ON Semiconductor MAC08BT1, MAC08MT1 Technical data

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MAC08BT1, MAC08MT1

Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.

• Sensitive Gate Trigger Current in Four Trigger Modes

• Blocking Voltage to 600 Volts

• Glass Passivated Surface for Reliability and Uniformity

• Surface Mount Package

• Device Marking: MAC08BT1: AC08B; MAC08MT1: A08M, and

Date Code

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TRIAC

0.8 AMPERE RMS

200 thru 600 VOLTS

MAXIMUM RATINGS (T

Rating

Peak Repetitive Off–State V oltage

(Sine Wave, 50 to 60 Hz, Gate Open,

and V

110°C)

RRM

TJ = 25 to

On–State Current RMS (TC = 80°C)

(Full Sine Wave 50 to 60 Hz)

Peak Non–repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)

Circuit Fusing Considerations

(Pulse Width = 8.3 ms)

Peak Gate Power

(TC = 80°C, Pulse Width v 1.0 µs)

Average Gate Power

(TC = 80°C, t = 8.3 ms)

Operating Junction Temperature Range T

Storage Temperature Range T

(1) V

DRM

voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

= 25°C unless otherwise noted)

J

Symbol Value Unit

(1)

MAC08BT1
MAC08MT1

for all types can be applied on a continuous basis. Blocking

V

DRM,

V

RRM

200
600

I

T(RMS)

I

TSM

I2t 0.4 A2s

P

GM

P

G(AV)

J

stg

0.8 Amps

8.0 Amps

5.0 Watts

0.1 Watt

–40 to

+110

–40 to

+150

Volts

°C

°C

MT2

1

2

3

SOT–223

CASE 318E

STYLE 11

MT1

G

4

PIN ASSIGNMENT

1
2
3 Gate
4

Main Terminal 1
Main Terminal 2

Main Terminal 2

ORDERING INFORMATION

Device Package Shipping

MAC08BT1 SOT223 16mm Tape and Reel

MAC08MT1 SOT223

(1K/Reel)

16mm Tape and Reel

(1K/Reel)

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 3

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

MAC08BT1/D

MAC08BT1, MAC08MT1

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

PCB Mounted per Figure 1

Thermal Resistance, Junction to Tab

Measured on MT2 Tab Adjacent to Epoxy

Maximum Device T emperature for Soldering Purposes

(for 10 Seconds Maximum)

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated V

DRM

, V

; Gate Open) TJ = 25°C

RRM

ON CHARACTERISTICS

Peak On–State Voltage

(IT = "1.1 A Peak)

Gate Trigger Current (Continuous dc) All Quadrants

(VD = 12 Vdc, RL = 100 Ω)

Holding Current (Continuous dc)

(VD = 12 Vdc, Gate Open, Initiating Current = "20 mA)

Gate Trigger V oltage (Continuous dc) All Quadrants

(VD = 12 Vdc, RL = 100 Ω)

(1)

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage

(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS
On–State Current Duration = 2.0 mS, V
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150 Ω, See Figure 10)

Critical Rate–of–Rise of Off State Voltage

(Vpk = Rated V

(1) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

, TC= 110°C, Gate Open, Exponential Method)

DRM

= 25°C unless otherwise noted; Electricals apply in both directions)

C

= 200 V,

DRM

TJ = 110°C

R

θJA

R

θJT

T

L

Symbol Min Typ Max Unit

I

,

DRM

I

RRM

V

TM

I

GT

I

H

V

GT

(dv/dt)

c

dv/dt 10 — — V/µs

—
—

— — 1.9 Volts

— — 10 mA

— — 5.0 mA

— — 2.0 Volts

1.5 — — V/µs

156 °C/W

25 °C/W

260 °C

—
—

10

200

µA
µA

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2

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current

Maximum On State Voltage
Holding Current

MAC08BT1, MAC08MT1

Voltage Current Characteristic of Triacs

(Bidirectional Device)

on state

I

at V

RRM

Quadrant Definitions for a Triac

RRM

Quadrant 3
MainTerminal 2 –

V

TM

+ Current

I

H

V

I

H

off state

TM

Quadrant 1
MainTerminal 2 +

I

at V

DRM

DRM

+ Voltage

MT2 POSITIVE

(Positive Half Cycle)

(+) MT2

Quadrant II Quadrant I

IGT – + I

Quadrant III Quadrant IV

(–) I

GATE

(–) I

GATE

GT

MT1

REF

(–) MT2

GT

MT1

REF

(Negative Half Cycle)

+

–

MT2 NEGATIVE

(+) I

GATE

(+) I

GATE

(+) MT2

GT

MT1

REF

GT

(–) MT2

GT

MT1

REF

All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.

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3

0.984

25.0

0.079

2.0

0.079

2.0

0.059

1.5

0.091

2.3

MAC08BT1, MAC08MT1

0.15

3.8

0.091

0.059

1.5

0.244

0.059

1.5

6.2

inches

mm

BOARD MOUNTED VERTICALL Y IN CINCH 8840 EDGE CONNECT OR.

