ON Semiconductor LM285, LM385B Technical data

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LM285, LM385B

Micropower Voltage
Reference Diodes

The LM285/LM385 series are micropower two−terminal bandgap
voltage regulator diodes. Designed to operate over a wide current
range of 10 mA to 20 mA, these devices feature exceptionally low
dynamic impedance, low noise and stable operation over time and
temperature. Tight voltage tolerances are achieved by on−chip
trimming. The large dynamic operating range enables these devices to
be used in applications with widely varying supplies with excellent
regulation. Extremely low operating current make these devices ideal
for micropower circuitry like portable instrumentation, regulators and
other analog circuitry where extended battery life is required.

The LM285/LM385 series are packaged in a low cost TO−226
plastic case and are available in two voltage versions of 1.235 V and

2.500 V as denoted by the device suffix (see Ordering Information
table). The LM285 is specified over a −40°C to +85°C temperature
range while the LM385 is rated from 0°C to +70°C.

The LM385 is also available in a surface mount plastic package in
voltages of 1.235 V and 2.500 V.

Features

• Operating Current from 10 mA to 20 mA

• 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades

• Low Temperature Coefficient

• 1.0 W Dynamic Impedance

• Surface Mount Package Available

• Pb−Free Packages are Available

Cathode

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SOIC−8

8

1

N.C.

Cathode

Anode

xxx = 1.2 or 2.5
y = 2 or 3
z = 1 or 2
A = Assembly Location
L = Wafer Lot
Y = Year
W, WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

D SUFFIX
CASE 751

TO−92

(TO−226)

Z SUFFIX

CASE 29

MARKING

DIAGRAMS

8

y85−z
ALYW

G

1

LMy85

Z−xxx

AL YWWG

G

360 k
Open
for 1.235 V

600 k

for 2.5 V

600 k

Open

8.45 k

74.3 k

425 k

Figure 1. Representative Schematic Diagram

© Semiconductor Components Industries, LLC, 2005

November, 2005 − Rev. 7

600 k

Anode

10 k

(Bottom View)

132

N.C.
N.C.
N.C.

Anode

1

2

3

4

Standard Application

+

−

500 W

1.5 V

Battery

100 k

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

1 Publication Order Number:

8

7

6

5

3.3 k

1.235 V

LM385−1.2

Cathod
N.C.
N.C.
N.C.

LM285/D

LM285, LM385B

MAXIMUM RATINGS (T

= 25°C, unless otherwise noted)

A

Rating Symbol Value Unit

Reverse Current I
Forward Current I
Operating Ambient Temperature Range

LM285

LM385
Operating Junction Temperature T
Storage Temperature Range T
Electrostatic Discharge Sensitivity (ESD)

ESD
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)

R
F

T

A

J

stg

30 mA
10 mA

°C

−40 to +85
0 to +70

+150 °C

−65 to + 150 °C
V

4000

400

2000

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (T

= 25°C, unless otherwise noted)

A

LM285−1.2 LM385−1.2/LM385B−1.2

Characteristic Symbol

Reverse Breakdown Voltage (I

v IR v 20 mA)

Rmin

LM285−1.2/LM385B−1.2

TA = T

low

to T

high

(Note 1)

LM385−1.2

TA = T

low

to T

high

(Note 1)

Minimum Operating Current

TA = 25°C
TA = T

low

to T

high

(Note 1)

Reverse Breakdown Voltage Change with Current

I

v IR v 1.0 mA, TA = +25°C

Rmin

TA = T

low

to T

high

(Note 1)

1.0 mA v IR v 20 mA, TA = +25°C
TA = T

low

to T

high

(Note 1)

Reverse Dynamic Impedance

IR = 100 mA, TA = +25°C

Average Temperature Coefficient

10 mA v IR v 20 mA, TA = T

low

to T

high

(Note 1)

Wideband Noise (RMS)

IR = 100 mA, 10 Hz v f v 10 kHz

Long Term Stability

IR = 100 mA, TA = +25°C ± 0.1°C

Reverse Breakdown Voltage (I

v IR v 20 mA)

Rmin

LM285−2.5/LM385B−2.5

TA = T

low

to T

high

(Note 1)

LM385−2.5

TA = T

low

to T

high

(Note 1)

Minimum Operating Current

TA = 25°C

1. T

TA = T

low

T

high

T

low

T

high

to T

high

(Note 1)

low

= −40°C for LM285−1.2, LM285−2.5
= +85°C for LM285−1.2, LM285−2.5
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
=+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5

DV

DV

V

I

(BR)

V

I

(BR)R

Rmin

(BR)R

Z

n

S

(BR)R

Rmin

Min Typ Max Min Typ Max

1.223

1.200

1.235

−

−

−

8.0

−

−

−

−

−

1.247

−

1.270

−

−

1.223

1.210

−

1.205

−

1.192

10

−

−

−

−

−

20

1.0

1.5
10
20

−

−

−

−

−

− 0.6 − − 0.6 −

/DT

− 80 − − 80 −

− 60 − − 60 −

− 20 − − 20 −

2.462

2.415

−

−

−

−

2.5

13

2.538

−

2.585

−

−

−

20
30

2.462

2.436

−

2.425

−

2.400

−

−

1.235

−

1.235

−

8.0

−

−

−

−

−

2.5

−

2.5

−

13

−

Unit

V

1.247

1.260

1.260

1.273
mA

15
20

mV

1.0

1.5
20
25

W

ppm/°C

mV

ppm/kHR

V

2.538

2.564

2.575

2.600
mA

20
30

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LM285, LM385B

ELECTRICAL CHARACTERISTICS (T

A

Characteristic Symbol

Reverse Breakdown Voltage Change with Current

I

v IR v 1.0 mA, TA = +25°C

Rmin

T

= T

to T

A

low

1.0 mA v I
TA = T

low

(Note 2)

high

v 20 mA, TA = +25°C

R

to T

(Note 2)

high

Reverse Dynamic Impedance

IR = 100 mA, TA = +25°C

Average Temperature Coefficient

20 mA v IR v 20 mA, TA = T

low

to T

high

(Note 2)

Wideband Noise (RMS)

IR = 100 mA, 10 Hz v f v 10 kHz

Long Term Stability

IR = 100 mA, TA = +25°C ± 0.1°C

2. T

= −40°C for LM285−1.2, LM285−2.5

low

T

= +85°C for LM285−1.2, LM285−2.5

high

T

= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5

low

T

=+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5

high

= 25°C, unless otherwise noted)

Min Typ Max Min Typ Max

DV

(BR)R

−

−

−

−

Z

− 0.6 − − 0.6 −

DV

/DT

(BR)

− 80 − − 80 −

n

− 120 − − 120 −

S

− 20 − − 20 −

LM285−1.2 LM385−1.2/LM385B−1.2

−

−

−

−

1.0

1.5
10

20

−

−

−

−

−

−

−

−

2.0

2.5
20

25

Unit

mV

W

ppm/°C

mV

ppm/kHR

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