ON Semiconductor MAC12HCD, MAC12HCM, MAC12HCN Technical data
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MAC12HCD, MAC12HCM,
MAC12HCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full–wave,
silicon gate–controlled devices are needed.
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
• High Commutating di/dt and High Immunity to dv/dt @ 125°C
• Minimizes Snubber Networks for Protection
• Blocking Voltage to 800 Volts
• On-State Current Rating of 12 Amperes RMS at 80°C
• High Surge Current Capability – 100 Amperes
• Industry Standard TO-220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity
• Device Marking: Logo, Device T ype, e.g., MAC12HCD, Date Code
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TRIACS
12 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
On-State RMS Current
(All Conduction Angles; T
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
Circuit Fusing Consideration
(t = 8.33 ms)
Peak Gate Power
(Pulse Width ≤ 1.0 µs, T
Average Gate Power
(t = 8.3 ms, T
Operating Junction Temperature Range T
Storage Temperature Range T
(1) V
and V
DRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
= 80°C)
C
for all types can be applied on a continuous basis. Blocking
RRM
= 25°C unless otherwise noted)
J
(1)
MAC12HCD
MAC12HCM
MAC12HCN
= 80°C)
C
= 125°C)
J
= 80°C)
C
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I2t 41 A2sec
P
GM
P
G(AV)
J
stg
400
600
800
12 A
100 A
16 Watts
0.35 Watts
–40 to
+125
–40 to
+150
Volts
°C
°C
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
2
3 Gate
4
Main Terminal 1
Main Terminal 2
Main Terminal 2
ORDERING INFORMATION
Device Package Shipping
MAC12HCD TO220AB 50 Units/Rail
MAC12HCM TO220AB
MAC12HCN TO220AB
50 Units/Rail
50 Units/Rail
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MAC12HC/D
MAC12HCD, MAC12HCM, MAC12HCN
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance
— Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
R
θ
JC
R
θ
JA
L
2.2
62.5
260 °C
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
= Rated V
D
DRM
, V
, Gate Open) TJ = 25°C
RRM
ON CHARACTERISTICS
Peak On-State Voltage
(ITM = ±17 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Holding Current
(V
= 12 V, Gate Open, Initiating Current = ±150 mA)
D
Latch Current (VD = 12 V, IG = 50 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
(1)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
= 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, Gate Open, T
D
= 125°C, f = 250 Hz, CL = 10 µF, LL = 40 mH, with Snubber)
Critical Rate of Rise of Off-State Voltage
(V
= Rated V
D
Gate Open, T
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
, Exponential Waveform,
DRM
= 125°C)
J
T
= 125°C
J
I
,
DRM
I
RRM
V
TM
—
—
—
—
0.01
2.0
— — 1.85
I
GT
I
H
10
10
10
—
—
—
50
50
50
— — 60
I
L
V
GT
(di/dt)
J
c
—
—
—
0.5
0.5
0.5
—
—
—
—
—
—
60
80
60
1.5
1.5
1.5
15 — — A/ms
dv/dt 600 — — V/µs
di/dt — — 10 A/µs
mA
V
mA
mA
mA
V
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Symbol Parameter
V
I
DRM
V
I
RRM
V
I
H
DRM
RRM
TM
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
MAC12HCD, MAC12HCM, MAC12HCN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
on state
at V
I
RRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
RRM
Quadrant 3
MainTerminal 2 –
I
H
V
TM
V
I
H
off state
TM
Quadrant 1
MainTerminal 2 +
+ Voltage
I
at V
DRM
DRM
(+) MT2
Quadrant II Quadrant I
(–) I
GT
GATE
MT1
REF
I
– + I
GT
(–) MT2
Quadrant III Quadrant IV
(–) I
GT
GATE
MT1
REF
(+) I
GATE
(+) I
GATE
(+) MT2
GT
MT1
REF
(–) MT2
GT
MT1
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
GT
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