2.3

BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.

MATERIAL: G10 FIBERGLASS BASE EPOXY

0.096

2.44

0.059

1.5

0.096

2.44

0.472

12.0

0.096

2.44

0.059

1.5

Figure 1. PCB for Thermal Impedance and

Power Testing of SOT-223

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4

MAC08BT1, MAC08MT1

10

1.0

0.1
TYPICAL AT TJ = 110°C

MAX AT TJ = 110°C
MAX AT TJ = 25°C

0.01

, INSTANTANEOUS ON-STATE CURRENT (AMPS)

T

I

1.00 4.0 6.0 8.0 10

vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal

110

100

90

30°

60°

80
70
60

dc

α = 180°

120°

50

MINIMUM FOOTPRINT

40

50 OR 60 Hz

30

, MAXIMUM ALLOWABLEAMBIENT TEMPERATURE ( C)°

20

A

T

I

, RMS ON-STATE CURRENT (AMPS)

T(RMS)

0.30.20.10

Figure 4. Current Derating, Minimum Pad Size

Reference: Ambient T emperature

α = CONDUCTION

90°

0.4

α

ANGLE

160
150
140
130
120
110
100

90

TYPICAL
MAXIMUM

DEVICE MOUNTED ON
FIGURE 1 AREA = L

PCB WITH TAB AREA

2

AS SHOWN

1

L

L

4

23
80
70

RESISTANCE, C/W°

60

5.04.03.02.0

, JUNCTION TO AMBIENT THERMAL

θJA

R

MINIMUM

50

FOOTPRINT = 0.076 cm

40
30

2

2.00
FOIL AREA (cm2)

Resistance versus Copper T ab Area

110

α

0.5

, MAXIMUM ALLOWABLE

A

T

100

90
80
70
60
50
40

AMBIENT TEMPERATURE ( C)°

30
20

α = 180°

1.0 cm2 FOIL AREA
50 OR 60 Hz

I

T(RMS)

30°

60°

90°

dc

120°

α

α

α = CONDUCTION

ANGLE

, RMS ON-STATE CURRENT (AMPS)

0.70.60.50.40.30.20.10

Figure 5. Current Derating, 1.0 cm Square Pad

Reference: Ambient T emperature

110

100

30°

60°

90

80

dc

α = 180°

120°

70

4.0 cm2 FOIL AREA

60

, MAXIMUM ALLOWABLEAMBIENT TEMPERATURE ( C)°

50

A

T

I

, RMS ON-STATE CURRENT (AMPS)

T(RMS)

0.50.40.30.20.10

Figure 6. Current Derating, 2.0 cm Square Pad

Reference: Ambient T emperature

α

α = CONDUCTION

90°

ANGLE

0.6 0.7 0.8

α

105

100

95

110

90

, MAXIMUM ALLOWABLE

TAB TEMPERATURE ( C)°

(tab)

T

85

80

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5

dc

REFERENCE:
FIGURE 1

30°

60°

α = 180°

120°

α

α

α = CONDUCTION

ANGLE

0.50.40.30.20.10 0.6 0.7 0.8

I

, ON-STATE CURRENT (AMPS)

T(RMS)

Figure 7. Current Derating

Reference: MT2 T ab

90°

MAC08BT1, MAC08MT1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

, MAXIMUM AVERAGE

0.3

(AV)

P

0.2

POWER DISSIPATION (WATTS)

0.1
0

α = 180°

dc

I

T(RMS)

200 V

ADJUST FOR

ITM, 60 Hz V

CHARGE

α

α

α = CONDUCTION

ANGLE

120°

90°

0.50.40.30.20.10 0.6 0.7 0.8

, RMS ON-STATE CURRENT (AMPS)

Figure 8. Power Dissipation

RMS

AC

TRIGGER

CHARGE

CONTROL

NON-POLAR

1.0

30°

60°

0.1

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.01

0.0010.0001

0.01 0.1 10 100
t, TIME (SECONDS)

1.0

Figure 9. Thermal Response, Device

Mounted on Figure 1 Printed Circuit Board

L

L

MEASURE

I

1N914

51

W

C

L

TRIGGER CONTROL

MT2

R

S

C

S

MT1

G

1N4007

ADJUST FOR
dv/dt

(c)

–

200 V

+

Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)

10

80°

µ

I

c

dv/dt , (V/ S)

COMMUTATING dv/dt

1.0

1.0

TM

t

w

V

DRM

di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)

110°

100°

1

f =

2 t

w

(dińdt)c+

6f I

1000

TM

Figure 11. Typical Commutating dv/dt versus

Current Crossing Rate and Junction Temperature

60°

c

10

400 Hz

300 Hz

µ

c

V

= 200 V

DRM

dv/dt , (V/ S)

