ON Semiconductor LC898229XI User Manual

LC898229XI

AF Control LSI

Overview

This LSI is Closed−Auto Focus control LSI equipped with hall
sensor. It consists of 1 system of feedback circuit and constant current
driver. It has also a built−in EEPROM and temperature sensor.

Features

• Built−in Equalizer Circuit Using Digital Operation

♦ AF Control Equalizer Circuit
♦ Any Coefficient can be Specified by 2−wire Serial I/F (TWIF)

• 2−wire Serial Interface (The communication protocol is compatible

with I2C)

• Built−in A/D Converter

• Built−in D/A Converter

♦ Hall Offset
♦ Constant Current Bias

• Built−in Hall Sensor

♦ Si Hall Sensor

• Built−in EEPROM

♦ 64byte (16byte/page)

• Built−in OSC

• Built−in Constant Current Driver

♦ 110 mA

• Package

♦ WL−CSP 6−pin (2 x 3pin) , Thickness Max 0.29 mm, with

Backside Coat

♦ Lead−free, Halogen−free

• Supply voltage

♦ V

(2.6 V to 3.3 V)

DD

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WLCSP

6 BUMP

CASE 567UK

DEVICE MARKING INFORMATION

8229

YMZZ

8229= Specific Device Code
Y = Year
M = Month
ZZ = Assembly Lot

PIN LAYOUT

AB

VDD VSS

3

SDA SCL

2

OUT1 OUT2

1

© Semiconductor Components Industries, LLC, 2017

January , 2018 − Rev. 0

(Top View)

Number of PINsCircuit Name

2Driver
2Power
2Logic

ORDERING INFORMATION

Device Package Shipping

LC898229XI WLCSP6 4000 / Tape &

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

1 Publication Order Number:

LC898229XI/D

†

Reel

Pin Description

Type

I Input
O Output
B Bidirection
P Power supply, GND

NC Not Connected

2−wire Serial Interface

SCL I 2−wire serial interface clock pin
SDA B 2−wire serial interface data pin

Driver Interface

OUT1 O Driver output (to Actuator)
OUT2 O Driver output (to Actuator)

Power Supply Pin

V

DD

V

SS

P Power supply
P GND

LC898229XI

*Process when Pins are Not Used

PIN TYPE “O” – Ensure that it is set to OPEN.
PIN TYPE “I” – OPEN is inhibited. Ensure that it is

connected to the VDD or VSS even when it is unused.

(Please contact ON Semiconductor for more information

about selection of VDD or VSS.)
PIN TYPE “B” – If you are unsure about processing method

on the pin description of pin layout table, please contact us.

Note that incorrect processing of unused pins may result

in defects.

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LC898229XI

Table 1. ABSOLUTE MAXIMUM RATING (VSS = 0 V)

Item

Supply voltage VDD33 max Ta ≤ 25°C

Input/output voltage VI33, VO33 Ta ≤ 25°C

Storage ambient temperature Tstg

Operating ambient temperature Topr

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

Table 2. ACCEPTABLE OPERATION RANGE at Ta = −30 ~ 70°C, VSS = 0 V

Item Symbol Min Typ Max Unit

Supply voltage VDD33 2.6 2.8 3.3 V

Input voltage range V

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

Table 3. DC CHARACTERISTICS: Input/output level at VSS = 0 V, VDD = 2.6 V ~ 3.3V, Ta = −30 ~ 70°C

Item Symbol Condition Min Typ Max Unit Applicable Pins

High−level input voltage V

Low−level input voltage V

Low−level output voltage V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

IH
IL

OL

CMOS compliant

IOL= 2mA

Symbol Condition Rating Unit

−0.3～4.6

−0.3～VDD33+0.3

−55～125

−30～70

IN

Schmidt

0 VDD33 V

1.4 V

0.4 V

0.2

V SDA

V
V

°C
°C

SCL, SDA

Table 4. DRIVER OUTPUT (OUT1, OUT2) at VSS = 0 V, VDD = 2.8 V, Ta = 25°C

Item Symbol Condition Min Typ Max Unit Applicable Pins

Maximum current I

full

105 110 115 mA OUT1, OUT2

Table 5. NON−VOLATILE MEMORY CHARACTERISTICS

Item Symbol Condition Min Typ Max Unit Applicable Circuit

Endurance EN 1000 Cycles

Data retention RT 10 Years

Write time t

WT

EEPROM

20 ms

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