ON Semiconductor MAC12HCD, MAC12HCM, MAC12HCN Technical data

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MAC12HCD, MAC12HCM,
MAC12HCN

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full–wave,
silicon gate–controlled devices are needed.

• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3

• High Commutating di/dt and High Immunity to dv/dt @ 125°C

• Minimizes Snubber Networks for Protection

• Blocking Voltage to 800 Volts

• On-State Current Rating of 12 Amperes RMS at 80°C

• High Surge Current Capability – 100 Amperes

• Industry Standard TO-220AB Package for Ease of Design

• Glass Passivated Junctions for Reliability and Uniformity

• Device Marking: Logo, Device T ype, e.g., MAC12HCD, Date Code

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TRIACS

12 AMPERES RMS

400 thru 800 VOLTS

MT2

MT1

G

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Peak Repetitive Off-State Voltage

(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)

On-State RMS Current

(All Conduction Angles; T

Peak Non-Repetitive Surge Current

(One Full Cycle, 60 Hz, T

Circuit Fusing Consideration

(t = 8.33 ms)

Peak Gate Power

(Pulse Width ≤ 1.0 µs, T

Average Gate Power

(t = 8.3 ms, T

Operating Junction Temperature Range T

Storage Temperature Range T

(1) V

and V

DRM

voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

= 80°C)

C

for all types can be applied on a continuous basis. Blocking

RRM

= 25°C unless otherwise noted)

J

(1)

MAC12HCD
MAC12HCM
MAC12HCN

= 80°C)

C

= 125°C)

J

= 80°C)

C

V

DRM,

V

RRM

I

T(RMS)

I

TSM

I2t 41 A2sec

P

GM

P

G(AV)

J

stg

400
600
800

12 A

100 A

16 Watts

0.35 Watts

–40 to

+125

–40 to

+150

Volts

°C

°C

4

1

2

3

TO–220AB

CASE 221A

STYLE 4

PIN ASSIGNMENT

1
2
3 Gate
4

Main Terminal 1
Main Terminal 2

Main Terminal 2

ORDERING INFORMATION

Device Package Shipping

MAC12HCD TO220AB 50 Units/Rail
MAC12HCM TO220AB
MAC12HCN TO220AB

50 Units/Rail
50 Units/Rail

 Semiconductor Components Industries, LLC, 2001

November, 2001 – Rev. 2

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

MAC12HC/D

MAC12HCD, MAC12HCM, MAC12HCN

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance

— Junction to Case
— Junction to Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

R

θ

JC

R

θ

JA
L

2.2

62.5
260 °C

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted; Electricals apply in both directions)

J

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(V

= Rated V

D

DRM

, V

, Gate Open) TJ = 25°C

RRM

ON CHARACTERISTICS

Peak On-State Voltage

(ITM = ±17 A)

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)

Holding Current

(V

= 12 V, Gate Open, Initiating Current = ±150 mA)

D

Latch Current (VD = 12 V, IG = 50 mA)

MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)

(1)

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

(V

= 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, Gate Open, T

D

= 125°C, f = 250 Hz, CL = 10 µF, LL = 40 mH, with Snubber)

Critical Rate of Rise of Off-State Voltage

(V

= Rated V

D

Gate Open, T

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz

(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

, Exponential Waveform,

DRM

= 125°C)

J

T

= 125°C

J

I

,

DRM

I

RRM

V

TM

—
—

—
—

0.01

2.0

— — 1.85

I

GT

I

H

10
10
10

—
—
—

50
50
50

— — 60

I

L

V

GT

(di/dt)

J

c

—
—
—

0.5

0.5

0.5

—
—
—

—
—
—

60
80
60

1.5

1.5

1.5

15 — — A/ms

dv/dt 600 — — V/µs

di/dt — — 10 A/µs

mA

V

mA

mA

mA

V

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2

Symbol Parameter

V
I

DRM

V
I

RRM

V
I

H

DRM

RRM

TM

Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current

Maximum On State Voltage
Holding Current

MAC12HCD, MAC12HCM, MAC12HCN

Voltage Current Characteristic of Triacs

(Bidirectional Device)

