ON Semiconductor MAC12SM, MAC12SN Technical data
查询MAC12供应商
MAC12SM, MAC12SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
• Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
• Blocking Voltage to 800 Volts
• On-State Current Rating of 12 Amperes RMS at 70°C
• High Surge Current Capability - 90 Amperes
• Rugged, Economical TO220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Maximum Values of I
• High Commutating di/dt - 8.0 A/ms Minimum at 110°C
• Immunity to dV/dt - 15 V/sec Minimum at 110°C
• Operational in Three Quadrants: Q1, Q2, and Q3
• Device Marking: Logo, Device Type, e.g., MAC12SM, Date Code
, VGT and IH Specified for Ease of Design
GT
http://onsemi.com
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
4
MT1
G
MARKING
DIAGRAM
MAXIMUM RATINGS (T
Peak Repetitive Off-State Voltage (Note 1)
(T
= -40 to 110°C, Sine Wave,
J
50 to 60 Hz, Gate Open)
On-State RMS Current
(All Conduction Angles; T
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
= 110°C)
J
Circuit Fusing Consideration
(t = 8.33 ms)
Peak Gate Power
(Pulse Width = 1.0 sec, T
Average Gate Power
(t = 8.3 msec, T
Operating Junction Temperature Range T
Storage Temperature Range T
1. (V
and V
DRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
RRM
= 25°C unless otherwise noted)
J
Rating
MAC12SM
MAC12SN
= 70°C)
C
= 70°C)
C
= 70°C)
C
for all types can be applied on a continuous basis. Blocking
Symbol Value Unit
V
DRM,
V
RRM
600
800
I
T(RMS)
I
TSM
I2t 33 A2sec
P
GM
P
G(AV)
J
stg
12 A
90 A
16 W
0.35 W
- 40 to
110
- 40 to
150
°C
°C
MAC12xx
ALYWW
V
1
2
3
TO-220AB
CASE 221A
Style 4
xx = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
PIN ASSIGNMENT
1
2
3 Gate
4
Main Terminal 1
Main Terminal 2
Main Terminal 2
ORDERING INFORMATION
Device Package Shipping
MAC12SM TO220AB 50 Units/Rail
Semiconductor Components Industries, LLC, 2003
April, 2003 - Rev. 2
MAC12SN TO220AB
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
50 Units/Rail
MAC12SM/D
MAC12SM, MAC12SN
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
R
JC
R
JA
L
2.2
°C/W
62.5
260 °C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
= Rated V
D
DRM
, V
; Gate Open) TJ = 25°C
RRM
ON CHARACTERISTICS
Peak On-State Voltage
(1)
(ITM = ±17 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
Holding Current
(V
= 12 V, Gate Open, Initiating Current = ±200 mA)
D
Latching Current (VD = 12 V, IG = 5 mA)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(V
= 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/s, Gate Open,
D
= 110°C, f = 500 Hz, Snubber: Cs = 0.01 f, Rs = 15 )
T
J
Critical Rate of Rise of Off-State Voltage
(V
= 67% V
D
= 110°C)
T
J
, Exponential Waveform, RGK = 1 K,
DRM
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 sec; diG/dt = 1 A/sec; Igt = 100 mA;
f = 60 Hz
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
= 110°C
T
J
Symbol Min Typ Max Unit
I
DRM
I
RRM
V
TM
I
GT
I
H
I
L
V
GT
(di/dt)
,
-
-
-
-
0.01
2.0
- - 1.85 V
-
-
-
1.5
2.5
2.7
5.0
5.0
5.0
- 2.5 10 mA
-
-
-
0.45
0.45
0.45
c
8.0 10 - A/ms
3.0
5.0
3.0
0.68
0.62
0.67
15
20
15
1.5
1.5
1.5
mA
mA
mA
V
dV/dt 15 40 - V/s
di/dt - - 10 A/s
http://onsemi.com
2
Loading...