COMMUTATING dv/dt

10

1.0
90807060 100 110

TJ, JUNCTION TEMPERATURE (°C)

60 Hz

180 Hz

Figure 12. T ypical Commutating dv/dt versus

Junction T emperature at 0.8 Amps RMS

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6

MAC08BT1, MAC08MT1

60

50

µ

40

STATIC dv/dt (V/ s)

30

MAIN TERMINAL #1

POSITIVE

20

10 10,000

RG, GATE – MAIN TERMINAL 1 RESISTANCE (OHMS)

MAIN TERMINAL #2

POSITIVE

1000100

600 V
TJ = 110°C

Figure 13. Exponential Static dv/dt versus

Gate – Main T erminal 1 Resistance

6.0

5.0

HOLDING CURRENT (mA)

H

I ,

4.0

3.0

2.0

1.0

0
–40

0 20 100–20 40 60 80

TJ, JUNCTION TEMPERATURE (°C)

MAIN TERMINAL #2

POSITIVE

MAIN TERMINAL #1

POSITIVE

pk

10

1.0

, GATE TRIGGER CURRENT (mA)

GT

I

0.1

I

GT3

I

GT2

I

GT1

–20 40 60 80

0– 40 20 100

TJ, JUNCTION TEMPERATURE (°C)

I

GT4

Figure 14. Typical Gate Trigger Current Variation

1.1

V

GT3

V

GT4

V

V , GATE TRIGGER VOLTAGE (VOLTS)

0.3

GT

–40

GT2

0 20 100–20 406080

TJ, JUNCTION TEMPERATURE (°C)

V

GT1

Figure 15. Typical Holding Current Variation

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Figure 16. Gate Trigger Voltage Variation

7

MAC08BT1, MAC08MT1

INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection

0.079

2.0

0.091

2.3

0.079

2.0

0.059

1.5

SOT-223

SOT-223 POWER DISSIPATION

The power dissipation of the SOT -223 is a function of the
MT2 pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T
temperature of the die, R

, the maximum rated junction

J(max)

, the thermal resistance from

θJA

the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT-223 package, PD can be calculated as
follows:

PD =

T

J(max)

R

θJA

– T

A

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 550 milliwatts.

110°C – 25°C

PD =

156°C/W

= 550 milliwatts

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.15

3.8

0.248

6.3

inches

mm

0.059

1.5

0.091

2.3

0.059

1.5

The 156°C/W for the SOT-223 package assumes the use

of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 550
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT-223 package. One is to
increase the area of the MT2 pad. By increasing the area of
the MT2 pad, the power dissipation can be increased.
Although one can almost double the power dissipation with
this method, one will be giving up area on the printed
circuit board which can defeat the purpose of using surface
mount technology . A graph of R

versus MT2 pad area is

θJA

shown in Figure 3.

Another alternative would be to use a ceramic substrate

or an aluminum core board such as Thermal Clad. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass

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or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT-223 package should
be the same as the pad size on the printed circuit board, i.e.,
a 1:1 registration.

8

MAC08BT1, MAC08MT1

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 17 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.

• The soldering temperature and time should not exceed
260°C for more than 10 seconds.

• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.

• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied
during cooling.

* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.

The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.

200°C

150°C

100°C

50°C

STEP 1

PREHEAT

ZONE 1
“RAMP”

DESIRED CURVE FOR HIGH

TIME (3 TO 7 MINUTES TOTAL)

STEP 2

VENT

“SOAK”

MASS ASSEMBLIES

150°C

100°C

Figure 17. T ypical Solder Heating Profile

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

DESIRED CURVE FOR LOW

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

160°C

140°C

MASS ASSEMBLIES

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9

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

170°C

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

STEP 6

VENT

T

MAX

STEP 7

COOLING

205° TO

219°C
PEAK AT
SOLDER

JOINT

0.08 (0003)

S

L

H

A

F

4

123

G

MAC08BT1, MAC08MT1

P ACKAGE DIMENSIONS

SOT–223

CASE 318E–04

ISSUE J

B

D

J

C

M

K

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIMAMIN MAX MIN MAX

0.249 0.263 6.30 6.70

B 0.130 0.145 3.30 3.70
C 0.060 0.068 1.50 1.75
D 0.024 0.035 0.60 0.89
F 0.115 0.126 2.90 3.20

G 0.087 0.094 2.20 2.40

H 0.0008 0.0040 0.020 0.100
J 0.009 0.014 0.24 0.35
K 0.060 0.078 1.50 2.00
L 0.033 0.041 0.85 1.05

M 0 10 0 10

____

S 0.264 0.287 6.70 7.30

STYLE 11:

PIN 1. MT 1

2. MT 2

3. GATE

4. MT 2

MILLIMETERS

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10

Notes

MAC08BT1, MAC08MT1

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11

MAC08BT1, MAC08MT1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability ,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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MAC08BT1/D