+ Current

on state

at V

I

RRM

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

+

RRM

Quadrant 3
MainTerminal 2 –

I

H

V

TM

V

I

H

off state

TM

Quadrant 1
MainTerminal 2 +

+ Voltage

I

at V

DRM

DRM

(+) MT2

Quadrant II Quadrant I

(–) I

GT

GATE

MT1

REF

I

– + I

GT

(–) MT2

Quadrant III Quadrant IV

(–) I

GT

GATE

MT1

REF

(+) I

GATE

(+) I

GATE

(+) MT2

GT

MT1

REF

(–) MT2

GT

MT1

REF

–

MT2 NEGATIVE

(Negative Half Cycle)

All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.

GT

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3

MAC12HCD, MAC12HCM, MAC12HCN

100

Q3

Q2

Q1

10

, GATE TRIGGER CURRENT (mA)

GT

I

1

-40 -10 20 50 80 110 125

-25 5 35 65 95
T

, JUNCTION TEMPERATURE (°C)

J

Figure 1. Typical Gate Trigger Current

versus Junction T emperature

100

MT2 NEGATIVE

MT2 POSITIVE

10

1.20

1.10

1.00

0.90

0.80

0.70

0.60

, GATE TRIGGER VOLTAGE (VOLT)

GT

0.50

V

0.40

Q3

Q1

Q2

-40 -10 20 50 80 110 125-25 5 35 65 95
T

, JUNCTION TEMPERATURE (°C)

J

Figure 2. Typical Gate Trigger Voltage

versus Junction T emperature

100

Q2
Q3

Q1

10

HOLDING CURRENT (mA)

1

-40 -10 20 50 80 110 125-25 5 35 65 95 -40 -10 20 50 80 110 125-25 5 35 65 95
T

, JUNCTION TEMPERATURE (°C)

J

Figure 3. Typical Holding Current

versus Junction T emperature

125

110

95

, CASE TEMPERATURE ( C)°

80

C

T

65

I

, RMS ONSTATE CURRENT (AMP)

T(RMS)

120°, 90°, 60°, 30°

180°

DC

121086420

Figure 5. Typical RMS Current Derating

LATCHING CURRENT (mA)

, AVERAGE POWER DISSIPATION (WATTS)

(AV)

P

1

T

, JUNCTION TEMPERATURE (°C)

J

Figure 4. Typical Latching Current

versus Junction T emperature

20

18

16

14

12

10

8

6

4

2

0

I

, AVERAGE ONSTATE CURRENT (AMP)

T(AV)

Figure 6. On-State Power Dissipation

DC

180°

120°

90°

60°

30°

121086420

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4

MAC12HCD, MAC12HCM, MAC12HCN

100

10

1

, INSTANTANEOUS ONSTATE CURRENT (AMP)

T

I

0.1

TYPICAL @
T

= 25°C

J

MAXIMUM @ T

0

0.5 1 1.5 2 2.5 3 3.5 5
VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)

MAXIMUM @ T

= 25°C

J

J

4 4.5

Figure 7. Typical On-State Characteristics

= 125°C

1

0.1

(NORMALIZED)

r(t), TRANSIENT THERMAL RESISTANCE

0.01

1000010001001010.1

t, TIME (ms)

Figure 8. T ypical Thermal Response

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5

MAC12HCD, MAC12HCM, MAC12HCN

PACKAGE DIMENSIONS

TO–220

CASE 221A–09

ISSUE AA

SEATING

–T–

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

MILLIMETERSINCHES

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6

Notes

MAC12HCD, MAC12HCM, MAC12HCN

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7

MAC12HCD, MAC12HCM, MAC12HCN

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MAC12HC/D

8