWW

V

1

2

3

TO-220AB

CASE 221A

Style 4

xx = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week

PIN ASSIGNMENT

1
2
3 Gate
4

Main Terminal 1
Main Terminal 2

Main Terminal 2

ORDERING INFORMATION

Device Package Shipping

MAC12SM TO220AB 50 Units/Rail

 Semiconductor Components Industries, LLC, 2003

April, 2003 - Rev. 2

MAC12SN TO220AB

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

50 Units/Rail

MAC12SM/D

MAC12SM, MAC12SN

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance - Junction to Case

- Junction to Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

R



JC

R



JA

L

2.2

°C/W

62.5
260 °C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted; Electricals apply in both directions)

J

Characteristic

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(V

= Rated V

D

DRM

, V

; Gate Open) TJ = 25°C

RRM

ON CHARACTERISTICS

Peak On-State Voltage

(1)

(ITM = ±17 A)

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 )

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)

Holding Current

(V

= 12 V, Gate Open, Initiating Current = ±200 mA)

D

Latching Current (VD = 12 V, IG = 5 mA)

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)

DYNAMIC CHARACTERISTICS

Critical Rate of Change of Commutating Current

(V

= 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/s, Gate Open,

D

= 110°C, f = 500 Hz, Snubber: Cs = 0.01 f, Rs = 15 )

T

J

Critical Rate of Rise of Off-State Voltage

(V

= 67% V

D

= 110°C)

T

J

, Exponential Waveform, RGK = 1 K,

DRM

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40 sec; diG/dt = 1 A/sec; Igt = 100 mA;
f = 60 Hz

2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

= 110°C

T

J

Symbol Min Typ Max Unit

I

DRM

I

RRM

V

TM

I

GT

I

H

I

L

V

GT

(di/dt)

,

-

-

-

-

0.01

2.0

- - 1.85 V

-

-

-

1.5

2.5

2.7

5.0

5.0

5.0

- 2.5 10 mA

-

-

-

0.45

0.45

0.45

c

8.0 10 - A/ms

3.0

5.0

3.0

0.68

0.62

0.67

15
20
15

1.5

1.5

1.5

mA

mA

mA

V

dV/dt 15 40 - V/s

di/dt - - 10 A/s

http://onsemi.com

2

Symbol Parameter

V
I

DRM

V
I

RRM

V
I

H

DRM

RRM

TM

Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current

Maximum On State Voltage
Holding Current

MAC12SM, MAC12SN

Voltage Current Characteristic of Triacs

(Bidirectional Device)

on state

at V

I

RRM

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

+

RRM

Quadrant 3
MainTerminal 2 -

V

TM

+ Current

I

H

V

I

H

off state

TM

Quadrant 1
MainTerminal 2 +

+ Voltage

I

at V

DRM

DRM

(+) I

GATE

(+) I

GATE

(+) MT2

GT

MT1

REF

(-) MT2

GT

MT1

REF

(+) MT2

Quadrant II Quadrant I

(-) I

GT

GATE

MT1

REF

I

- + I

GT

(-) MT2

Quadrant III Quadrant IV

(-) I

GT

GATE

MT1

REF

-

MT2 NEGATIVE

(Negative Half Cycle)

All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.

GT

http://onsemi.com

3

MAC12SM, MAC12SN

100

10

Q3

Q1

1

, GATE TRIGGER CURRENT (mA)

GT

I

0.1

- 40 - 10 20 50 80 110

- 25 5 35 65 95

Q2

TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current

versus Junction T emperature

100

10

Q2

Q1

0.90
Q1

0.85

0.80

Q3

0.75
Q2

0.70

0.65

0.60

0.55

0.50

, GATE TRIGGER VOLTAGE (VOLTS)

GT

0.45

V

0.40

- 40 - 10 20 50 80 110- 25 5 35 65 95
TJ, JUNCTION TEMPERATURE (°C)

Figure 2. Typical Gate Trigger Voltage

versus Junction T emperature

100

10

Q3

1

, LATCHING CURRENT (mA)

L

I

0.1

- 40 - 10 20 50 80 110- 25 5 35 65 95 - 40 - 10 20 50 80 110- 25 5 35 65 95
TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Latching Current

versus Junction T emperature

110

100

30°, 60°

90

90°

80

70

, CASE TEMPERATURE ( C)°

C

T

I

, RMS ON-STATE CURRENT (AMPS)

T(RMS)

180°

DC

86420

1210

Figure 5. Typical RMS Current Derating

1

, HOLDING CURRENT (mA)

H

I

0.1

25

20

15

10

, AVERAGE POWER DISSIPATION (WATTS)

(AV)

P

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Typical Holding Current

versus Junction T emperature

60°

5

060

I

, AVERAGE ON-STATE CURRENT (AMPS)

T(AV)

Figure 6. On-State Power Dissipation

MT2 Positive

MT2 Negative

180°

120°

90°

DC

30°

104

128620

http://onsemi.com

4

MAC12SM, MAC12SN

100

10

1

, INSTANTANEOUS ON-STATE CURRENT (AMPS)

T

I

0.1

0.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Typical @ TJ = 25°C

Maximum @ TJ = 110°C

Maximum @ TJ = 25°C

1.5 2.5 3.5 4.5

Figure 7. Typical On-State Characteristics

1

0.1

(NORMALIZED)

0.01

r(t), TRANSIENT THERMAL RESISTANCE

1000010001001010.1

t, TIME (ms)

Figure 8. T ypical Thermal Response

http://onsemi.com

5

MAC12SM, MAC12SN

PACKAGE DIMENSIONS

TO-220AB

CASE 221A-09

ISSUE AA

SEATING

-T-

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: [phone] or 800-344-3860 Toll Free USA/Canada
Fax: [phone] or 800-344-3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800-282-9855 Toll Free USA/Canada

http://onsemi.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051

Phone: [phone]

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local
Sales Representative.

MAC12SM/D

6